A 1/1.57-inch 50Mpixel CMOS Image Sensor With 1.0μm All-Directional Dual Pixel by 0.5μm-Pitch Full-Depth Deep-Trench Isolation Technology

As the strong demand for higher resolution and new functionality is rapidly increasing in the mobile CMOS Image Sensor (CIS) market, we have seen the emergence of: submicron pixels, >200M pixels, fast readout, global shutter, high dynamic range, and phase-detection autofocus (PDAF) [1 - 3]. Among...

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Published in:2022 IEEE International Solid- State Circuits Conference (ISSCC) Vol. 65; pp. 102 - 104
Main Authors: Jung, Taesub, Fujita, Masato, Cho, Jeongjin, Lee, Kyungduck, Seol, Doosik, An, Sungmin, Lee, Chanhee, Jeong, Youjin, Jung, Minji, Park, Sachoun, Baek, Seungki, Jung, Seungki, Lee, Seunghwan, Yun, Jungbin, Shim, Eun Sub, Han, Heetak, Park, Eunkyung, Sul, Haesick, Kang, Sehyeon, Lee, Kyungho, Ahn, JungChak, Chang, Duckhyun
Format: Conference Proceeding
Language:English
Published: IEEE 20-02-2022
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Summary:As the strong demand for higher resolution and new functionality is rapidly increasing in the mobile CMOS Image Sensor (CIS) market, we have seen the emergence of: submicron pixels, >200M pixels, fast readout, global shutter, high dynamic range, and phase-detection autofocus (PDAF) [1 - 3]. Among these, PDAF is an essential feature of cutting-edge CIS for accurate autofocus at extremely low-light situations, and dual-pixel technology has been widely used for AF of the entire image area [4]. To implement high pixel resolution in a limited optical size, the pixel size has continued to shrink, and the pixel structure has evolved to maintain high image quality. However, for a dual pixel, integrating two photodiodes (PDs) in one pixel by backside deep trench isolation (BDTI) has technical limitations and causes degradation of image AF performance as well as image quality.
ISSN:2376-8606
DOI:10.1109/ISSCC42614.2022.9731567