Search Results - "Seisyan, R. P."
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Temperature-Dependent Total Absorption of Exciton Polaritons in Bulk Semiconductors
Published in Semiconductors (Woodbury, N.Y.) (01-04-2020)“…This paper highlights the temperature factor in the experimental study of total absorption as a method for experimental validation and the study of the…”
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2
Tamm plasmon polaritons: Slow and spatially compact light
Published in Applied physics letters (23-06-2008)“…We report on the first experimental observation of Tamm plasmon polaritons (TPPs) formed at the interface between a metal and a dielectric Bragg reflector…”
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3
Features of SiO2 Layers Synthesized on Silicon by Molecular Layer Deposition
Published in Semiconductors (Woodbury, N.Y.) (01-04-2020)“…The characteristics of silicon-oxide layers deposited by various technological methods are compared. It is shown that the catalytic method for obtaining…”
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4
Scattering of an exciton polariton by impurity centers in GaAs
Published in Journal of experimental and theoretical physics (01-04-2017)“…Scattering of an exciton polariton by impurity centers at low temperatures has not been investigated comprehensively in spite of its significant role in…”
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5
Effect of a Coulomb well in (In, Ga)As/GaAs quantum wells
Published in Physics of the solid state (01-06-2017)“…Magnetooptical investigation of exciton transitions in high-quality quantum wells of an (In, Ga)As/GaAs heterosystem has been carried out. Investigation of…”
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6
Diffusive Propagation of Exciton-Polaritons through Thin Crystal Slabs
Published in Scientific reports (19-06-2015)“…If light beam propagates through matter containing point impurity centers, the amount of energy absorbed by the media is expected to be either independent of…”
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7
Absorption of the laser radiation by the laser plasma with gas microjet targets
Published in Technical physics letters (2017)“…An upper limit of absorption of the laser radiation in the plasma produced in a gas jet Xe target with the average density of (3–6) × 10 18 cm –3 and the…”
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8
Extreme Ultraviolet Nanolithography for ULSI: A Review
Published in Technical physics (2005)Get full text
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Nanolithography in microelectronics: A review
Published in Technical physics (01-08-2011)“…The current status of basic photolithographic techniques allowing researchers to achieve results that seemed to be unrealistic even a short time ago is…”
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Effects of spatial dispersion in the temperature dependence of the optical absorption in ZnSe heteroepitaxial layers and CdTe and ZnTe crystals
Published in Journal of crystal growth (01-02-1996)“…The absorption-edge spectra have been studied in the temperature range from 4 to 300 K for single-crystals of CdTe, ZnTe and heteroepitaxial layers of ZnSe. In…”
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Tamm plasmon-polaritons: First experimental observation
Published in Superlattices and microstructures (2010)“…We report on the first experimental observation of Tamm plasmon-polaritons (TPP) formed at the interface between a metal and a dielectric Bragg reflector…”
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12
Diamagnetic excitons in semiconductors (Review)
Published in Physics of the solid state (01-05-2016)“…Optical properties of semiconductor crystals in the presence of a high magnetic field have been considered. The field turn-on gives rise to oscillations of the…”
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13
Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection
Published in Applied physics letters (13-03-2006)“…Carrier dynamics in quantum dot p-i-n diodes are studied using an ultrafast polarization-resolved pump-probe technique. It is demonstrated that for bipolar…”
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14
The effect of a “Coulomb well” on the absorption and magnetoabsorption spectra of strained InGaAs/GaAs heterostructures
Published in Semiconductors (Woodbury, N.Y.) (01-09-1997)Get full text
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15
Spectroscopy of Excitonic Polaritons in Strained II–VI Semiconductor Structures with Wide Quantum Wells
Published in Semiconductors (Woodbury, N.Y.) (01-01-2004)Get full text
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16
Features of SiO.sub.2 Layers Synthesized on Silicon by Molecular Layer Deposition
Published in Semiconductors (Woodbury, N.Y.) (01-04-2020)“…The characteristics of silicon-oxide layers deposited by various technological methods are compared. It is shown that the catalytic method for obtaining…”
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Journal Article -
17
Optical transmittance of thin GaAs wafers upon laser pumping in the region of exciton resonances and the continuum of states: Exciton-exciton interaction
Published in Semiconductors (Woodbury, N.Y.) (01-05-2014)“…The transmittance spectra of thin “pure” GaAs bulk wafers upon optical pumping corresponding to the band of the ground state of the exciton series are recorded…”
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18
Temperature-dependent integral exciton absorption in semiconducting InP crystals
Published in Technical physics letters (01-02-2012)“…The temperature dependence of the fundamental absorption edge in free-standing “epitaxial” InP layers has been experimentally studied. The integral exciton…”
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Journal Article -
19
Temperature-dependent integral exciton absorption in semiconducting GaAs crystals
Published in Technical physics letters (01-10-2012)“…This Letter is devoted to an experimental investigation of the temperature dependence of the fundamental absorption edge of thin GaAs layers grown by molecular…”
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20
Photoablation of thin indium oxide films under the action of a pulsed arf excimer laser
Published in Technical physics letters (01-03-2002)Get full text
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