Analysis of plasma oscillations in high-electron mobility transistorlike structures: Distributed circuit approach

We develop simple distributed circuit model of the high-electron mobility transistor (HEMT)-like structure for the analysis of the effects associated with plasma oscillations excited in its two-dimensional electron gas (2DEG) channel. Circuit components of the model are related to physical and geome...

Full description

Saved in:

Bibliographic Details
Published in:	Applied physics letters Vol. 91; no. 14; pp. 143515 - 143515-3
Main Authors:	Khmyrova, I., Seijyou, Yu
Format:	Journal Article
Language:	English
Published:	United States American Institute of Physics 01-10-2007
Subjects:	70 PLASMA PHYSICS AND FUSION TECHNOLOGY ELECTRIC POTENTIAL ELECTRON GAS ELECTRON MOBILITY EVALUATION EXCITATION INDUCTANCE OPTIMIZATION PLASMA WAVES TRANSISTORS TWO-DIMENSIONAL CALCULATIONS
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	We develop simple distributed circuit model of the high-electron mobility transistor (HEMT)-like structure for the analysis of the effects associated with plasma oscillations excited in its two-dimensional electron gas (2DEG) channel. Circuit components of the model are related to physical and geometrical parameters of the structure. Developed model accounts for dependence of resistance and inductance of 2DEG channel gated region on gate voltage. Such an approach facilitates and improves understanding of HEMT-like structures' behavior in the regime of excitation of plasma oscillation and is applicable for their performance evaluation and optimization as well.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.2794772