Search Results - "Seidleck, Christina M"

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  1. 1

    32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches by Rodbell, K. P., Heidel, D. F., Pellish, J. A., Marshall, P. W., Tang, H. H. K., Murray, C. E., LaBel, K. A., Gordon, M. S., Stawiasz, K. G., Schwank, J. R., Berg, M. D., Kim, H. S., Friendlich, M. R., Phan, A. M., Seidleck, C. M.

    Published in IEEE transactions on nuclear science (01-12-2011)
    “…Single event upset (SEU) experimental heavy ion data and modeling results for CMOS, silicon-on-insulator (SOI), 32 nm and 45 nm stacked and DICE latches are…”
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    Journal Article
  2. 2

    Single-Event Response of 22-nm Fully Depleted Silicon-on-Insulator Static Random Access Memory by Casey, Megan C., Stansberry, Scott D., Seidleck, Christina M., Maharrey, Jeffrey A., Gamboa, Dante, Pellish, Jonathan A., Label, Kenneth A.

    Published in IEEE transactions on nuclear science (01-04-2021)
    “…We are presenting single-event effect testing results on a 22-nm fully depleted silicon-on-insulator test chip from GlobalFoundries. The 128-Mb static random…”
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    Journal Article
  3. 3

    Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions by Sierawski, B.D., Pellish, J.A., Reed, R.A., Schrimpf, R.D., Warren, K.M., Weller, R.A., Mendenhall, M.H., Black, J.D., Tipton, A.D., Xapsos, M.A., Baumann, R.C., Xiaowei Deng, Campola, M.J., Friendlich, M.R., Kim, H.S., Phan, A.M., Seidleck, C.M.

    Published in IEEE transactions on nuclear science (01-12-2009)
    “…Direct ionization from low energy protons is shown to cause upsets in a 65-nm bulk CMOS SRAM, consistent with results reported for other deep submicron…”
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    Journal Article
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    Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs by Tipton, A.D., Pellish, J.A., Hutson, J.M., Baumann, R., Deng, X., Marshall, A., Xapsos, M.A., Kim, H.S., Friendlich, M.R., Campola, M.J., Seidleck, C.M., LaBel, K.A., Mendenhall, M.H., Reed, R.A., Schrimpf, R.D., Weller, R.A., Black, J.D.

    Published in IEEE transactions on nuclear science (01-12-2008)
    “…The effects of device orientation on heavy ion-induced multiple-bit upset (MBU) in 65 nm SRAMs are examined. The MBU response is shown to depend on the…”
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    Journal Article
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    Enhancing Observability of Signal Composition and Error Signatures During Dynamic SEE Analog to Digital Device Testing by Berg, M D, Buchner, S P, Hak Kim, Friendlich, M, Perez, C, Phan, A M, Seidleck, C M, Label, K A, Kruckmeyer, K

    Published in IEEE transactions on nuclear science (01-08-2010)
    “…A novel approach to dynamic SEE ADC testing is presented. The benefits of this test scheme versus prior implemented techniques include the ability to observe…”
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    Journal Article
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    Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM by Heidel, D.F., Marshall, P.W., LaBel, K.A., Schwank, J.R., Rodbell, K.P., Hakey, M.C., Berg, M.D., Dodd, P.E., Friendlich, M.R., Phan, A.D., Seidleck, C.M., Shaneyfelt, M.R., Xapsos, M.A.

    Published in IEEE transactions on nuclear science (01-12-2008)
    “…Experimental results are presented on proton induced single-event-upsets (SEU) on a 65 nm silicon-on-insulator (SOI) SRAM. The low energy proton SEU results…”
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    Journal Article
  9. 9

    SEE data from the APEX Cosmic Ray Upset experiment: predicting the performance of commercial devices in space by Adolphsen, J., Barth, J.L., Stassinopoulos, E.G., Gruner, T., Wennersten, M., LaBel, K.A., Seidleck, C.M.

    Published in IEEE transactions on nuclear science (01-06-1996)
    “…This paper presents additional results from the CRUX experiment on the US Air Force APEX satellite. The experiment monitors single event effects on 256 Kbit…”
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    Journal Article
  10. 10

    Single Event Induced Multiple Bit Errors and the Effects of Logic Masking by Berg, Melanie D., Kim, Hak S., Phan, Anthony D., Seidlick, Christina M., LaBel, Kenneth A., Pellish, Jonathan A.

    Published in IEEE transactions on nuclear science (01-12-2013)
    “…We apply a model and heavy-ion cross section data to predict the potential that one single event upset (SEU) will induce multiple bit errors (MBEs) by the next…”
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    Journal Article
  11. 11

    Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM by Heidel, D.F., Marshall, P.W., Pellish, J.A., Rodbell, K.P., LaBel, K.A., Schwank, J.R., Rauch, S.E., Hakey, M.C., Berg, M.D., Castaneda, C.M., Dodd, P.E., Friendlich, M.R., Phan, A.D., Seidleck, C.M., Shaneyfelt, M.R., Xapsos, M.A.

    Published in IEEE transactions on nuclear science (01-12-2009)
    “…Experimental results are presented on single-bit-upsets (SBU) and multiple-bit-upsets (MBU) on a 45 nm SOI SRAM. The accelerated testing results show the…”
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    Journal Article
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    Proton-induced transients in optocouplers: in-flight anomalies, ground irradiation test, mitigation and implications by LaBel, K.A., Marshall, P.W., Marshall, C.J., D'Ordine, M., Carts, M., Lum, G., Kim, H.S., Seidleck, C.M., Powell, T., Abbott, R., Barth, J., Stassinopoulos, E.G.

    Published in IEEE transactions on nuclear science (01-12-1997)
    “…We present data on recent optocoupler in-flight anomalies and the subsequent ground test irradiation performed. Discussions of the single event mechanisms…”
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    Journal Article
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    Comparison of MIL-STD-1773 fiber optic data bus terminals: single event proton test irradiation, in-flight space performance, and prediction techniques by LaBel, K.A., Marshall, P.W., Marshall, C.J., Barth, J., Leidecker, H., Reed, R., Seidleck, C.M.

    Published in IEEE transactions on nuclear science (01-06-1998)
    “…We present a comparison of proton single event ground test results for two generations of MTL-STD-1773 fiber optic data bus interface modules. Single event…”
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    Journal Article
  17. 17

    Single event upset rates on 1 Mbit and 256 Kbit memories: CRUX experiment on APEX by Adolphsen, J., Barth, J.L., Stassinopoulos, E.G., Gruner, T., Wennersten, M., LaBel, K.A., Seidleck, C.M.

    Published in IEEE transactions on nuclear science (01-12-1995)
    “…This paper presents the results from the CRUX experiment on the Air Force APEX satellite. The experiment monitors single event upsets on screened commercial…”
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    Journal Article
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    Recent single event effects results for candidate spacecraft electronics for NASA by O'Bryan, M.V., LaBel, K.A., Kniffin, S.D., Poivey, C., Howard, J.W., Ladbury, R.L., Buchner, S.P., Oldham, T.R., Marshall, P.W., Sanders, A.B., Kim, H.S., Hawkins, D.K., Carts, M.A., Forney, J.D., Irwin, T., Seidleck, C.M., Cox, S.R., Palor, C., Petrick, D., Powell, W., Willits, B.L.

    “…Vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects is studied. Devices tested include digital,…”
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    Conference Proceeding
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    Implications of single event effect characterization of hybrid DC-DC converters and a solid state power controller by LaBel, K.A., Barry, R.K., Castell, K., Kim, H.S., Seidleck, C.M.

    Published in IEEE transactions on nuclear science (01-12-1995)
    “…As part of National Aeronautics and Space Administration (NASA)/Goddard Space Flight Center's (GSFC) efforts in supporting spaceflight qualification for…”
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    Journal Article
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    On the suitability of fiber optic data links in the space radiation environment: a historical and scaling technology perspective by LaBel, K.A., Marshall, C.J., Marshall, P.W., Luers, P.J., Reed, R.A., Ott, M.N., Seidleck, C.M., Andrucyk, D.J.

    “…As NASA, DoD, industry, and others propagate the current spacecraft trends for increasing science data throughput and on-board processing, the use of fiber…”
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    Conference Proceeding