Search Results - "Sealy, B J"

Modeling of high-current source-gated transistors in amorphous silicon by Balon, F., Shannon, J. M., Sealy, B. J.

“…Compared with the field-effect transistor, the source-gated transistor has a much lower saturation voltage and higher output impedance. These features are…”
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Differential Hall profiling of ultra-shallow junctions in Si and SOI by Bennett, N.S., Smith, A.J., Colombeau, B., Gwilliam, R., Cowern, N.E.B., Sealy, B.J.

“…Determining the electrical characteristics of doped layers is a key challenge in understanding the success of the ion implantation and an anneal process. Hall…”
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Raman scattering studies of ultrashallow Sb implants in strained Si by O’Reilly, L., Bennett, N. S., McNally, P. J., Sealy, B. J., Cowern, N. E. B., Lankinen, A., Tuomi, T. O.

“…Sheet resistance ( R s ) reductions are presented for antimony doped layers in strained Si. We use micro-Raman spectroscopy to characterise the impact of a low…”
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Low-temperature processing of antimony-implanted silicon by ALZANKI, T, GWILLIAM, R, EMERSON, N. G, SEALY, B. J

“…It is shown for the first time that antimony-implanted silicon produces the highest electrical activation (90%) with low resistivity (<200 ohms/square)…”
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Suppression of boron interstitial clusters in SOI using vacancy engineering by Smith, A.J., Colombeau, B., Gwilliam, R., Cowern, N.E.B., Sealy, B.J., Milosavljevic, M., Collart, E., Gennaro, S., Bersani, M., Barozzi, M.

“…As CMOS devices scale into the 45 nm process window, the requirements for the individual devices become even more stringent, with levels of activation well…”
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Electrical characterization of Fe-doped semi-insulating InP after helium bombardment at different implant temperatures by Too, P., Ahmed, S., Sealy, B. J., Gwilliam, R.

“…The effect of helium ion bombardment into semi-insulating (SI) InP at room temperature (RT) and 200 °C has been investigated with various ion doses in the…”
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The electron field emission properties of ion beam synthesised metal-dielectric nanocomposite layers on silicon substrates by Tsang, W.M., Stolojan, V., Wong, S.P., Sealy, B.J., Silva, S.R.P.

“…The search for cold electron field emission materials, with low threshold fields, compatible with existing integrated circuit fabrication has continued to…”
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Effect of proton implantation at variable temperatures and doses on the semi-insulating GaAs by Ahmed, S., Sealy, B.J., Gwilliam, R.

“…The effects of proton irradiation on the electrical properties of semi-insulating gallium arsenide (GaAs) have been investigated to establish if deleterious…”
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Annealing characteristics of the implant-isolated n-type GaAs layers: Effects of ion species and implant temperature by Ahmed, S., Sealy, B.J., Gwilliam, R.

“…The evolution of sheet resistivity with the annealing temperature for implant-isolated n-type GaAs layers has been studied for a variety of ion species…”
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Evaluation of BBr2+ and B++Br+ implants in silicon by Sharp, J.A., Gwilliam, R.M., Sealy, B.J., Jeynes, C., Hamilton, J.J., Kirkby, K.J.

“…The work carried out here examines the suitability of BBr2+ and B+ + Br+ implants into crystalline (100) silicon for ultra-shallow junctions (USJ applications…”
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Indium clustering in a silicon matrix in the presence of carbon co-implantation by Gennaro, S., Collart, E., Wang, Y., Sealy, B.J., Gwilliam, R.M.

“…Implantation of indium in silicon has attracted great interest for its possible applications in the microelectronics industry to produce ultra-shallow doped…”
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Ion beam synthesis of low resistivity contacts in amorphous silicon-based materials by EMERSON, N. G, GWILLIAM, R. M, SEALY, B. J

“…Low resistivity layers have been formed at low process temperatures, by high dose Co+ ion implantation in to hydrogenated amorphous silicon (a-Si:H) and…”
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The microstructural dependence of the opto-electronic properties of nitrogenated hydrogenated amorphous carbon thin films by SILVA, S. R. P, KHAN, R. U. A, BURDEN, A. P, ANGUITA, J. V, SHANNON, J. M, SEALY, B. J, PAPWORTH, A. J, KIELY, C. J, AMARATUNGA, G. A. J

“…The microstructural properties of nitrogenated hydrogenated amorphous carbon (a-C:H:N) thin films deposited using a chemical vapour deposition system are…”
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Characteristics of rare-earth element erbium implanted in silicon by TANG, Y. S, HEASMAN, K. C, GILLIN, W. P, SEALY, B. J

“…Rare-earth element erbium implanted into silicon was studied by photoluminescence and Rutherford backscattering analysis. Two sets of luminescent bands related…”
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Constraints on micro-Raman strain metrology for highly doped strained Si materials by O’Reilly, L., Horan, K., McNally, P. J., Bennett, N. S., Cowern, N. E. B., Lankinen, A., Sealy, B. J., Gwilliam, R. M., Noakes, T. C. Q., Bailey, P.

“…Ultraviolet (UV), low penetration depth, micro-Raman spectroscopy, and high-resolution x-ray diffraction (HRXRD) are utilized as complementary, independent…”
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On artefacts in the secondary ion mass spectrometry profiling of high fluence H + implants in GaAs by Bailey, M.J., Jeynes, C., Sealy, B.J., Webb, R.P., Gwilliam, R.M.

“…High fluence (>10 17 H/cm 2) ion implantation of H in GaAs is suitable for the ion cut process, and produces H bubbles under the surface which may cause…”
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Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2 by Pi, X.D., Coleman, P.G., Harding, R., Davies, G., Gwilliam, R.M., Sealy, B.J.

“…Positron annihilation spectroscopy has been employed to study changes in the interface region between nanocrystalline Si and SiO2, following annealing between…”
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Electron field emission properties of Co quantum dots in SiO2 matrix synthesised by ion implantation by Tsang, W M, Stolojan, V, Sealy, B J, Wong, S P, Silva, S R P

“…In this work, Co ions were implanted into thermally oxidised SiO2 layers on silicon substrates. The implantation energy was 50 keV and the doses were 1, 3, 5…”
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Excitation of Er3+ ions in silicon dioxide films thermally grown on silicon by Kozanecki, A., Stepikhova, M., Lanzerstorfer, S., Jantsch, W., Palmetshofer, L., Sealy, B. J., Jeynes, C.

“…We investigate photoluminescence (PL) and photoluminescence excitation spectroscopy of Er3+ ions implanted into SiO2 films thermally grown on silicon wafers…”
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Thin amorphous gallium nitride films formed by ion beam synthesis by Silva, S.R.P., Almeida, S.A., Sealy, B.J.

“…Ion implantation and plasma enhanced chemical vapour deposition (PECVD) have been used to synthesise an amorphous gallium nitride compound (a-GaN) within an…”
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