High Q-Factor Low Band SAW Filter Based on High Performance POI Substrate

Piezoelectric-on-Insulator wafers based on the combination of single-crystal piezoelectric, oxide and Silicon represent a unique solution to address 5G and next generation 6G surface acoustic wave filter challenges. This paper is particularly discussing the use of POI for sub-GHz applications. The s...

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Bibliographic Details
Published in:	2024 IEEE MTT-S International Conference on Microwave Acoustics & Mechanics (IC-MAM) pp. 125 - 128
Main Authors:	Seah, Xavier, Ballandras, Sylvain, Courjon, Emilie, Bernard, Florent, Clairet, Alexandre, Makdissy, Tony, Laroche, Thierry, Aspar, Gabrielle, Michoulier, Eric, Ndiaye, Saly, Raveski, Alexandre, Chappaz, Cedrick, Hilt, Thierry, Alami-Idrissi, Aziz, Achatz, Philipp, Rolland, Laure, Didier, Christophe, Allibert, Frederic, Drouin, Alexis, Huyet, Isabelle
Format:	Conference Proceeding
Language:	English
Published:	IEEE 13-05-2024
Subjects:	characterization Figures-of-Merit Piezoelectric-on-Insulator - POI Q-factor SAW filters Signal processing Silicon sub-GHz Surface acoustic waves Surface Acoustic Waves - SAW Temperature distribution Temperature measurement
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Summary:	Piezoelectric-on-Insulator wafers based on the combination of single-crystal piezoelectric, oxide and Silicon represent a unique solution to address 5G and next generation 6G surface acoustic wave filter challenges. This paper is particularly discussing the use of POI for sub-GHz applications. The stack is adapted to provide optimal SAW properties required to meet the corresponding signal processing specifications. Figures of Merit are reported for different configurations, demonstrating the performance of the approach and the actual capability of SAW-on-POI to provide high quality filters for frequency bands ranging from 500 MHz to 1.0 GHz.
DOI:	10.1109/IC-MAM60575.2024.10538490