Search Results - "Seit, W. W."
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TSV-integrated surface electrode ion trap for scalable quantum information processing
Published in Applied physics letters (22-03-2021)“…In this study, we report about the design, fabrication, and operation of a Cu-filled through-silicon via (TSV)-integrated ion trap. TSVs are placed directly…”
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Journal Article -
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Fan-Out Wafer Level Packaging Development Line
Published in 2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC) (02-12-2020)“…With the slowing down of Moore's law, the semiconductor industry is increasingly looking to advanced packaging for achieving system scaling at packaging level…”
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Conference Proceeding -
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TSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing
Published 04-01-2021“…In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical…”
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Journal Article -
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Functional surface ion traps on a 12-inch glass wafer for quantum applications
Published 26-02-2020“…We report large-scale fabrication of perfectly functional radio frequency (RF) surface ion traps on a 12-inch glass substrate with a standard CMOS-compatible…”
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Journal Article