Search Results - "Sercel, P. C."

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    Direct determination of the ambipolar diffusion length in GaAs/AlGaAs heterostructures by cathodoluminescence by ZAREM, H. A, SERCEL, P. C, LEBENS, J. A, ENG, L. E, YARIV, A, VAHALA, K. J

    Published in Applied physics letters (16-10-1989)
    “…A new technique for determining carrier diffusion lengths by cathodoluminescence measurements is presented. The technique is extremely accurate and can be…”
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    Journal Article
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    Analytical technique for determining the polarization dependence of optical matrix elements in quantum wires with band-coupling effects by SERCEL, P. C, VAHALA, K. J

    Published in Applied physics letters (06-08-1990)
    “…We present an analytical technique for determining polarization-dependent optical transition matrix elements in quantum wires which rigorously incorporates the…”
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    Journal Article
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    The shape of self-assembled InAs islands grown by molecular beam epitaxy by Lee, Hao, Yang, Weidong, Sercel, Peter C., Norman, A. G.

    Published in Journal of electronic materials (01-05-1999)
    “…We have determined the shape of InAs quantum dots using reflection high energy electron diffraction. Our results indicate that self-assembled InAs islands…”
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    Journal Article
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    Nanometer-scale GaAs clusters from organometallic precursors by SERCEL, P. C, SAUNDERS, W. A, ATWATER, H. A, VAHALA, K. J, FLAGAN, R. C

    Published in Applied physics letters (10-08-1992)
    “…We report the synthesis of crystalline nanometer-scale GaAs clusters by homogeneous vapor-phase nucleation from organometallic precursors. Cluster synthesis is…”
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    Journal Article
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    Synthesis of luminescent silicon clusters by spark ablation by SAUNDERS, W. A, SERCEL, P. C, LEE, R. B, ATWATER, H. A, VAHALA, K. J, FLAGAN, R. C, ESCORCIA-APARCIO, E. J

    Published in Applied physics letters (13-09-1993)
    “…The synthesis of luminescent nanometer-scale Si clusters by spark ablation from a crystalline Si substrate is described. The cluster source, described in the…”
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    Journal Article
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    Vapor phase synthesis of crystalline nanometer-scale GaAs clusters by SAUNDERS, W. A, SERCEL, P. C, ATWATER, H. A, VAHALA, K. J, FLAGAN, R. C

    Published in Applied physics letters (24-02-1992)
    “…We report the synthesis of crystalline nanometer-scale GaAs clusters in the 5–10 nm size regime. The clusters are formed by the homogeneous nucleation of a…”
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    Journal Article
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    Lower‐dimensional quantum structures by selective growth and gas‐phase nucleation by Vahala, Kerry J., Saunders, Winston A., Tsai, Charles S., Sercel, Peter C., Kuech, Tom, Atwater, Harry A., Flagan, Richard C.

    “…There is increasing interest in the potential application of quantum dots and quantum wires to various solid state devices. In this article, the physics of…”
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    Conference Proceeding Journal Article
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    Type II broken-gap quantum wires and quantum dot arrays : a novel concept for self-doping semiconductor nanostructures by SERCEL, P. C, VAHALA, K. J

    Published in Applied physics letters (08-10-1990)
    “…A novel concept for creating self-doping quantum wires and quantum dot arrays based upon the InAs-GaSb material system is proposed. The unusual type II,…”
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    Journal Article
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    Nanometer scale wire structures fabricated by diffusion-induced selective disordering of a GaAs(AlGaAs) quantum well by ZAREM, H. A, SERCEL, P. C, HOENK, M. E, LEBENS, J. A, VAHALA, K. J

    Published in Applied physics letters (26-06-1989)
    “…A shallow zinc diffusion technique is used to selectively disorder a GaAs quantum well creating nanometer scale wire structures. Spectrally resolved…”
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    Journal Article
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    Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction by Lee, Hao, Lowe-Webb, Roger, Yang, Weidong, Sercel, Peter C.

    Published in Applied physics letters (16-02-1998)
    “…We report a reflection high energy electron diffraction study of InAs self-organized quantum dots grown on GaAs (001). We observe facet reflections along the…”
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    Journal Article
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    Formation of InAs/GaAs quantum dots by molecular beam epitaxy: Reversibility of the islanding transition by Lee, Hao, Lowe-Webb, Roger R., Yang, Weidong, Sercel, Peter C.

    Published in Applied physics letters (20-10-1997)
    “…We report a study of the dynamics of coherent island formation in InAs/GaAs films grown by molecular beam epitaxy. A comparison of the temperature dependence…”
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    Journal Article
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    Photoluminescence study of in situ annealed InAs quantum dots: Double-peak emission associated with bimodal size distribution by Lee, Hao, Lowe-Webb, Roger, Johnson, Thomas J., Yang, Weidong, Sercel, Peter C.

    Published in Applied physics letters (14-12-1998)
    “…We report a photoluminescence study of self-assembled InAs islands subjected to in situ annealing prior to the growth of a capping layer. A distinctive…”
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    Journal Article
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