Reliability aware simulation flow: From TCAD calibration to circuit level analysis

Reliability aware simulation flow: From TCAD calibration to circuit level analysis

In this paper, we present a simulation flow based on TCAD model calibration against experimental transistor measurement and doping profile reverse engineering. Further the physical astatistical variability simulations at TCAD level are also adjusted to match the statistical measurement. This is foll...

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Bibliographic Details
Published in:2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) pp. 152 - 155
Main Authors: Hussin, Razaidi, Vanhaeren, Danielle, Horiguchi, Naoto, Kaczer, Ben, Asenov, Asen, Gerrer, Louis, Ding, Jie, Amaroso, Salvatore Maria, Wang, Liping, Semicic, Marco, Weckx, Pieter, Franco, Jacopo, Vanderheyden, Annelies
Format: Conference Proceeding Journal Article
Language:English
Published: IEEE 01-09-2015
Subjects:
aging
Calibration
Compact model
Computer simulation
Degradation
Devices
Integrated circuit modeling
Integrated circuit reliability
MOS devices
Reverse engineering
Semiconductor devices
Semiconductor process modeling
Semiconductors
Simulation
Statistical Reliability
Statistical Variability
TCAD simulation
Transistors
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Summary:In this paper, we present a simulation flow based on TCAD model calibration against experimental transistor measurement and doping profile reverse engineering. Further the physical astatistical variability simulations at TCAD level are also adjusted to match the statistical measurement. This is folloed up by oxide wear out reliability characterization and modelling. Finally statistical compact model libraries for fresh and aged devices are extracted from large samples of TCAD simulation results allowing the performance analysis of a 6T SRAM cell. The calibration procedure has been performed on P and NMOS transistors fabricated and characterized by IMEC, while Glasgow University performed the TCAD reverse engineering and calibration, and the statistical simulations using dedicated Gold Standard Simulations tools.
Bibliography:ObjectType-Article-2
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content type line 23
SourceType-Conference Papers & Proceedings-2
ISBN:1467378585
9781467378581
ISSN:1946-1569
1946-1577
DOI:10.1109/SISPAD.2015.7292281