Search Results - "Seredin, B. M."

The Formation and Structure of Thermomigration Silicon Channels Doped with Ga by Lomov, A. A., Seredin, B. M., Martyushov, S. Yu, Zaichenko, A. N., Shul’pina, I. L.

“…Vertical through Si(Ga) p channels are created at 1450 K in c-Si(111) plates by thermomigration of local gallium zones. To this end, a technique is proposed…”
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Structural Features and Electrical Properties of Si(Al) Thermomigration Channels for High-Voltage Photoelectric Converters by Lomov, A. A., Seredin, B. M., Martyushov, S. Yu, Tatarintsev, A. A., Popov, V. P., Malibashev, A. V.

“…The results of a study of the structural features and electrical properties of the end-to-end thermomigration (ThM) of the p -channels of Si(Al) in a silicon…”
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Structural Perfection and Composition of Gallium-Doped Thermomigration Silicon Layers by Lomov, A. A., Seredin, B. M., Martyushov, S. Yu, Zaichenko, A. N., Simakin, S. G., Shul’pina, I. L.

“…A technique that allows one to form thick thermomigration silicon layers heavily doped with gallium for prospective power electronic devices is proposed. The…”
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Determination of the Thermodynamic Parameters of Doping Silicon by Means of Thermomigration by Kuznetsov, V. V., Rubtsov, E. R., Seredin, B. M.

“…The effect of the Al–Ga melt composition on the mass transfer processes occurring during silicon recrystallization has been investigated by the thermomigration…”
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On the limit of the injection ability of silicon p+–n junctions as a result of fundamental physical effects by Mnatsakanov, T. T., Levinshtein, M. E., Shuman, V. B., Seredin, B. M.

“…Analytical expressions describing the dependences of the p + – n -junction leakage current on the doping level of the p + -type region are derived by taking…”
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Thermomigration Kinetics in the Si–Al–Ga and Si–Al–Sn Systems by Kuznetsov, V. V., Lozovskii, V. N., Popov, V. P., Rubtsov, E. R., Seredin, B. M.

“…The thermodynamics and kinetics of the thermomigration of molten zones based on Al–Ga and Al–Ga melts in the preparation of silicon epilayers have been studied…”
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Manifestations of induced instability of phase boundaries during thermomigration by Knyazev, S. Yu, Lozovskii, V. N., Lozovskii, V. S., Seredin, B. M.

“…A technique for detection of the theoretically predicted effect of transfer of a local disturbance from one phase boundary of a flat liquid zone to another…”
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Crystal defects in solar cells produced by the method of thermomigration by Lozovskii, V. N., Lomov, A. A., Lunin, L. S., Seredin, B. M., Chesnokov, Yu. M.

“…The results of studying the crystal structure of regions in silicon, recrystallized during the course of thermomigration of the liquid Si–Al zone in the volume…”
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Abrasive blasting of silicon surfaces during the thermal-migration process by Lunin, L. S., Seredin, B. M., Seredin, L. M.

“…The influence of the main process-dependent parameters characterizing the abrasive blasting of singlecrystal silicon substrates on the treatment efficiency,…”
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Growth of GaxIn1 − xAsyP1 − y/GaAs quantum dot arrays by ion beam deposition by Sysoev, I. A., Lunina, M. L., Alfimova, D. L., Blagin, A. V., Gusev, D. A., Seredin, B. M.

“…Experimental data are presented that demonstrate the possibility of producing GaInAsP quantum dots on GaAs by ion beam deposition. The morphology of the…”
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Growth of Ga x In1 − x As y P1 − y /GaAs quantum dot arrays by ion beam deposition by Sysoev, I. A., Lunina, M. L., Alfimova, D. L., Blagin, A. V., Gusev, D. A., Seredin, B. M.

“…Experimental data are presented that demonstrate the possibility of producing GaInAsP quantum dots on GaAs by ion beam deposition. The morphology of the…”
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