Search Results - "Seifertová, A."

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  1. 1

    Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth by Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., Kuzmik, J.

    Published in Applied physics letters (06-01-2014)
    “…We discuss possibilities of adjustment of a threshold voltage VT in normally off GaN high-electron mobility transistors (HEMTs) without compromising a maximal…”
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    Journal Article
  2. 2

    Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs by Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., Kuzmík, J.

    Published in Applied surface science (30-10-2020)
    “…[Display omitted] •Normally-off devices prepared by polarization engineering using InGaN layer.•Polarization charge at the InGaN/AlGaN interface confirmed by…”
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    Journal Article
  3. 3

    Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al{sub 2}O{sub 3} atomic layer deposition overgrowth by Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Kuzmik, J., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M.

    Published in Applied physics letters (06-01-2014)
    “…We discuss possibilities of adjustment of a threshold voltage V{sub T} in normally off GaN high-electron mobility transistors (HEMTs) without compromising a…”
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    Journal Article
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    Affinity chromatography of proteases of hydroxyalkyl methacrylate gels with covalently attached inhibitors by Turková, J

    Published in Journal of chromatography (21-01-1978)
    “…The efficient isolation of trypsin and chymotrypsin from a crude pancreatic extract was achieved by affinity chromatography on specific adsorbents prepared by…”
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