Search Results - "Serenkov, I. T."

The Use of Medium-Energy Atom Beams for Solid-State PIXE Diagnostics by Serenkov, I. T., Sakharov, V. I.

“…The possibilities of using medium-energy (hundreds of kiloelectronvolts) ion beams for diagnostics of solids by measuring the spectra of characteristic X-ray…”
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The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates by Sobolev, N. A., Kalyadin, A. E., Shtel’makh, K. F., Shek, E. I., Sakharov, V. I., Serenkov, I. T.

“…Effect of the pump power on the photoluminescence intensity for dislocation-related luminescence centers is studied in p -type silicon containing oxygen…”
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Quantum Yield of a Silicon Avalanche Photodiode in the Wavelength Range of 120–170 nm by Aruev, P. N., Belik, V. P., Zabrodskii, V. V., Kruglov, E. M., Nikolaev, A. V., Sakharov, V. I., Serenkov, I. T., Filimonov, V. V., Sherstnev, E. V.

“…We have designed a silicon avalanche photodiode for detecting vacuum ultraviolet radiation. The external quantum yield of a silicon avalanche photodiode has…”
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Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions by Sobolev, N. A., Kalyadin, A. E., Sakharov, V. I., Serenkov, I. T., Shek, E. I., Parshin, E. O., Melesov, N. S., Simakin, C. G.

“…The influence exerted by the conditions of the post-implantation annealing of silicon implanted with germanium ions on how luminescence centers are formed is…”
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Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions by Sobolev, N. A., Aleksandrov, O. V., Sakharov, V. I., Serenkov, I. T., Shek, E. I., Kalyadin, A. E., Parshin, E. O., Melesov, N. S.

“…The implantation of Czochralski-grown p -type silicon with 1-MeV germanium ions at a dose of 2 . 5 × 10 14 cm –2 does not lead to the amorphization of…”
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Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film by Sobolev, N. A., Sakharov, V. I., Serenkov, I. T., Bondarev, A. D., Karabeshkin, K. V., Fomin, E. V., Kalyadin, A. E., Mikoushkin, V. M., Shek, E. I., Sherstnev, E. V.

“…The concentration profiles of defects produced in structures upon the implantation of nitrogen ions into GaAs epitaxial layers with an uncovered surface and…”
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Initial stages of the growth of barium strontium titanate films on a semi-isolating silicon carbide substrate by Tumarkin, A. V., Serenkov, I. T., Sakharov, V. I., Razumov, S. V., Odinets, A. A., Zlygostov, M. V., Sapego, E. N., Afrosimov, V. V.

“…The initial stages of the growth of ferroelectric barium strontium titanate films on single-crystal silicon carbide substrates have been studied for the first…”
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Evidence of multiphase nucleation in perovskite film growth on MgO substrate from medium energy ion scattering analysis : Example of YBaCuO and (Ba,Sr)TiO3 by AFROSIMOV, V. V, IL'IN, R. N, KARMANENKO, S. F, MELKOV, A. A, SAKHAROV, V. I, SERENKOV, I. T

“…Initial stages of perovskite YBa2Cu3O7-x and BaySr1-yTiO3 films growth on MgO substrate were studied by middle energy ion scattering (MEIS) with He+190 keV…”
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Quantum Yield of an Avalanche Silicon Photodiode in the 114–170 and 210–1100 nm Wavelength Ranges by Aruev, P. N., Belik, V. P., Blokhin, A. A., Zabrodskii, V. V., Nikolaev, A. V., Sakharov, V. I., Serenkov, I. T., Filimonov, V. V., Sherstnev, E. V.

“…An avalanche silicon photodiode has been developed for the near IR, visible, UV and VUV light ranges. The external quantum efficiency has been studied in the…”
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Cationic disorder and phase segregation in LaAlO3/SrTiO3 heterointerfaces evidenced by medium-energy ion spectroscopy by Kalabukhov, A S, Boikov, Yu A, Serenkov, I T, Sakharov, V I, Popok, V N, Gunnarsson, R, Börjesson, J, Ljustina, N, Olsson, E, Winkler, D, Claeson, T

“…Medium-energy ion spectroscopy (MEIS) has been used to study the depth profile and deduce the distribution of possible cationic substitutions in LaAlO3/SrTiO3…”
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Influence of mechanical stresses on the charge state of the interface in the LaAlO3/(001)SrTiO3 heterostructures with a distorted stoichiometry by Boikov, Yu. A., Serenkov, I. T., Sakharov, V. I., Danilov, V. A.

“…The medium-energy ion scattering (MEIS) spectroscopy was used to obtain the data on the structure and stoichiometry of interfaces in LaAlO 3 /SrTiO 3 (LAO/STO)…”
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Improved cationic stoichiometry and insulating behavior at the interface of LaAlO3/SrTiO3 formed at high oxygen pressure during pulsed-laser deposition by Kalabukhov, A, Boikov, Yu. A, Serenkov, I. T, Sakharov, V. I, Börjesson, J, Ljustina, N, Olsson, E, Winkler, D, Claeson, T

“…Medium-energy ion spectroscopy, MEIS, and scanning transmission electron microscopy, STEM, were used to correlate the atomic structure of LaAlO3/SrTiO3…”
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Electro- and Magnetotransport near a LaAlO3/SrTiO3 Interphase Boundary by Boikov, Yu. A., Danilov, V. A., Serenkov, I. T., Sakharov, V. I., Volkov, M. P.

“…Comparison of the channel spectra of medium energy ion scattering, visualized for LaAlO 3 /(001)SrTiO 3 heterostructures with a thickness of the lanthanum…”
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Initial Stages of Growth of Barium Zirconate Titanate and Barium Stannate Titanate Films on Single-Crystal Sapphire and Silicon Carbide by Tumarkin, A. V., Zlygostov, M. V., Serenkov, I. T., Sakharov, V. I., Afrosimov, V. V., Odinets, A. A.

“…The initial stages of growth of barium zirconate titanate and barium stannate titanate ferroelectric films on single-crystal sapphire and silicon carbide are…”
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The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers by Sobolev, N. A., Ber, B. Ya, Kazantsev, D. Yu, Kalyadin, A. E., Karabeshkin, K. V., Mikoushkin, V. M., Sakharov, V. I., Serenkov, I. T., Shek, E. I., Sherstnev, E. V., Shmidt, N. M.

“…Secondary-ion mass spectrometry and Rutherford proton backscattering have been used to measure the concentration profiles of nitrogen atoms and examine the…”
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Elastically strained and relaxed La0.67Ca0.33MnO3 films grown on lanthanum aluminate substrates with different orientations by Boikov, Yu. A., Serenkov, I. T., Sakharov, V. I., Claeson, T.

“…Structure of 40-nm thick La 0.67 Ca 0.33 MnO 3 (LCMO) films grown by laser evaporation on (001) and (110) LaAlO 3 (LAO) substrates has been investigated using…”
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Dislocation-related photoluminescence in silicon implanted with fluorine ions by Sobolev, N. A., Kalyadin, A. E., Sakharov, V. I., Serenkov, I. T., Shek, E. I., Karabeshkin, K. V., Karasev, P. A., Titov, A. I.

“…The implantation of 85-keV fluorine ions at a dose of 8.3 × 10 14 cm –2 into single crystal Si does not lead to formation of an amorphous layer. Subsequent…”
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Investigation of the initial stages of the growth of barium strontium titanate ferroelectric films by medium-energy ion scattering by Tumarkin, A. V., Serenkov, I. T., Sakharov, V. I.

“…The initial stages of the growth of barium strontium titanate (BaSrTiO 3 ) ferroelectric films deposited on single-crystal sapphire substrates have been…”
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Photoluminescence in Er-implanted AlGaN/GaN superlattices and GaN epilayers by Sobolev, N.A., Emel’yanov, A.M., Sakharov, V.I., Serenkov, I.T., Shek, E.I., Besyul`kin, A.I., Lundin, W.V., Shmidt, N.M., Usikov, A.S., Zavarin, E.E.

“…Photoluminescence (PL), structural and electrophysical properties of Al0.26Ga0.74N/GaN superlattices grown by metal-organic chemical vapor deposition,…”
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Influence of Mg and Mn doping on the RF-microwave dielectric properties of BaxSr1-xTiO3 films by Dedyk, A I, Karmanenko, S F, Melkov, A A, Pavlovskaya, M V, Sakharov, V I, Serenkov, I T

“…MgO and MnO2 were added to BaxSr1-xTiO3 (BSTO, x #~ 0.55) powder target used in cathode sputtering deposition process of ferroelectric films. The dependences…”
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