Search Results - "Sen, Dipanjan"
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Structural hierarchies define toughness and defect-tolerance despite simple and mechanically inferior brittle building blocks
Published in Scientific reports (13-07-2011)“…Mineralized biological materials such as bone, sea sponges or diatoms provide load-bearing and armor functions and universally feature structural hierarchies…”
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Meso-origami: Folding multilayer graphene sheets
Published in Applied physics letters (21-09-2009)“…Graphene features unique electronic, thermal, and mechanical properties, and the flexibility and strong attraction between graphene layers promotes the…”
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An all 2D bio-inspired gustatory circuit for mimicking physiology and psychology of feeding behavior
Published in Nature communications (27-09-2023)“…Animal behavior involves complex interactions between physiology and psychology. However, most AI systems neglect psychological factors in decision-making due…”
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Tearing Graphene Sheets From Adhesive Substrates Produces Tapered Nanoribbons
Published in Small (Weinheim an der Bergstrasse, Germany) (21-05-2010)“…Graphene is a truly two‐dimensional atomic crystal with exceptional electronic and mechanical properties. Whereas conventional bulk and thin‐film materials…”
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Alpha-helical protein networks are self-protective and flaw-tolerant
Published in PloS one (23-06-2009)“…Alpha-helix based protein networks as they appear in intermediate filaments in the cell's cytoskeleton and the nuclear membrane robustly withstand large…”
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Atomistic study of crack-tip cleavage to dislocation emission transition in silicon single crystals
Published in Physical review letters (11-06-2010)“…At low temperatures silicon is a brittle material that shatters catastrophically, whereas at elevated temperatures, the behavior of silicon changes drastically…”
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Crack Tip Opening Displacement in atomistic modeling of fracture of silicon
Published in Computational materials science (01-07-2011)“…► The atomic level fracture of single crystal silicon is quantified by the crack tip displacement, CTOD. ► The linear-elastic Griffith analysis is extended by…”
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Performance Evaluation of Dielectrically Modulated Extended Gate Single Cavity InGaAs/Si HTFET Based Label-Free Biosensor Considering Non-Ideal Issues
Published in IEEE sensors journal (15-02-2021)“…The dielectrically modulated heterostructure TFET based nanocavity embedded label-free biosensors are emerging as low power, highly sensitive bio-analyte…”
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Graphene Strain-Effect Transistor with Colossal ON/OFF Current Ratio Enabled by Reversible Nanocrack Formation in Metal Electrodes on Piezoelectric Substrates
Published in Nano letters (12-04-2023)“…Extraordinarily high carrier mobility in graphene has led to many remarkable discoveries in physics and at the same time invoked great interest in…”
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Insect-Inspired, Spike-Based, in-Sensor, and Night-Time Collision Detector Based on Atomically Thin and Light-Sensitive Memtransistors
Published in ACS nano (30-12-2022)“…Detecting a potential collision at night is a challenging task owing to the lack of discernible features that can be extracted from the available visual…”
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Junctionless double gate non-parabolic variable barrier height Si-MOSFET for energy efficient application
Published in Microsystem technologies : sensors, actuators, systems integration (01-11-2021)“…Analytical model for the computation of drain current of the junction-less double gate junction-less MOSFET with a variable barrier height has been presented…”
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A Sparse and Spike‐Timing‐Based Adaptive Photoencoder for Augmenting Machine Vision for Spiking Neural Networks
Published in Advanced materials (Weinheim) (01-12-2022)“…The representation of external stimuli in the form of action potentials or spikes constitutes the basis of energy efficient neural computation that emerging…”
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Power and delay analysis of dielectric modulated dual cavity Junctionless double gate field effect transistor based label-free biosensor
Published in Computers & electrical engineering (01-04-2022)“…•Detection of bio-molecules by dielectric modulated FET biosensor.•Power and delay vary significantly for charged biomolecules.•Dual cavity has better…”
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Design and Investigation of Double Gate Field Effect Transistor Based H2 Gas Sensor Using Ultra-Thin Molybdenum Disulfide
Published in SILICON (01-02-2023)“…In this article, a low-power hydrogen (H 2 ) gas sensor has been proposed using a two-dimensional (2D) material based Double Gate Field Effect Transistor…”
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A Peripheral-Free True Random Number Generator Based on Integrated Circuits Enabled by Atomically Thin Two-Dimensional Materials
Published in ACS nano (12-09-2023)“…A true random number generator (TRNG) is essential to ensure information security for Internet of Things (IoT) edge devices. While pseudorandom number…”
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Multi-Paradigm Modeling of Fracture of a Silicon Single Crystal under Mode II Shear Loading
Published in Journal of algorithms & computational technology (01-06-2008)“…We report a novel multi-paradigm multi-scale approach based on a combination of the first principles ReaxFF force field with an empirical Tersoff potential…”
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Analysis of D.C Parameters of Short-Channel Heterostructure Double Gate Junction-Less MOSFET Circuits Considering Quantum Mechanical Effects
Published in SILICON (01-04-2021)“…In this article, the electrical behavior of short channel SiGe Heterostructure Junction-Less DG-MOSFET have been studied by incorporating the quantum…”
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Atomistic study of the effect of crack tip ledges on the nucleation of dislocations in silicon single crystals at elevated temperature
Published in Materials science & engineering. A, Structural materials : properties, microstructure and processing (25-05-2011)“…▪. ► Large three-dimensional silicon single crystal of size 20 nm × 20 nm × 10 nm modeled by first principles based ReaxFF force field. ► First direct…”
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Noise immune dielectric modulated dual trench transparent gate engineered MOSFET as a label free biosensor: proposal and investigation
Published in Journal of computational electronics (2021)“…We propose and investigate a biosensor based on a transparent dielectric-modulated dual-trench gate-engineered metal–oxide–semiconductor field-effect…”
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