Search Results - "Seifert, Winfried"
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Grain boundary segregation in multicrystalline silicon: correlative characterization by EBSD, EBIC, and atom probe tomography
Published in Progress in photovoltaics (01-12-2015)“…This study aims to better understand the influence of crystallographic structure and impurity decoration on the recombination activity at grain boundaries in…”
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Journal Article -
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Out-diffusion and precipitation of copper in silicon: An electrostatic model
Published in Physical review letters (04-12-2000)“…Concentrations of mobile interstitial copper and precipitated copper in silicon were studied after a high temperature intentional contamination and quench to…”
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Journal Article -
3
Formation of copper precipitates in silicon
Published in Physica. B, Condensed matter (01-12-1999)“…The formation of copper precipitates in silicon was studied after high-temperature intentional contamination of p- and n-type FZ and Cz-grown silicon and…”
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Grain boundary characterization in multicrystalline silicon using joint EBSD, EBIC, and atom probe tomography
Published in 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) (01-06-2014)“…The efficiency of multicrystalline silicon solar cells suffers from the presence of extended defects like dislocations and grain boundaries. In fact, the…”
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Conference Proceeding -
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Infrared light emission from porous silicon
Published in Journal of materials science. Materials in electronics (01-12-2008)“…Very intense broad sub-bandgap infrared (IR) light emission around 1,550 nm was observed on porous silicon by photoluminescence (PL) measurements. The…”
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Journal Article Conference Proceeding -
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Micro-photoluminescence spectroscopy on metal precipitates in silicon
Published in Physica status solidi. PSS-RRL. Rapid research letters (01-10-2009)“…Metallic impurities are detrimental to many silicon devices and limit the efficiency of multicrystalline silicon solar cells. Therefore they are a major…”
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The effect of internal stresses on the recombination activity of structural defects in multi-crystalline solar silicon
Published in 2011 37th IEEE Photovoltaic Specialists Conference (01-06-2011)“…Internal stresses in multi-crystalline silicon (mc-Si) materials for solar cells are the result of the superposition between the thermally induced residual…”
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Conference Proceeding -
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Influence of contamination on the electrical activity of crystal defects in silicon
Published in Microelectronic engineering (01-04-2003)“…It is shown by EBIC that dislocation activity is controlled by the degree of metal contamination. The activity can be affected by external gettering and…”
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Journal Article Conference Proceeding -
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Influence of Intrinsic Gettering on Silicon Recombination Properties and their Relation to Device Performance
Published in ESSDERC '87: 17th European Solid State Device Research Conference (01-09-1987)Get full text
Conference Proceeding