Search Results - "Senevirathna, M. K. Indika"

Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy by Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Pieczulewski, Naomi A., Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson, Muller, David A., Neal, Adam T., Mou, Shin, Thompson, Michael O., Nair, Hari P., Schlom, Darrell G.

“…We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate of ∼1 µm/h with control of the silicon doping concentration from…”
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Thermal stability of InN epilayers grown by high pressure chemical vapor deposition by Acharya, Ananta R., Gamage, Sampath, Senevirathna, M.K. Indika, Alevli, Mustafa, Bahadir, Kucukgok, Melton, Andrew G., Ferguson, Ian, Dietz, Nikolaus, Thoms, Brian D.

“…► InN layers stable to 630°C where significant desorption of N2 began to occur. ► Desorption of N2 from InN is independent of V/III growth precursor ratio. ►…”
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Effect of reactor pressure on the electrical and structural properties of InN epilayers grown by high-pressure chemical vapor deposition by Indika Senevirathna, M. K., Gamage, Sampath, Atalay, Ramazan, Acharya, Ananta R., Unil Perera, A. G., Dietz, Nikolaus, Buegler, Max, Hoffmann, Axel, Su, Liqin, Melton, Andrew, Ferguson, Ian

“…The influence of super-atmospheric reactor pressures (2.5–18.5 bar) on the electrical and structural properties of InN epilayers deposited on GaN/sapphire…”
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Silicon-doped β -Ga2O3 films grown at 1 µ m/h by suboxide molecular-beam epitaxy by Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Pieczulewski, Naomi A., Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson, Muller, David A., Neal, Adam T., Mou, Shin, Thompson, Michael O., Nair, Hari P., Schlom, Darrell G.

“…We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate of ∼1 µm/h with control of the silicon doping concentration from…”
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Dye-sensitized solar cells made from nanocrystalline TiO2 films coated with outer layers of different oxide materials by Bandaranayake, K.M.P., Indika Senevirathna, M.K., Prasad Weligamuwa, P.M.G.M., Tennakone, K.

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Silicon-doped $\beta$-Ga$_2$O$_3$ films grown at 1 $\mu$m/h by suboxide molecular-beam epitaxy by Azizie, Kathy, Hensling, Felix V. E, Gorsak, Cameron A, Kim, Yunjo, Dryden, Daniel M, Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A, Birkhölzer, Yorick A, McCandless, Jonathan P, Jena, Debdeep, Xing, Huili G, Liu, Zi-Kui, Williams, Michael D, Green, Andrew J, Chabak, Kelson, Neal, Adam T, Mou, Shin, Thompson, Michael O, Nair, Hari P, Schlom, Darrell G

“…We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $\beta$-Ga$_2$O$_3$ at a growth rate of ~1 ${\mu}$m/h with control of the silicon doping…”
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