Search Results - "Seit, W. W."

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  1. 1

    TSV-integrated surface electrode ion trap for scalable quantum information processing by Zhao, P., Likforman, J. P., Li, H. Y., Tao, J., Henner, T., Lim, Y. D., Seit, W. W., Tan, C. S., Guidoni, L.

    Published in Applied physics letters (22-03-2021)
    “…In this study, we report about the design, fabrication, and operation of a Cu-filled through-silicon via (TSV)-integrated ion trap. TSVs are placed directly…”
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    Journal Article
  2. 2

    Fan-Out Wafer Level Packaging Development Line by TC, Chai, Ho, David, SC, Chong, HY, Hsiao, Soh, Serine, Lim, Simon, PS, Sharon Lim, Wai, Eva, BL, Lau, WW, Seit, GK, Lau, TS, Phua, Lim, Keith, SH, Sharon Lim, YL, Ye

    “…With the slowing down of Moore's law, the semiconductor industry is increasingly looking to advanced packaging for achieving system scaling at packaging level…”
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    Conference Proceeding
  3. 3

    TSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing by Zhao, P, Likforman, J. -P, Li, H. Y, Tao, J, Henner, T, Lim, Y. D, Seit, W. W, Tan, C. S, Guidoni, Luca

    Published 04-01-2021
    “…In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical…”
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    Journal Article
  4. 4

    Functional surface ion traps on a 12-inch glass wafer for quantum applications by Tao, J, Likforman, J, Zhao, P, Li, H, Henner, T, Lim, Y, Seit, W, Guidoni, Luca, Tan, C

    Published 26-02-2020
    “…We report large-scale fabrication of perfectly functional radio frequency (RF) surface ion traps on a 12-inch glass substrate with a standard CMOS-compatible…”
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    Journal Article