Search Results - "Serron, Jill"

Correlated Intrinsic Electrical and Chemical Properties of Epitaxial WS2 via Combined C‐AFM and ToF‐SIMS Characterization by Spampinato, Valentina, Shi, Yuanyuan, Serron, Jill, Minj, Albert, Groven, Benjamin, Hantschel, Thomas, Heide, Paul, Franquet, Alexis

“…Atomically thin, 2D semiconductors, such as transition metal dichalcogenides, complement silicon in ultra‐scaled nano‐electronic devices. However, the…”
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Mitigating Dark Current for High-Performance Near-Infrared Organic Photodiodes via Charge Blocking and Defect Passivation by Yang, Weitao, Qiu, Weiming, Georgitzikis, Epimitheas, Simoen, Eddy, Serron, Jill, Lee, Jiwon, Lieberman, Itai, Cheyns, David, Malinowski, Pawel, Genoe, Jan, Chen, Hongzheng, Heremans, Paul

“…Thin-film organic near-infrared (NIR) photodiodes can be essential building blocks in the rapidly emerging fields including the internet of things and wearable…”
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Surface Contamination: A Natural Way toward High-Resolution Electric Force Microscopy in Contact-Resonant Mode by Minj, Albert, Serron, Jill, Celano, Umberto, Paredis, Kristof

“…Electric force microscopy (EFM)-based methods have the capacity to probe surface potential, dielectric properties, and surface charges. It can be robustly used…”
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Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics by Shi, Yuanyuan, Groven, Benjamin, Serron, Jill, Wu, Xiangyu, Nalin Mehta, Ankit, Minj, Albert, Sergeant, Stefanie, Han, Han, Asselberghs, Inge, Lin, Dennis, Brems, Steven, Huyghebaert, Cedric, Morin, Pierre, Radu, Iuliana, Caymax, Matty

“…In view of its epitaxial seeding capability, c-plane single crystalline sapphire represents one of the most enticing, industry-compatible templates to realize…”
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Direct Assessment of Defective Regions in Monolayer MoS 2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements by Minj, Albert, Mootheri, Vivek, Banerjee, Sreetama, Nalin Mehta, Ankit, Serron, Jill, Hantschel, Thomas, Asselberghs, Inge, Goux, Ludovic, Kar, Gouri Sankar, Heyns, Marc, Lin, Dennis H C

“…Implementing two-dimensional materials in field-effect transistors (FETs) offers the opportunity to continue the scaling trend in the complementary…”
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Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements by Minj, Albert, Mootheri, Vivek, Banerjee, Sreetama, Nalin Mehta, Ankit, Serron, Jill, Hantschel, Thomas, Asselberghs, Inge, Goux, Ludovic, Kar, Gouri Sankar, Heyns, Marc, Lin, Dennis H. C.

“…Implementing two-dimensional materials in field-effect transistors (FETs) offers the opportunity to continue the scaling trend in the complementary…”
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Conductivity Enhancement in Transition Metal Dichalcogenides: A Complex Water Intercalation and Desorption Mechanism by Serron, Jill, Minj, Albert, Spampinato, Valentina, Franquet, Alexis, Rybalchenko, Yevhenii, Boulon, Marie-Emmanuelle, Brems, Steven, Silva, Henry Medina, Shi, Yuanyuan, Groven, Benjamin, Villarreal, Renan, Conard, Thierry, van der Heide, Paul, Hantschel, Thomas

“…The complexity of the water adsorption–desorption mechanism at the interface of transition metal dichalcogenides (TMDs) and its impact on their current…”
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Correlated Intrinsic Electrical and Chemical Properties of Epitaxial WS 2 via Combined C‐AFM and ToF‐SIMS Characterization by Spampinato, Valentina, Shi, Yuanyuan, Serron, Jill, Minj, Albert, Groven, Benjamin, Hantschel, Thomas, van der Heide, Paul, Franquet, Alexis

“…Abstract Atomically thin, 2D semiconductors, such as transition metal dichalcogenides, complement silicon in ultra‐scaled nano‐electronic devices. However, the…”
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Achieving High Ferroelectric Polarization in Ultrathin BaTiO 3 Films on Si by Bagul, Pratik, Han, Han, Lagrain, Pieter, Sergeant, Stefanie, Hoflijk, Ilse, Serron, Jill, Richard, Olivier, Conard, Thierry, Van Houdt, Jan, De Wolf, Ingrid, McMitchell, Sean R. C.

“…Abstract Ferroelectrics show promise for low‐power, non‐volatile memory technologies. However, material challenges in state‐of‐the‐art ferroelectric hafnates…”
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