Search Results - "Sercel, P. C."
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Direct determination of the ambipolar diffusion length in GaAs/AlGaAs heterostructures by cathodoluminescence
Published in Applied physics letters (16-10-1989)“…A new technique for determining carrier diffusion lengths by cathodoluminescence measurements is presented. The technique is extremely accurate and can be…”
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Analytical technique for determining the polarization dependence of optical matrix elements in quantum wires with band-coupling effects
Published in Applied physics letters (06-08-1990)“…We present an analytical technique for determining polarization-dependent optical transition matrix elements in quantum wires which rigorously incorporates the…”
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Application of a total-angular-momentum basis to quantum-dot band structure
Published in Physical review letters (09-07-1990)Get full text
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The shape of self-assembled InAs islands grown by molecular beam epitaxy
Published in Journal of electronic materials (01-05-1999)“…We have determined the shape of InAs quantum dots using reflection high energy electron diffraction. Our results indicate that self-assembled InAs islands…”
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Nanometer-scale GaAs clusters from organometallic precursors
Published in Applied physics letters (10-08-1992)“…We report the synthesis of crystalline nanometer-scale GaAs clusters by homogeneous vapor-phase nucleation from organometallic precursors. Cluster synthesis is…”
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Synthesis of luminescent silicon clusters by spark ablation
Published in Applied physics letters (13-09-1993)“…The synthesis of luminescent nanometer-scale Si clusters by spark ablation from a crystalline Si substrate is described. The cluster source, described in the…”
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Vapor phase synthesis of crystalline nanometer-scale GaAs clusters
Published in Applied physics letters (24-02-1992)“…We report the synthesis of crystalline nanometer-scale GaAs clusters in the 5–10 nm size regime. The clusters are formed by the homogeneous nucleation of a…”
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Excitation of nitrogen by fast H3+ ions
Published in Physical review. A, Atomic, molecular, and optical physics (01-04-1991)Get full text
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Lower‐dimensional quantum structures by selective growth and gas‐phase nucleation
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-07-1993)“…There is increasing interest in the potential application of quantum dots and quantum wires to various solid state devices. In this article, the physics of…”
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Conference Proceeding Journal Article -
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Type II broken-gap quantum wires and quantum dot arrays : a novel concept for self-doping semiconductor nanostructures
Published in Applied physics letters (08-10-1990)“…A novel concept for creating self-doping quantum wires and quantum dot arrays based upon the InAs-GaSb material system is proposed. The unusual type II,…”
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Polarization dependence of optical absorption and emission in quantum wires
Published in Physical review. B, Condensed matter (15-09-1991)Get full text
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Nanometer scale wire structures fabricated by diffusion-induced selective disordering of a GaAs(AlGaAs) quantum well
Published in Applied physics letters (26-06-1989)“…A shallow zinc diffusion technique is used to selectively disorder a GaAs quantum well creating nanometer scale wire structures. Spectrally resolved…”
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The role of Ga-droplet formation in nanometer-scale GaAs cluster synthesis from organometallic precursors
Published in Zeitschrift für Physik. D, Atoms, molecules, and clusters (01-03-1993)Get full text
Conference Proceeding Journal Article -
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Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction
Published in Applied physics letters (16-02-1998)“…We report a reflection high energy electron diffraction study of InAs self-organized quantum dots grown on GaAs (001). We observe facet reflections along the…”
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Excitation of nitrogen by fast H 3 + ions
Published in Physical review. A, Atomic, molecular, and optical physics (01-04-1991)Get full text
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Formation of InAs/GaAs quantum dots by molecular beam epitaxy: Reversibility of the islanding transition
Published in Applied physics letters (20-10-1997)“…We report a study of the dynamics of coherent island formation in InAs/GaAs films grown by molecular beam epitaxy. A comparison of the temperature dependence…”
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Intrinsic Gap States in Semiconductor Nanocrystals
Published in Physical review letters (20-09-1999)Get full text
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Photoluminescence study of in situ annealed InAs quantum dots: Double-peak emission associated with bimodal size distribution
Published in Applied physics letters (14-12-1998)“…We report a photoluminescence study of self-assembled InAs islands subjected to in situ annealing prior to the growth of a capping layer. A distinctive…”
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