Search Results - "Senz, ST"

Fundamental issues in wafer bonding by Gösele, U., Bluhm, Y., Kästner, G., Kopperschmidt, P., Kräuter, G., Scholz, R., Schumacher, A., Senz, St, Tong, Q.-Y., Huang, L.-J., Chao, Y.-L., Lee, T. H.

“…Semiconductor wafer bonding has increasingly become a technology of choice for materials integration in microelectronics, optoelectronics, and…”
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Formation of an amorphous product phase during the solid state reaction between a vitreous SiO2 thin film and a (001) BaTiO3 substrate by SENZ, St, GRAFF, A, HESSE, D, ABICHT, H.-P

“…The solid state chemical reaction was investigated as a model system for processes occurring during the sintering of BaTiO3 ceramics with the sintering…”
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“Compliant” twist-bonded GaAs substrates: The potential role of pinholes by Kopperschmidt, P., Senz, St, Scholz, R., Gösele, U.

“…By twist wafer bonding, thin (100) GaAs layers were transferred onto (100) GaAs handling wafers in order to fabricate structures like those suggested in the…”
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Crystallographic orientation and morphology of epitaxial In2O3 thin films grown on MgO(001) single crystal substrates by Sieber, H., Senz, St, Hesse, D.

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Relaxation of an epitaxial InGaAs film on a thin twist-bonded (100) GaAs substrate by Senz, St, Kästner, G., Gösele, U., Gottschalch, V.

“…A 30 nm (100) GaAs layer was transferred by twist wafer bonding to a (100) GaAs handling wafer. A similar structure was proposed in the literature as a…”
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Interface defects in integrated hybrid semiconductors by wafer bonding by Kopperschmidt, P., Senz, St, Scholz, R.

“…The integration of materials by wafer bonding offers novel device fabrication for applications in micromechanics, microelectronics, and optoelectronics. Two…”
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Formation of an amorphous product phase during the solid state reaction between a vitreous SiO 2 thin film and a (001) BaTiO 3 substrate by Senz, St, Graff, A, Hesse, D, Abicht, H.-P

“…The solid state chemical reaction of a thin SiO 2 film with a single-crystal (001) BaTiO 3 substrate has been investigated as a model system for processes…”
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Crystallographic orientation and morphology of epitaxial In 2O 3 thin films grown on MgO(001) single crystal substrates by Sieber, H., Senz, St, Hesse, D.

“…Thin epitaxial In 2O 3 films were grown on MgO(001) single crystal substrates by electron beam evaporation in a high-vacuum chamber. During the evaporation,…”
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Characterisation of interfacial properties in sputtered Co/Cu multilayers: X-ray reflectometry compared with TEM and AFM by Langer, J, Kräußlich, J, Mattheis, R, Senz, St, Hesse, D

“…Combining localised and global structural information we suggest that differences in the magnetoresistive effect in the first maximum of antiferromagnetic…”
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Interface defects in integrated hybrid semiconductors by wafer bonding by KOPPERSCHMIDT, P, SENZ, St, SCHOLZ, R

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Wafer bonding of gallium arsenide on sapphire by KOPPERSCHMIDT, P, KÄSTNER, G, SENZ, S, HESSE, D, GÖSELE, U

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Unexpected growth of GMR multilayers: 〈111〉 in-plane texture and grain bundling in 5 nm Fe/(Co/Cu)24 by Langer, J., Mattheis, R., Schmidt, S., Senz, St, Zimmermann, T.

“…Sputtered Co/Cu multilayers were investigated by X-ray diffractometry and TEM. We confirm a 〈111〉 texture perpendicular to the surface for layers grown with…”
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Direct wafer bonding and layer transfer for ferroelectric thin film integration by Alexe, M., Senz, St, Pignolet, A., Hesse, D., Gösele, U.

“…A novel fabrication process of ferroelectric-semiconductor heterostructures based on direct wafer bonding (DWB) and layer transfer is proposed…”
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Unexpected growth of GMR multilayers: < 111 > in-plane texture and grain bundling in 5 nm Fe/(Co/Cu) sub(24) by Langer, J, Mattheis, R, Schmidt, S, Senz, St, Zimmermann, T

“…Sputtered Co/Cu multilayers were investigated by X-ray diffractometry and TEM. We confirm a < 111 > texture perpendicular to the surface for layers grown with…”
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Phase identification of micro and macro bubbles at the interface of directly bonded GaAs on sapphire by SENZ, S, KOPPERSCHMIDT, P, KÄSTNER, G, HESSE, D

“…Direct wafer bonding (DWB) of 3″ GaAs and R-cut sapphire was performed in a microcleanroom using ultra pure water as cleaning agent. The initial bonding is…”
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Epitaxial Bi-layered perovskite ferroelectric thin film heterostructures by large area pulsed laser deposition by Pignolet, A., Alexe, M., Satyalakshmi, K. M., Senz, St, Hesse, D., Gösele, U.

“…Epitaxial thin films of Bi 4 Ti 3 O 12 , SrBi 2 Ta 2 O 9 and BaBi 4 Ti 4 O 15 have been epitaxially deposited onto 3-inch substrates by large area pulsed laser…”
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Structural and electrical properties of metal-ferroelectric-silicon heterostructure fabricated by a direct wafer bonding and layer transfer process by Alexe, M., Senz, St, Pignqlet, A., Hesse, D., Gösele, U.

“…Structural and electrical investigations revealed that a direct wafer bonding and layer transfer process yields good quality ferroelectric/Si interfaces for…”
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Direct wafer bonding and layer transfer-a new approach to integration of ferroelectric oxides into silicon technology by Alexe, M., Senz, St, Pignolet, A., Hesse, D., Gösele, U.

“…Metal-ferroelectric-silicon (MFS) structures were fabricated by a layer transfer process and direct wafer bonding (DWB) and by direct deposition of…”
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Determination of interfacial roughness and its correlation in sputtered CoZr/Cu multilayers by Langer, J, Mattheis, R, Kräußlich, J, Senz, St, Hesse, D, Schuhrke, Th, Zweck, J

“…We relate the information about interfacial roughness in multilayers obtained by X-ray reflectometry in the low angle regime to what can be determined from…”
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Structure and morphology of the reaction fronts during the formation of MgAl2O4 thin films by solid state reaction between R-cut sapphire substrates and MgO films by Hesse, D., Senz, ST, Scholz, R., Werner, P., Heydenreich, J.

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