Search Results - "Seki, Hirohumi"
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Stress Characterization of 4H-SiC Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method
Published in Applied spectroscopy (01-07-2016)“…We measured the depolarized and polarized Raman spectra of a 4H-SiC metal-oxide–semiconductor field-effect transistor (MOSFET) and found that compressive…”
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Abnormal Behavior of Longitudinal Optical Phonon in Silicon Dioxide Films on 4H–SiC Bulk Epitaxial Substrate Using Fourier Transform Infrared (FT-IR) Spectroscopy
Published in Applied spectroscopy (01-05-2013)“…We report the abnormal behavior of longitudinal optical (LO) phonon in a silicon dioxide (SiO2) film on a 4H-SiC bulk epitaxial substrate using an attenuated…”
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Characterization of Inhomogeneity in Silicon Dioxide Films on 4H-Silicon Carbide Epitaxial Substrate Using a Combination of Fourier Transform Infrared and Cathodoluminescence Spectroscopy
Published in Applied spectroscopy (01-10-2014)“…We measured the Fourier transform infrared (FT-IR) and cathodoluminescence (CL) spectra of silicon dioxide (SiO2) films grown on 4H-silicon carbide (4H-SiC)…”
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A case of bacterial aneurysm that occurred in the external carotid artery
Published in Nō shinkei geka (01-02-2006)“…Occurrence of a mycotic aneurysm extracranially is extremely rare. We report our experience with a case of mycotic aneurysm that occurred in the external…”
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Characterization of Thermal Oxides on 4H Silicon Carbide (4H-SiC) Epitaxial Substrate Using Fourier Transform Infrared Spectroscopy
Published in Applied spectroscopy (01-09-2015)“…We measured the Fourier transform infrared (FT-IR) spectra of thermal oxides with various thicknesses, grown thermally on 4H silicon carbide (4H-SiC)…”
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Characterization of Silicon Dioxide Films on a 4H-SiC Si(0001) Face by Fourier Transform Infrared (FT-IR) Spectroscopy and Cathodoluminescence Spectroscopy
Published in Applied spectroscopy (01-05-2011)“…We used Fourier transform infrared (FT-IR) spectroscopy to characterize silicon dioxide (SiO2) films on a 4H-SiC(0001) Si face. We found that the peak…”
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Annealing Effect on Structural Defects in Low-Dose Separation-by-Implanted-Oxygen Wafers
Published in Japanese Journal of Applied Physics (01-10-2006)“…The annealing characteristics of low-dose separation-by-implanted-oxygen (SIMOX) (100) Si have been investigated by transmission electron microscopy (TEM)…”
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Behavior of Plasma Produced by a Long CO 2 -Laser Pulse in a Spindle-Cusp
Published in Japanese Journal of Applied Physics (01-05-1986)“…A plasma was generated at the null-field center of a spindle-cusp magnetic container by using a high-power CO 2 -laser beam with a relatively long pulse…”
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Behavior of plasma produced by a long CO2-laser pulse in a spindle-cusp
Published in Japanese journal of applied physics (01-05-1986)Get full text
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