Search Results - "Seki, Hirohumi"

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  1. 1

    Stress Characterization of 4H-SiC Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method by Yoshikawa, Masanobu, Kosaka, Kenichi, Seki, Hirohumi, Kimoto, Tsunenobu

    Published in Applied spectroscopy (01-07-2016)
    “…We measured the depolarized and polarized Raman spectra of a 4H-SiC metal-oxide–semiconductor field-effect transistor (MOSFET) and found that compressive…”
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    Journal Article
  2. 2

    Abnormal Behavior of Longitudinal Optical Phonon in Silicon Dioxide Films on 4H–SiC Bulk Epitaxial Substrate Using Fourier Transform Infrared (FT-IR) Spectroscopy by Yoshikawa, Masanobu, Seki, Hirohumi, Yamane, Tsuneyuki, Nanen, Yuichiro, Kato, Muneharu, Kimoto, Tsunenobu

    Published in Applied spectroscopy (01-05-2013)
    “…We report the abnormal behavior of longitudinal optical (LO) phonon in a silicon dioxide (SiO2) film on a 4H-SiC bulk epitaxial substrate using an attenuated…”
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    Journal Article
  3. 3

    Characterization of Inhomogeneity in Silicon Dioxide Films on 4H-Silicon Carbide Epitaxial Substrate Using a Combination of Fourier Transform Infrared and Cathodoluminescence Spectroscopy by Yoshikawa, Masanobu, Seki, Hirohumi, Inoue, Keiko, Nanen, Yuichiro, Kimoto, Tsunenobu

    Published in Applied spectroscopy (01-10-2014)
    “…We measured the Fourier transform infrared (FT-IR) and cathodoluminescence (CL) spectra of silicon dioxide (SiO2) films grown on 4H-silicon carbide (4H-SiC)…”
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    Journal Article
  4. 4

    A case of bacterial aneurysm that occurred in the external carotid artery by Oyanagi, Mayu, Sugawara, Takayuki, Seki, Hirohumi, Ogawa, Yoshikazu, Yagi, Takuya, Nozaki, Eiji, Ono, Sadahide, Higuti, Hiroshi

    Published in Nō shinkei geka (01-02-2006)
    “…Occurrence of a mycotic aneurysm extracranially is extremely rare. We report our experience with a case of mycotic aneurysm that occurred in the external…”
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    Journal Article
  5. 5

    Characterization of Thermal Oxides on 4H Silicon Carbide (4H-SiC) Epitaxial Substrate Using Fourier Transform Infrared Spectroscopy by Yoshikawa, Masanobu, Seki, Hirohumi, Inoue, Keiko, Kobayashi, Takuma, Kimoto, Tsunenobu

    Published in Applied spectroscopy (01-09-2015)
    “…We measured the Fourier transform infrared (FT-IR) spectra of thermal oxides with various thicknesses, grown thermally on 4H silicon carbide (4H-SiC)…”
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  6. 6

    Characterization of Silicon Dioxide Films on a 4H-SiC Si(0001) Face by Fourier Transform Infrared (FT-IR) Spectroscopy and Cathodoluminescence Spectroscopy by Yoshikawa, Masanobu, Seki, Hirohumi, Inoue, Keiko, Matsuda, Keiko, Tanahashi, Yusaku, Sako, Hideki, Nanen, Yuihiro, Kato, Muneharu, Kimoto, Tsunenobu

    Published in Applied spectroscopy (01-05-2011)
    “…We used Fourier transform infrared (FT-IR) spectroscopy to characterize silicon dioxide (SiO2) films on a 4H-SiC(0001) Si face. We found that the peak…”
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  7. 7

    Annealing Effect on Structural Defects in Low-Dose Separation-by-Implanted-Oxygen Wafers by Tamura, Masao, Ishimaru, Manabu, Hinode, Kenji, Tokiguchi, Katsumi, Seki, Hirohumi, Mori, Hirotaro

    Published in Japanese Journal of Applied Physics (01-10-2006)
    “…The annealing characteristics of low-dose separation-by-implanted-oxygen (SIMOX) (100) Si have been investigated by transmission electron microscopy (TEM)…”
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    Journal Article
  8. 8

    Behavior of Plasma Produced by a Long CO 2 -Laser Pulse in a Spindle-Cusp by Ogasawara, Munehiro, Seki, Hirohumi, Sekiguchi, Tadashi, Yaji, Tsuyoshi, Kohno, Tetsushi

    Published in Japanese Journal of Applied Physics (01-05-1986)
    “…A plasma was generated at the null-field center of a spindle-cusp magnetic container by using a high-power CO 2 -laser beam with a relatively long pulse…”
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  9. 9