Search Results - "Serradeil, V."

CoSi2 ultra-thin layer formation kinetics and texture from X-ray diffraction by Delattre, R., Simola, R., Rivero, C., Serradeil, V., Perrin-Pellegrino, C., Thomas, O.

“…In this study we investigated the influence of cobalt thickness (from 50nm to 10nm) on the kinetics and texture of CoSi2 layers. In-situ X-ray diffraction…”
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Decreasing reaction rate at the end of silicidation: In-situ CoSi2 XRD study and modeling by Delattre, R., Simola, R., Rivero, C., Serradeil, V., Perrin-Pellegrino, C., Thomas, O.

“…[Display omitted] ► We investigate CoSi2 kinetics using in-situ XRD. ► A TiN capping layer decreases the CoSi2 formation rate. ► The CoSi2 texture of our films…”
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Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90 nm technology by SARAFIANOS, A, LLIDOA, R, DUTERTRE, J. M, GAGLIANO, O, SERRADEIL, V, LISART, M, GOUBIER, V, TRIA, A, POUGET, V, LEWIS, D

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Arsenic and phosphorus codiffusion during silicon microelectronic processes by Rodriguez, N., Portavoce, A., Delalleau, J., Grosjean, C., Serradeil, V., Girardeaux, C.

“…Arsenic (As) and phosphorus (P) implantations are concurrently used to create the n-zones of recent microelectronic device pn-junctions. We studied the As–P…”
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Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90nm technology by Sarafianos, A., Llido, R., Dutertre, J.M., Gagliano, O., Serradeil, V., Lisart, M., Goubier, V., Tria, A., Pouget, V., Lewis, D.

“…This paper presents the electrical model of a PMOS transistor in 90nm technology under 1064nm Photoelectric Laser Stimulation. The model was built and tuned…”
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Decreasing reaction rate at the end of silicidation: In-situ CoSi sub(2) XRD study and modeling by Delattre, R, Simola, R, Rivero, C, Serradeil, V, Perrin-Pellegrino, C, Thomas, O

“…In-situ X-ray diffraction was used to determine CoSi sub(2) growth kinetics from 100 nm CoSi films. In this work, we discuss about an unexpectedly slow…”
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Thermoelectric Nanowires Based on Bismuth Telluride by Khedim, M. Ben, Cagnon, L., Serradeil, V., Fournier, T., Bourgault, D.

“…Bismuth antimony telluride (BixSb2-xTe3) and bismuth tellurium selenide (Bi2Te3-xSex) nanowires, witha 60nmdiameter, have been potentiostatically…”
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Arsenic and phosphorus codiffusion during silicon microelectronic processes by Rodriguez, N., Portavoce, A., Delalleau, J., Grosjean, C., Serradeil, V., Girardeaux, C.

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Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology by Sarafianos, A., Gagliano, O., Serradeil, V., Lisart, M., Dutertre, J-M, Tria, A.

“…This paper presents measurements of pulsed photoelectrical laser stimulation of an NMOS transistor in 90nm technology. The laser power was able to trig the NPN…”
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Characterization and TCAD simulation of 90 nm technology transistors under continous photoelectric laser stimulation for failure analysis improvement by Llido, R., Sarafianos, A., Gagliano, O., Serradeil, V., Goubier, V., Lisart, M., Haller, G., Pouget, V., Lewis, D., Dutertre, J. M., Tria, A.

“…This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated…”
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In-situ study and modeling of the decreasing reaction rate at the end of CoSi2 formation by Delattre, R., Simola, R., Rivero, C., Serradeil, V., Perrin-Pellegrino, C., Thomas, O.

“…In-situ X-Ray diffraction was used to determine CoSi 2 kinetics growth from 100 nm CoSi. In this work, we discuss about an unexpectedly slow reaction that is…”
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