Search Results - "Seok, Tae Jun"

High‐Performance, Transparent Thin Film Hydrogen Gas Sensor Using 2D Electron Gas at Interface of Oxide Thin Film Heterostructure Grown by Atomic Layer Deposition by Kim, Sung Min, Kim, Hye Ju, Jung, Hae Jun, Park, Ji‐Yong, Seok, Tae Jun, Choa, Yong‐Ho, Park, Tae Joo, Lee, Sang Woon

“…A high‐performance, transparent, and extremely thin (<15 nm) hydrogen (H2) gas sensor is developed using 2D electron gas (2DEG) at the interface of an…”
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Field-Effect Device Using Quasi-Two-Dimensional Electron Gas in Mass-Producible Atomic-Layer-Deposited Al2O3/TiO2 Ultrathin (<10 nm) Film Heterostructures by Seok, Tae Jun, Liu, Yuhang, Jung, Hae Jun, Kim, Soo Bin, Kim, Dae Hyun, Kim, Sung Min, Jang, Jae Hyuck, Cho, Deok-Yong, Lee, Sang Woon, Park, Tae Joo

“…We report the field-effect transistors using quasi-two-dimensional electron gas generated at an ultrathin (∼10 nm) Al2O3/TiO2 heterostructure interface grown…”
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Atomic-layer-deposited ZnSnO buffer layers for kesterite solar cells: Impact of Zn/(Zn+Sn) ratio on device performance by Cho, Jae Yu, Jang, Jun Sung, Karade, Vijay C., Nandi, Raju, Pawar, Pravin S., Seok, Tae-Jun, Moon, Wonjin, Park, Tae Joo, Kim, Jin Hyeok, Heo, Jaeyeong

“…Atomic layer deposition (ALD) has been used to synthesize earth-abundant and non-toxic ZnSnO thin films as potential replacements for CdS buffer layers in…”
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Interface Carriers and Enhanced Electron‐Phonon Coupling Effect in Al2O3/TiO2 Heterostructure Revealed by Resonant Inelastic Soft X‐Ray Scattering by Shao, Yu‐Cheng, Kuo, Cheng‐Tai, Feng, Xuefei, Chuang, Yi‐De, Seok, Tae Jun, Choi, Ji Hyeon, Park, Tae Joo, Cho, Deok‐Yong

“…The electronic structure and the electron‐phonon couplings in a novel mass‐production‐compatible Al2O3/TiO2 2D electron system (2DES) are investigated using…”
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Gas Sensors: High‐Performance, Transparent Thin Film Hydrogen Gas Sensor Using 2D Electron Gas at Interface of Oxide Thin Film Heterostructure Grown by Atomic Layer Deposition (Adv. Funct. Mater. 7/2019) by Kim, Sung Min, Kim, Hye Ju, Jung, Hae Jun, Park, Ji‐Yong, Seok, Tae Jun, Choa, Yong‐Ho, Park, Tae Joo, Lee, Sang Woon

“…In article number 1807760, Tae Joo Park, Sang Woon Lee, and co‐workers develop a high‐performance, transparent, and extremely thin (<15 nm) hydrogen gas sensor…”
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Chemical mechanism of formation of two-dimensional electron gas at the Al2O3/TiO2 interface by atomic layer deposition by Park, Jeongwoo, Eom, Hyobin, Kim, Seong Hwan, Seok, Tae Jun, Park, Tae Joo, Lee, Sang Woon, Shong, Bonggeun

“…Two-dimensional electron gases (2DEGs) localized at oxide heterointerfaces can potentially be used in applications associated with the design of novel…”
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In Situ Observation of Two-Dimensional Electron Gas Creation at the Interface of an Atomic Layer-Deposited Al2O3/TiO2 Thin-Film Heterostructure by Seok, Tae Jun, Liu, Yuhang, Choi, Ji Hyeon, Kim, Hye Ju, Kim, Dae Hyun, Kim, Sung Min, Jang, Jae Hyuck, Cho, Deok-Yong, Lee, Sang Woon, Park, Tae Joo

“…A two-dimensional electron gas (2DEG) was formed at the interface of an ultrathin Al2O3/TiO2 heterostructure that was fabricated using atomic layer deposition…”
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Highly Uniform Resistive Switching Performances Using Two-Dimensional Electron Gas at a Thin-Film Heterostructure for Conductive Bridge Random Access Memory by Kim, Sung Min, Kim, Hye Ju, Jung, Hae Jun, Kim, Seong Hwan, Park, Ji-Yong, Seok, Tae Jun, Park, Tae Joo, Lee, Sang Woon

“…This research demonstrates, for the first time, the development of highly uniform resistive switching devices with self-compliance current for conductive…”
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Dependence of electrical properties on sulfur distribution in atomic-layer-deposited HfO2 thin film on an InP substrate by Jin, Hyun Soo, Seok, Tae Jun, Cho, Deok-Yong, Park, Tae Joo

“…S passivation of a HfO2 film on an InP substrate is demonstrated using annealing in H2S ambient either before or after ALD of the HfO2 film. We examined the…”
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Interface Carriers and Enhanced Electron‐Phonon Coupling Effect in Al 2 O 3 /TiO 2 Heterostructure Revealed by Resonant Inelastic Soft X‐Ray Scattering by Shao, Yu‐Cheng, Kuo, Cheng‐Tai, Feng, Xuefei, Chuang, Yi‐De, Seok, Tae Jun, Choi, Ji Hyeon, Park, Tae Joo, Cho, Deok‐Yong

“…The electronic structure and the electron‐phonon couplings in a novel mass‐production‐compatible Al 2 O 3 /TiO 2 2D electron system (2DES) are investigated…”
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Interface Carriers and Enhanced Electron-Phonon Coupling Effect in Al2O3/TiO2 Heterostructure Revealed by Resonant Inelastic Soft X-Ray Scattering by Shao, Yu‐Cheng, Kuo, Cheng‐Tai, Feng, Xuefei, Chuang, Yi‐De, Seok, Tae Jun, Choi, Ji Hyeon, Park, Tae Joo, Cho, Deok‐Yong

“…The electronic structure and the electron-phonon couplings in a novel mass-production-compatible Al2O3/TiO2 2D electron system (2DES) are investigated using…”
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Black Si Photocathode with a Conformal and Amorphous MoSx Catalytic Layer Grown Using Atomic Layer Deposition for Photoelectrochemical Hydrogen Evolution by Kim, Dae Woong, Jung, Jin-Young, Kim, Dae Hyun, Yu, Jin-Young, Jang, Jae Hyuck, Jin, Hyun Soo, Seok, Tae Jun, Min, Yo-Sep, Lee, Jung-Ho, Park, Tae Joo

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Black Si Photocathode with a Conformal and Amorphous MoS x Catalytic Layer Grown Using Atomic Layer Deposition for Photoelectrochemical Hydrogen Evolution by Kim, Dae Woong, Jung, Jin-Young, Kim, Dae Hyun, Yu, Jin-Young, Jang, Jae Hyuck, Jin, Hyun Soo, Seok, Tae Jun, Min, Yo-Sep, Lee, Jung-Ho, Park, Tae Joo

“…We demonstrated how the photoelectrochemical (PEC) performance was enhanced by conformal deposition of an amorphous molybdenum sulfide (a-MoS x ) thin film on…”
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In Situ Observation of Two-Dimensional Electron Gas Creation at the Interface of an Atomic Layer-Deposited Al 2 O 3 /TiO 2 Thin-Film Heterostructure by Seok, Tae Jun, Liu, Yuhang, Choi, Ji Hyeon, Kim, Hye Ju, Kim, Dae Hyun, Kim, Sung Min, Jang, Jae Hyuck, Cho, Deok-Yong, Lee, Sang Woon, Park, Tae Joo

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Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation by Kim, Seung Hyun, Seok, Tae Jun, Jin, Hyun Soo, Kim, Woo-Byoung, Park, Tae Joo

“…•Ultrathin SiO2 interfacial layers grown using nitric acid oxidation and O3 oxidation were adopted at the interface of HfO2/Si.•Higher physical density of…”
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Field-Effect Device Using Quasi-Two-Dimensional Electron Gas in Mass-Producible Atomic-Layer-Deposited Al 2 O 3 /TiO 2 Ultrathin (<10 nm) Film Heterostructures by Seok, Tae Jun, Liu, Yuhang, Jung, Hae Jun, Kim, Soo Bin, Kim, Dae Hyun, Kim, Sung Min, Jang, Jae Hyuck, Cho, Deok-Yong, Lee, Sang Woon, Park, Tae Joo

“…We report the field-effect transistors using quasi-two-dimensional electron gas generated at an ultrathin (∼10 nm) Al O /TiO heterostructure interface grown…”
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Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing by Jin, Hyun Soo, Cho, Young Jin, Seok, Tae Jun, Kim, Dae Hyun, Kim, Dae Woong, Lee, Sang-Moon, Park, Jong-Bong, Yun, Dong-Jin, Kim, Seong Keun, Hwang, Cheol Seong, Park, Tae Joo

“…•ALD HfO2 films were grown on InP for III–V compound-semiconductor-based devices.•S passivation was performed with (NH4)2S solution and annealing under a H2S…”
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Nature of chemical states of sulfur embedded in atomic-layer-deposited HfO sub(2) film on Ge substrate for interface passivation by Cho, Deok-Yong, Seok, Tae Jun, Jin, Hyun Soo, Song, Hochul, Han, Seungwu, Park, Tae Joo

“…Sulfur was embedded in atomic-layer-deposited (ALD) HfO sub(2) films grown on Ge substrate by annealing under H sub(2)S gas before and after HfO sub(2) ALD…”
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Nature of chemical states of sulfur embedded in atomic-layer-deposited HfO 2 film on Ge substrate for interface passivation by Cho, Deok-Yong, Seok, Tae Jun, Jin, Hyun Soo, Song, Hochul, Han, Seungwu, Park, Tae Joo

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Nature of chemical states of sulfur embedded in atomic-layer-deposited HfO2 film on Ge substrate for interface passivation by Cho, Deok-Yong, Seok, Tae Jun, Jin, Hyun Soo, Song, Hochul, Han, Seungwu, Park, Tae Joo

“…Sulfur was embedded in atomic‐layer‐deposited (ALD) HfO2 films grown on Ge substrate by annealing under H2S gas before and after HfO2 ALD. The chemical states…”
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