Search Results - "Seguini, G."

Electronic properties at the oxide interface with silicon and germanium through x-ray induced oxide charging by Perego, M, Molle, A, Seguini, G

“…A dependence of the binding energy of the Hf 4f and O 1s photoemission lines on the thickness of the HfO2 film is identified in HfO2/Si heterojunctions and…”
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Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon by Seguini, G., Castro, C., Schamm-Chardon, S., BenAssayag, G., Pellegrino, P., Perego, M.

“…Si nanocrystals (NCs) embedded in a SiO2 matrix provide an exemplar curved nanostructured interface to evidence the competition between surface states and…”
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The energy band alignment of Si nanocrystals in SiO2 by Seguini, G., Schamm-Chardon, S., Pellegrino, P., Perego, M.

“…The determination of the energy band alignment between the 2.6-nm-diameter Si nanocrystals and the SiO2 host is achieved by means of…”
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High Aspect Ratio PS‑b‑PMMA Block Copolymer Masks for Lithographic Applications by Ferrarese Lupi, F, Giammaria, T. J, Volpe, F. G, Lotto, F, Seguini, G, Pivac, B, Laus, M, Perego, M

“…The control of the self-assembly (SA) process and nanostructure orientation in diblock copolymer (DBC) thick films is a crucial technological issue…”
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Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide by Mastromatteo, M., Arduca, E., Napolitani, E., Nicotra, G., De Salvador, D., Bacci, L., Frascaroli, J., Seguini, G., Scuderi, M., Impellizzeri, G., Spinella, C., Perego, M., Carnera, A.

“…The interest toward the doping of semiconductor nanostructures has been increasing steadily, but a clear understanding must still be reached, due to…”
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Conduction band offset of HfO2 on GaAs by Seguini, G., Perego, M., Spiga, S., Fanciulli, M., Dimoulas, A.

“…A detailed analysis of the band alignment between molecular beam deposited amorphous HfO2 and GaAs is reported. The conduction band offset, measured by…”
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Atomic layer deposited TiO2 for implantable brain-chip interfacing devices by Cianci, E., Lattanzio, S., Seguini, G., S.Vassanelli, Fanciulli, M.

“…In this paper we investigated atomic layer deposition (ALD) TiO2 thin films deposited on implantable neuro-chips based on electrolyte-oxide-semiconductor (EOS)…”
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Surface passivation for ultrathin Al2O3 layers grown at low temperature by thermal atomic layer deposition by Frascaroli, J., Seguini, G., Cianci, E., Saynova, D., van Roosmalen, J., Perego, M.

“…Thin layers of Al2O3 with thickness tox ≤ 8 nm were grown by thermal atomic layer deposition at low temperature of 100 °C and applied to achieve functional…”
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Energy-band diagram of metal/Lu2O3/silicon structures by Seguini, G., Bonera, E., Spiga, S., Scarel, G., Fanciulli, M.

“…Internal photoemission spectroscopy has been used to determine the band alignment in Lu2O3 based metal-oxide-semiconductor structures. The Si/Lu2O3 interface…”
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Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge by Spiga, S., Wiemer, C., Tallarida, G., Scarel, G., Ferrari, S., Seguini, G., Fanciulli, M.

“…We report on the growth by atomic layer deposition of HfO2 films on HF-last treated Ge(001) substrates using HfCl4 as a Hf source and either O3 or H2O as…”
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X-ray photoelectron spectroscopy study of energy-band alignments of Lu2O3 on Ge by Perego, M., Seguini, G., Scarel, G., Fanciulli, M.

“…X‐ray photoelectron spectroscopy (XPS) was used to investigate the band alignment of lutetium oxide films with a germanium substrate. Lu2O3 films were grown on…”
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XPS and IPE analysis of HfO2 band alignment with high-mobility semiconductors by PEREGO, M, SEGUINI, G, FANCIULLI, M

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Si surface passivation by Al2O3 thin films deposited using a low thermal budget atomic layer deposition process by Seguini, G., Cianci, E., Wiemer, C., Saynova, D., van Roosmalen, J. A. M., Perego, M.

“…High-quality surface passivation of crystalline Si is achieved using 10 nm thick Al2O3 films fabricated by thermal atomic layer deposition at 100 °C. After a 5…”
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The energy band alignment of Si nanocrystals in SiO 2 by Seguini, G., Schamm-Chardon, S., Pellegrino, P., Perego, M.

“…The determination of the energy band alignment between the 2.6-nm-diameter Si nanocrystals and the SiO 2 host is achieved by means of…”
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Surface passivation for ultrathin Al 2 O 3 layers grown at low temperature by thermal atomic layer deposition by Frascaroli, J., Seguini, G., Cianci, E., Saynova, D., van Roosmalen, J., Perego, M.

“…Abstract Thin layers of Al 2 O 3 with thickness t ox  ≤ 8 nm were grown by thermal atomic layer deposition at low temperature of 100 °C and applied to achieve…”
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Surface passivation for ultrathin Al sub(2)O sub(3) layers grown at low temperature by thermal atomic layer deposition by Frascaroli, J, Seguini, G, Cianci, E, Saynova, D, van Roosmalen, J, Perego, M

“…Thin layers of Al sub(2)O sub(3) with thickness t sub(ox) less than or equal to 8nm were grown by thermal atomic layer deposition at low temperature of 100…”
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Conduction band offset of Hf O 2 on GaAs by Seguini, G., Perego, M., Spiga, S., Fanciulli, M., Dimoulas, A.

“…A detailed analysis of the band alignment between molecular beam deposited amorphous Hf O 2 and GaAs is reported. The conduction band offset, measured by…”
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XPS and IPE analysis of HfO sub(2 band alignment with high-mobility semiconductors) by Perego, M, Seguini, G, Fanciulli, M

“…A detailed analysis of the band alignment between atomic-layer deposition (ALD)-grown HfO sub(2 thin films and n-type Ge(1 0 0) substrate is presented. The…”
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Band alignment at the La2Hf2O7∕(001)Si interface by Seguini, G., Spiga, S., Bonera, E., Fanciulli, M., Reyes Huamantinco, A., Först, C. J., Ashman, C. R., Blöchl, P. E., Dimoulas, A., Mavrou, G.

“…In the perspective of exploring alternative gate dielectrics for the future generation of microelectronic devices, we investigated experimentally and…”
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XPS and IPE analysis of HfO 2 band alignment with high-mobility semiconductors by Perego, M., Seguini, G., Fanciulli, M.

“…A detailed analysis of the band alignment between atomic-layer deposition (ALD)-grown HfO 2 thin films and n-type Ge(1 0 0) substrate is presented. The valence…”
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