Search Results - "Seungwoo Jung"
-
1
Privacy-Oriented Technique for COVID-19 Contact Tracing (PROTECT) Using Homomorphic Encryption: Design and Development Study
Published in Journal of medical Internet research (12-07-2021)“…Background Various techniques are used to support contact tracing, which has been shown to be highly effective against the COVID-19 pandemic. To apply the…”
Get full text
Journal Article -
2
Electrospinning and Partial Etching Behaviors of Core-Shell Nanofibers Directly Electrospun on Mesh Substrates for Application in a Cover-Free Compact Air Filter
Published in Nanomaterials (Basel, Switzerland) (05-07-2024)“…The exposure of workers to propylene glycol monomethyl ether acetate (PGMEA) in manufacturing environments can result in potential health risks. Therefore,…”
Get full text
Journal Article -
3
Performance analysis of SiGe-HBT-based transimpedance amplifiers with nonconstant gain-bandwidth technique
Published in Analog integrated circuits and signal processing (01-09-2020)“…The performance of a transimpedance amplifier (TIA) can be enhanced by lowering the input impedance and applying the nonconstant gain-bandwidth product (GBP)…”
Get full text
Journal Article -
4
Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits
Published in Sensors (Basel, Switzerland) (01-05-2020)“…It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve…”
Get full text
Journal Article -
5
Balloon dilation of congenital supravalvular pulmonic stenosis in a dog
Published in Journal of veterinary science (Suwŏn-si, Korea) (01-03-2017)“…Percutaneous balloon valvuloplasty is considered the standard of care for treatment of valvular pulmonic stenosis, a common congenital defect in dogs…”
Get full text
Journal Article -
6
Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs
Published in IEEE transactions on nuclear science (01-12-2014)“…A SiGe RF low-noise amplifier (LNA) with built-in tolerance to single-event transients is proposed. The LNA utilizes an inverse-mode SiGe HBT for the…”
Get full text
Journal Article -
7
An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier
Published in IEEE transactions on nuclear science (01-02-2016)“…The single-event transient (SET) response of a SiGe-based, L-band low-noise amplifier (LNA) is investigated, with a focus on providing recommendations for…”
Get full text
Journal Article -
8
The Use of Inverse-Mode SiGe HBTs as Active Gain Stages in Low-Noise Amplifiers for the Mitigation of Single-Event Transients
Published in IEEE transactions on nuclear science (01-01-2017)“…A cascode configuration with inverse-mode (IM) common-emitter silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) is proposed for the mitigation…”
Get full text
Journal Article -
9
An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers
Published in IEEE transactions on nuclear science (01-04-2016)“…The capability of inverse-mode (IM) silicon- germanium (SiGe) heterojunction bipolar transistors (HBTs) for the mitigation of single-event transients (SETs)…”
Get full text
Journal Article -
10
A SiGe 8-18-GHz Receiver With Built-In-Testing Capability for Self-Healing Applications
Published in IEEE transactions on microwave theory and techniques (01-10-2014)“…A wideband (8-18 GHz) built-in test receiver in silicon-germanium technology is presented. The receiver chain consists of a low-noise amplifier (LNA), an…”
Get full text
Journal Article -
11
Optimization of SiGe HBT RF Switches for Single-Event Transient Mitigation
Published in IEEE transactions on nuclear science (01-12-2015)“…Single-event transient (SET)-hardened SiGe HBT RF single-pole single-throw (SPST) switches were designed and fabricated for the first time. TCAD-based…”
Get full text
Journal Article -
12
The Role of Negative Feedback Effects on Single-Event Transients in SiGe HBT Analog Circuits
Published in IEEE transactions on nuclear science (01-12-2015)“…The effects of negative feedback, both external and internal, on single event transients (SETs) in SiGe HBT analog circuits are investigated. In order to…”
Get full text
Journal Article -
13
On the Transient Response of a Complementary (npn + pnp) SiGe HBT BiCMOS Technology
Published in IEEE transactions on nuclear science (01-12-2014)“…The single-event transient (SET) response of a third-generation bulk C-SiGe ( npn + pnp) BiCMOS platform is investigated for the first time. Pulsed-laser,…”
Get full text
Journal Article -
14
High Seebeck Coefficient in Solution-Grown PbS Films
Published in Journal of electronic materials (01-02-2014)“…We have investigated the Seebeck coefficient of solution-grown lead sulfide (PbS) films at room temperature. A high Seebeck coefficient of 450 μ V/K was…”
Get full text
Journal Article -
15
Accurate Modeling of Single-Event Transients in a SiGe Voltage Reference Circuit
Published in IEEE transactions on nuclear science (01-06-2011)“…Single-event transients (SETs) are modeled in a SiGe voltage reference using compact model and full 3-D mixed-mode TCAD simulations. The effect of bias…”
Get full text
Journal Article -
16
A 34-110 GHz wideband, asymmetric, broadside-coupled Marchand balun in 180 nm SiGe BiCMOS technology
Published in 2014 IEEE MTT-S International Microwave Symposium (IMS2014) (01-06-2014)“…An asymmetric, broadside-coupled Marchand balun for wideband millimeter wave applications is presented. The balun based on the modified off-center frequency…”
Get full text
Conference Proceeding -
17
Systematic methodology for applying Mason's signal flow graph to analysis of feedback circuits
Published in 2014 IEEE International Symposium on Circuits and Systems (ISCAS) (01-06-2014)“…This paper introduces a systematic methodology for applying Mason's signal flow graph to the analysis of feedback circuits. We demonstrate that the…”
Get full text
Conference Proceeding -
18
A design methodology to achieve low input impedance and non-constant gain-bandwidth product in TIAs for optical communication
Published in 2013 IEEE International Symposium on Circuits and Systems (ISCAS) (01-05-2013)“…This paper demonstrates a method to achieve low input impedance and a non-constant gain-bandwidth product using SiGe NPN and PNP devices in order to attain a…”
Get full text
Conference Proceeding -
19
A complementary SiGe HBT on SOI low dropout voltage regulator utilizing a nulling resistor
Published in 2014 IEEE International Symposium on Circuits and Systems (ISCAS) (01-06-2014)“…The present work focuses on reducing dropout voltage and noise by exploiting the unique advantages of a complementary silicon-germanium (SiGe) heterojunction…”
Get full text
Conference Proceeding -
20
What Is Your Diagnosis?
Published in Journal of the American Veterinary Medical Association (01-01-2017)Get full text
Journal Article