Search Results - "Seaung-Suk Lee"

Modeling of [Formula Omitted] Shift in nand Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects by Jung, Sang-Goo, Lee, Keun-Woo, Kim, Ki-Seog, Shin, Seung-Woo, Lee, Seaung-Suk, Om, Jae-Chul, Bae, Gi-Hyun, Lee, Jong-Ho

“…A threshold-voltage (V sub(th)) shift of sub-100-nm NAND flash-memory cell transistors was modeled systematically, and the modeling was verified by comparing…”
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Extraction of Energy Distribution of Nitride Traps Using Charge Pumping Method in Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory by Choi, Won-Ho, Park, Sung-Soo, Choi, Kwang-Il, Nam, Dong-Ho, Kwon, Hyuk-Min, Han, In-Shik, Park, Byung-Seok, Om, Jae-Chul, Lee, Seaung-Suk, Joo, Han-Soo, Lee, Hi-Deok, Lee, Ga-Won

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New Charge Pumping Method for Characterization of Charge Trapping Layer in Oxide–Nitride–Oxide Structure by Choi, Won-Ho, Park, Sung-Soo, Han, In-Shik, Om, Jae-Chul, Lee, Seaung-Suk, Bae, Gi-Hyun, Lee, Hi-Deok, Lee, Ga-Won

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Modeling of Vth Shift in NAND Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects by JUNG, Sang-Goo, LEE, Keun-Woo, KIM, Ki-Seog, SHIN, Seung-Woo, LEE, Seaung-Suk, OM, Jae-Chul, BAE, Gi-Hyun, LEE, Jong-Ho

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Imprint Characteristics of Ferroelectric Thin Films at Elevated Storage and Operation Temperatures by Noh, Keum Hwan, Kang, Young Min, Yang, Beelyong, Lee, Seok Won, Lee, Seaung-Suk, Park, Young-Jin

“…The imprint characteristics of SrBi2Ta2O9 (SBT) and Bi4-xLaxTi3O12 (BLT) thin films have been studied at elevated storage and operation temperatures for the…”
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A hierarchy bitline boost scheme for sub-1.5 V operation and short precharge time on high density FeRAM by Kang, Hee-Bok, Kye, Hun-Woo, Lee, Geun-Il, Park, Je-Hoon, Kim, Jung-Hwan, Lee, Seaung-Suk, Hong, Suk-Kyoung, Park, Young-Jin, Chung, Jin-Yong

“…This work develops three concepts: low-voltage operation with boost voltage control of bitline and plateline, reduced bitline capacitance with multiple divided…”
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Issues and Reliability of High-Density FeRAMs by Noh, Keum Hwan, Yang, Beelyong, Lee, Seok Won, Lee, Seaung-Suk, Kang, Hee-Bok, Park, Young-Jin

“…Authors discuss technical issues on the realization of high-density ferroelectric random access memory (FeRAM). Due to reliability concerns of ferroelectric…”
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Highly reliable 26nm 64Gb MLC E2NAND (Embedded-ECC & Enhanced-efficiency) flash memory with MSP (Memory Signal Processing) controller by Hyunyoung Shim, Seaung-Suk Lee, Byungkook Kim, Namjae Lee, Doyoung Kim, Hankyum Kim, Byungkeun Ahn, Youngho Hwang, Hoseok Lee, Jumsoo Kim, Youngbok Lee, Heeyoul Lee, Juyeab Lee, Seungho Chang, Joongseob Yang, Sungkye Park, Aritome, S., Seokkiu Lee, Kun-Ok Ahn, Gihyun Bae, Yeseok Yang

“…A highly reliable 26nm 64GB MLC E2NAND (E2: Embedded-ECC & Enhanced-efficiency) flash memory has been successfully developed. To overcome scaling challenges,…”
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Modeling of V Shift in nand Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects by Jung, Sang-Goo, Lee, Keun-Woo, Kim, Ki-Seog, Shin, Seung-Woo, Lee, Seaung-Suk, Om, Jae-Chul, Bae, Gi-Hyun, Lee, Jong-Ho

“…A threshold-voltage (V th ) shift of sub-100-nm NAND flash-memory cell transistors was modeled systematically, and the modeling was verified by comparing with…”
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Preparation of (Pb088La0.12)TiO3 thin films for dynamic random access memory by low pressure-metalorganic chemical vapor deposition by Lee, Seaung-Suk, Kim, Ho-Gi

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Effect of annealing conditions on the microstructure of RuO2 thin films deposited by metalorganic chemical vapor deposition by Shin, Woong-Chul, Yoon, Soon-Gil, Lee, Seaung-Suk

“…Ruthenium dioxide thin films were deposited on SiO 2 /Si substrate at low temperatures by hot-wall metalorganic chemical vapor deposition using the ruthenocene…”
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Characterization of SrBi2Ta2O9 ferroelectric thin films deposited at low temperatures by plasma-enhanced metalorganic chemical vapor deposition by Seong, Nak-Jin, Yoon, Soon-Gil, Lee, Seaung-Suk

“…Ferroelectric bismuth-layer SrBi2Ta2O9(SBT) thin films were prepared on Pt/Ti/SiO2/Si substrate by plasma-enhanced metalorganic chemical vapor deposition. The…”
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A CELL MODEL FOR NON-VOLATILE RANDOM ACCESS MEMORY AND A SUBSEQUENT METHOD FOR INCREASING DENSITY by JEONG, HYEOK-JE, NOH, KEUM-HWAN, LEE, SEAUNG-SUK, HONG, SUK-KYOUNG, KANG, JONG-HO, PARK, KUN-WOO

“…A cell model for non-volatile random access memory (RAM) is suggested in this study. An indicator, a cell, was introduced to simplify the explanation. If the…”
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Characterization of Low Frequency Noise in Floating Gate NAND Flash Memory by Sung-Ho Bae, Jeong-Hyun Lee, Jong-Ho Lee, Hyuck-In Kwon, Seaung-Suk Lee, Jae-Chul Om, Gi-Hyun Bae

“…We have characterized the low frequency noise (LFN) in the NAND flash memory string, for the first time, and shown its fundamental properties. As a result, the…”
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Modeling and Characterization of Program / Erasure Speed and Retention of TiN-gate MANOS (Si-Oxide-SiNx-Al2O3-Metal Gate) Cells for NAND Flash Memory by Eun-Seok Choi, Hyun-Seung Yoo, Kyoung-Hwan Park, Se-Jun Kim, Jung-Ryul Ahn, Myung-Shik Lee, Young-Ok Hong, Suk-Goo Kim, Jae-Chul Om, Moon-Sig Joo, Seung-Ho Pyi, Seaung-Suk Lee, Seok-Kiu Lee, Gi-Hyun Bae

“…In this study, physical properties of different trapping nitrides were extracted, and the program efficiency of MANOS cell was explained. We also showed…”
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FERROELECTRIC MEMORIES USING RANDOMLY ORIENTED (Bi1-xLax)4Ti3O12 FILMS by Yang, B, Lee, S S, Kang, Y M, Noh, K H, Lee, S W, Kim, N K, Kweon, S Y

“…Authors report on superior reliabilities at high temperature of ferroelectric memories using [Bi1-xLax]4Ti3O12 (BLT) films, which are randomly oriented by…”
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Imprint Characteristics of Bi-Layered Perovskite Ferroelectric Thin Films by Lee, Seaung-Suk, Noh, Keum-Hwan

“…The imprint characteristics of SrBi 2 Ta 2 O 9 , SBT, and (Bi 0.8 La 0.2 ) 4 Ti 3 O 12 , BLT, thin film capacitors have been evaluated at the storage…”
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Characterization of Hynix 16M Feram Adopted Novel Sensing Scheme by Lee, Seaung-Suk, Noh, Keum-Hwan, Kang, Hee-Bok, Hong, Suk-Kyoung, Yeom, Seung-Jin, Park, Young-Jin

“…16M FeRAM was successfully developed using a (Bi 1 − X La X ) 4 Ti 3 O 12 , BLT, film with excellent imprint characteristic as a ferroelectric film to decrease…”
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CHARACTERIZATION OF POLARIZATION SWITCHING BEHAVIOR OF Pt/SrBi2Ta2O9/Pt FERROELECTRIC CAPACITORS IN FERROELECTRIC RANDOM ACCESS MEMORY by Kang, Y M, Chung, C H, Oh, S H, Yang, B, Lee, S S, Hong, S K, Kang, N S

“…Authors investigated on the polarization switching behavior of Pt/SrBi2Ta2O9/Pt ferroelectric capacitors for ferroelectric random access memory (FeRAM)…”
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A Current-Gain Scheme for High Density and Low Voltage FeRAM by Kang, Hee-Bok, Kim, Sung-Sik, Jeong, Dong-Yun, Lim, Jae-Hyoung, Yeom, Seung-Jin, Lee, Seaung-Suk, Lee, Kye-Nam, Hong, Suk-Kyoung, Cho, Kyoung-Rok, Park, Young-Jin

“…The proposed current-gain scheme provides a key technical solution for a high density, low cost and high performance ferroelectric random access memory. The…”
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