Search Results - "Seredova, N. V"

Properties of Semipolar GaN Grown on a Si(100) Substrate by Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Seredova, N. V., Solomnikova, A. V., Shcheglov, M. P., Kibalov, D. S., Smirnov, V. K.

“…Semipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with Si x N y…”
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ZnO/GaN heterostructure for LED applications by Titkov, I.E., Delimova, L.A., Zubrilov, A.S., Seredova, N.V., Liniichuk, I.A., Grekhov, I.V.

“…White electroluminescence (EL) from ZnO/GaN structures fabricated by pulsed laser deposition of Zn:In onto GaN:Mg/GaN structures MOCVD-grown on Al 2 O 3…”
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Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy by Bessolov, V. N., Konenkova, E. V., Seredova, N. V., Panteleev, V. N., Scheglov, M. E.

“…We report on the fabrication of nonpolar GaN(11‒20) structures by hydride vapor phase epitaxy using an AlN buffer layer synthesized by metalorganic vapor-phase…”
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A Study of the Influence Exerted by Structural Defects on Photoluminescence Spectra in n-3C-SiC by Lebedev, A. A., Nikitina, I. P., Seredova, N. V., Poletaev, N. K., Lebedev, S. P., Kozlovski, V. V., Zubov, A. V.

“…Photoluminescence (PL) spectra have been studied in 3 C -SiC/4 H -SiC heterostructures and 3 C ‑SiC single crystals. It was shown that epitaxial 3 C -SiC…”
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Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers by Lebedev, A. A., Ber, B. Ya, Oganesyan, G. A., Belov, S. V., Lebedev, S. P., Nikitina, I. P., Seredova, N. V., Shakhov, L. V., Kozlovski, V. V.

“…The effects of 8-MeV proton irradiation on n -3 C -SiC epitaxial layers grown by sublimation on semi-insulating 4 H -SiC substrates are studied. Changes in the…”
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Luminescent properties of GaN-based epitaxial layers and heterostructures grown on porous SiC substrates by Mynbaev, K. D., Mynbaeva, M. G., Zubrilov, A. S., Seredova, N. V.

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Anisotropic Stresses in GaN Layers on an r-Al.sub.2O.sub.3 Substrate during Hydride Vapor Phase Epitaxy by Bessolov, V. N, Konenkova, E. V, Seredova, N. V, Panteleev, V. N, Scheglov, M. E

“…We report on the fabrication of nonpolar GaN(11â20) structures by hydride vapor phase epitaxy using an AlN buffer layer synthesized by metalorganic vapor-phase…”
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Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped p-4H-SiC (CVD) by Kozlovski, V. V., Lebedev, A. A., Bogdanova, E. V., Seredova, N. V.

“…The compensation of moderately doped p -4 H -SiC samples grown by the chemical vapor deposition (CVD) method under irradiation with 0.9-MeV electrons and…”
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Electrical Properties of n-GaN∕p-SiC Heterojunctions by Ledyaev, O. Yu

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Conductivity compensation in n-4H-SiC (CVD) under irradiation with 0.9-MeV electrons by Kozlovski, V. V., Lebedev, A. A., Lomasov, V. N., Bogdanova, E. V., Seredova, N. V.

“…The effect of electron irradiation on n -4 H -SiC is studied by the methods of capacitance-voltage characteristics and photoluminescence. The carrier-removal…”
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On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in p-4H-SiC by Lebedev, A. A., Ber, B. Ya, Bogdanova, E. V., Seredova, N. V., Kazantsev, D. Yu, Kozlovski, V. V.

“…Photoluminescence (PL) appearing in p -4 H -SiC upon its electron irradiation has been studied. A model that accounts for the dependence of the PL intensity on…”
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Effect of 3C-SiC irradiation with 8 MeV protons by Lebedev, A. A., Ber, B. Ya, Oganesyan, G. A., Belov, S. V., Seredova, N. V., Nikitina, I. P., Lebedev, S. P., Shakhov, L. V., Kozlovski, V. V.

“…Effects of proton irradiation in n-3C-SiC grown by sublimation on a 4H-SiC substrate have been studied by the Hall effect and photoluminescence methods. It was…”
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Study of the 3C-SiC layers grown on the 15R-SiC substrates by Lebedev, A. A., Abramov, P. L., Bogdanova, E. V., Zubrilov, A. S., Lebedev, S. P., Nelson, D. K., Seredova, N. V., Smirnov, A. N., Tregubova, A. S.

“…The 3 C -SiC layers grown on the 15 R -SiC substrates by sublimation epitaxy in vacuum are studied. Using X-ray topography and Raman spectroscopy, it is shown…”
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Use of sublimation epitaxy for obtaining volume 3C-SiC crystals by Lebedev, A. A., Abramov, P. L., Zubrilov, A. S., Bogdanova, E. V., Lebedev, S. P., Seredova, N. V., Tregubova, A. S.

“…It is demonstrated that polytype-homogeneous, thick (>100 μm) epitaxial 3C-SiC layers of good structural quality with diameters of no less than 25 mm can be…”
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ZnO/GaN heterostructure for LED applications by TITKOV, I. E, DELIMOVA, L. A, ZUBRILOV, A. S, SEREDOVA, N. V, LINIICHUK, I. A, GREKHOV, I. V

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