Search Results - "Sealy, B."

Optically active erbium centers in silicon by Przybylinska, H, Jantsch, W, Suprun-Belevitch, Y, Stepikhova, M, Palmetshofer, L, Hendorfer, G, Kozanecki, A, Wilson, RJ, Sealy, BJ

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On artefacts in the secondary ion mass spectrometry profiling of high fluence H + implants in GaAs by Bailey, M.J., Jeynes, C., Sealy, B.J., Webb, R.P., Gwilliam, R.M.

“…High fluence (>10 17 H/cm 2) ion implantation of H in GaAs is suitable for the ion cut process, and produces H bubbles under the surface which may cause…”
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Modeling of high-current source-gated transistors in amorphous silicon by Balon, F., Shannon, J. M., Sealy, B. J.

“…Compared with the field-effect transistor, the source-gated transistor has a much lower saturation voltage and higher output impedance. These features are…”
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Electron field emission properties of Co quantum dots in SiO2 matrix synthesised by ion implantation by Tsang, W M, Stolojan, V, Sealy, B J, Wong, S P, Silva, S R P

“…In this work, Co ions were implanted into thermally oxidised SiO2 layers on silicon substrates. The implantation energy was 50 keV and the doses were 1, 3, 5…”
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Enhanced n-type dopant solubility in tensile-strained Si by Bennett, N.S., Radamson, H.H., Beer, C.S., Smith, A.J., Gwilliam, R.M., Cowern, N.E.B., Sealy, B.J.

“…The creation of highly conductive ultrashallow-doped regions in strained Si is a key requirement for future Si based devices. It is shown that in the presence…”
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Differential Hall profiling of ultra-shallow junctions in Si and SOI by Bennett, N.S., Smith, A.J., Colombeau, B., Gwilliam, R., Cowern, N.E.B., Sealy, B.J.

“…Determining the electrical characteristics of doped layers is a key challenge in understanding the success of the ion implantation and an anneal process. Hall…”
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Implantation induced electrical isolation of sulphur doped GaNxAs1−x layers by Ahmed, S., Lin, J., Haq, A., Sealy, B.

“…The study of III-N-V semiconductor alloys, especially GaNxAs1−x has been increasing in the last few years. The strong dependence of the band gap on the…”
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Implant isolation of plasma-assisted MBE grown GaInAsN for opto-telecommunication applications by Ahmed, S., Lin, J., Haq, A., Sealy, B.

“…The material system GaInAsN is considered to be one of the key materials for next generation telecommunication applications providing high data transmission…”
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Suppression of boron interstitial clusters in SOI using vacancy engineering by Smith, A.J., Colombeau, B., Gwilliam, R., Cowern, N.E.B., Sealy, B.J., Milosavljevic, M., Collart, E., Gennaro, S., Bersani, M., Barozzi, M.

“…As CMOS devices scale into the 45 nm process window, the requirements for the individual devices become even more stringent, with levels of activation well…”
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Structural and electrical characterisation of ion-implanted strained silicon by Horan, K., Lankinen, A., O’Reilly, L., Bennett, N.S., McNally, P.J., Sealy, B.J., Cowern, N.E.B., Tuomi, T.O.

“…The production of low resistance ultra-shallow junctions for e.g. source/drain extensions using low energy ion-implantation will be required for future CMOS…”
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Differential Hall characterisation of ultrashallow doping in advanced Si-based materials by Bennett, N.S., Cowern, N.E.B., Smith, A.J., Kah, M., Gwilliam, R.M., Sealy, B.J., Noakes, T.C.Q., Bailey, P., Giubertoni, D., Bersani, M.

“…Strained Si channels are commonly used by manufacturers to enhance CMOS performance and research into novel channel materials (SiGe and Ge) is well underway…”
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Low-temperature processing of antimony-implanted silicon by ALZANKI, T, GWILLIAM, R, EMERSON, N. G, SEALY, B. J

“…It is shown for the first time that antimony-implanted silicon produces the highest electrical activation (90%) with low resistivity (<200 ohms/square)…”
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Raman scattering studies of ultrashallow Sb implants in strained Si by O’Reilly, L., Bennett, N. S., McNally, P. J., Sealy, B. J., Cowern, N. E. B., Lankinen, A., Tuomi, T. O.

“…Sheet resistance ( R s ) reductions are presented for antimony doped layers in strained Si. We use micro-Raman spectroscopy to characterise the impact of a low…”
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Constraints on micro-Raman strain metrology for highly doped strained Si materials by O’Reilly, L., Horan, K., McNally, P. J., Bennett, N. S., Cowern, N. E. B., Lankinen, A., Sealy, B. J., Gwilliam, R. M., Noakes, T. C. Q., Bailey, P.

“…Ultraviolet (UV), low penetration depth, micro-Raman spectroscopy, and high-resolution x-ray diffraction (HRXRD) are utilized as complementary, independent…”
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The electron field emission properties of ion beam synthesised metal-dielectric nanocomposite layers on silicon substrates by Tsang, W.M., Stolojan, V., Wong, S.P., Sealy, B.J., Silva, S.R.P.

“…The search for cold electron field emission materials, with low threshold fields, compatible with existing integrated circuit fabrication has continued to…”
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Effect of proton implantation at variable temperatures and doses on the semi-insulating GaAs by Ahmed, S., Sealy, B.J., Gwilliam, R.

“…The effects of proton irradiation on the electrical properties of semi-insulating gallium arsenide (GaAs) have been investigated to establish if deleterious…”
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Annealing characteristics of the implant-isolated n-type GaAs layers: Effects of ion species and implant temperature by Ahmed, S., Sealy, B.J., Gwilliam, R.

“…The evolution of sheet resistivity with the annealing temperature for implant-isolated n-type GaAs layers has been studied for a variety of ion species…”
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Electrical characterization of Fe-doped semi-insulating InP after helium bombardment at different implant temperatures by Too, P., Ahmed, S., Sealy, B. J., Gwilliam, R.

“…The effect of helium ion bombardment into semi-insulating (SI) InP at room temperature (RT) and 200 °C has been investigated with various ion doses in the…”
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The influence of the ion implantation temperature and the dose rate on smart-cut© in GaAs by Webb, M., Jeynes, C., Gwilliam, R., Too, P., Kozanecki, A., Domagala, J., Royle, A., Sealy, B.

“…The temperature and dose rate dependence of the smart-cut© process in GaAs have been investigated in this paper. The distribution of hydrogen and the…”
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Evaluation of BBr2+ and B++Br+ implants in silicon by Sharp, J.A., Gwilliam, R.M., Sealy, B.J., Jeynes, C., Hamilton, J.J., Kirkby, K.J.

“…The work carried out here examines the suitability of BBr2+ and B+ + Br+ implants into crystalline (100) silicon for ultra-shallow junctions (USJ applications…”
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