Search Results - "Seabaugh, A. C."

A unique photoemission method to measure semiconductor heterojunction band offsets by Zhang, Q., Li, R., Yan, R., Kosel, T., Xing, H. G., Seabaugh, A. C., Xu, K., Kirillov, O. A., Gundlach, D. J., Richter, C. A., Nguyen, N. V.

“…We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under…”
Get full text

Direct extraction of the electron tunneling effective mass in ultrathin SiO2 by Brar, B., Wilk, G. D., Seabaugh, A. C.

“…Electron transport in ultrathin (tox<40 Å) Al/SiO2/n−Si structures is dominated by direct tunneling of electrons across the SiO2 barrier. By analyzing the…”
Get full text

Resolution enhancement of transmission electron microscopy by super-resolution radial fluctuations by Zhang, Y., Rouvimov, S., Yuan, X., Gonzalez-Serrano, K., Seabaugh, A. C., Howard, S. S.

“…Super-resolution fluorescence microscopy techniques have enabled dramatic development in modern biology due to their capability to discern features smaller…”
Get full text

Batch-Fabricated WSe₂-on-Sapphire Field-Effect Transistors Grown by Chemical Vapor Deposition by Asghari Heidarlou, M., Paletti, P., Jariwala, B., Robinson, J. A., Fullerton-Shirey, S. K., Seabaugh, A. C.

“…Stepper-based batch fabrication of top-gated field-effect transistors (FETs) is demonstrated on few-layer WSe 2 -on-sapphire grown by chemical vapor…”
Get full text

RTD/HFET low standby power SRAM gain cell by van der Wagt, J.P.A., Seabaugh, A.C., Beam, E.A.

“…A 50-nW standby power compound semiconductor tunneling-based static random access memory SRAM (TSRAM) cell is demonstrated by combining ultralow…”
Get full text

Epitaxial Si-based tunnel diodes by Thompson, P.E, Hobart, K.D, Twigg, M.E, Rommel, S.L, Jin, N, Berger, P.R, Lake, R, Seabaugh, A.C, Chi, P.H, Simons, D.S

“…Tunneling devices in combination with transistors offer a way to extend the performance of existing technologies by increasing circuit speed and decreasing…”
Get full text

Realization of a three-terminal resonant tunneling device: the bipolar quantum resonant tunneling transistor by REED, M. A, FRENSLEY, W. R, MATYI, R. J, RANDALL, J. N, SEABAUGH, A. C

“…A new three-terminal resonant tunneling structure in which current transport is controlled by directly modulating the potential of the quantum well is proposed…”
Get full text

A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter by Broekaert, T.P.E., Brar, B., van der Wagt, J.P.A., Seabaugh, A.C., Morris, F.J., Moise, T.S., Beam, E.A., Frazier, G.A.

“…The combination of resonant-tunneling diodes and heterostructure field-effect transistors provides a versatile technology for implementing microwave digital…”
Get full text

Resonant transmission in the base/collector junction of a bipolar quantum-well resonant-tunneling transistor by Seabaugh, A. C., Kao, Y.-C., Frensley, W. R., Randall, J. N., Reed, M. A.

“…A new transistor effect is demonstrated in a 120 nm base, bipolar quantum-well, resonant-tunneling transistor (BiQuaRTT). In this BiQuaRTT, a strong, multiple…”
Get full text

Room-temperature operation of a tunneling hot-electron transfer amplifier by Moise, T. S., Kao, Y.-C., Seabaugh, A. C.

“…We demonstrate a tunneling hot-electron transfer amplifier that exhibits both dc and rf current gain at room temperature. The measured peak common-emitter…”
Get full text

Nanoprobe-induced electrostatic lateral quantization in near-surface resonant-tunneling heterostructures by Taylor, M. D., Wetsel, G. C., McBride, S. E., Brown, R. C., Frensley, W. R., Seabaugh, A. C., Kao, Y.-C., Beam, E. A.

“…We report experimental and theoretical evidence for electrostatic lateral confinement induced by a nanoprobe. The lateral confinement is manifest as…”
Get full text

Observation of resonant tunneling at room temperature in GaInP/GaAs/GaInP double-heterojunction bipolar transistor by Liu, W., Seabaugh, A.C., Henderson, T.S., Yuksel, A., Beam, E.A., Fan, S.

“…Negative differential resistance (NDR) has been observed at room temperature in GaInP/GaAs double-heterojunction bipolar transistors (DHBTs). Both the…”
Get full text

Integration of resonant-tunneling transistors and hot-electron transistors by Moise, T.S., Yung-Chung Kao, Seabaugh, A.C., Taddiken, A.H.

“…We have integrated a tunneling hot-electron transfer amplifier (THETA) and a novel resonant-tunneling hot-electron transfer amplifier (RTHETA) within a single…”
Get full text

Room-temperature operation of a resonant-tunneling hot-electron transistor based integrated circuit by Moise, T.S., Seabaugh, A.C., Beam, E.A., Randall, J.N.

“…The first resonant-tunneling hot-electron transistor (RHET) EXCLUSIVE-NOR integrated circuit that operates at room temperature is demonstrated. The XNOR…”
Get full text

Nine-state resonant tunneling diode memory by Seabaugh, A.C., Kao, Y.-C., Yuan, H.-T.

“…The authors demonstrate an epitaxial series combination of eight pseudomorphic AlAs/In/sub 0.53/Ga/sub 0.47/As/InAs resonant tunneling diodes (RTDs) grown by…”
Get full text

Pseudomorphic bipolar quantum resonant-tunneling transistor by Seabaugh, A.C., Frensley, W.R., Randall, J.N., Reed, M.A., Farrington, D.L., Matyi, R.J.

“…A bipolar tunneling transistor in which ohmic contact is made to the strained p/sup +/ InGaAs quantum well of a double-barrier resonant-tunneling structure is…”
Get full text

Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing by Dashiell, M.W., Troeger, R.T., Rommel, S.L., Adam, T.N., Berger, P.R., Guedj, C., Kolodzey, J., Seabaugh, A.C., Lake, R.

“…We present the characteristics of uniformly doped silicon Esaki tunnel diodes grown by low temperature molecular beam epitaxy (T/sub growth/=275/spl deg/C)…”
Get full text

Irradiation effects in InGaAs/InAlAs high electron mobility transistors by Jackson, E. M., Weaver, B. D., Shojah-Ardalan, S., Wilkins, R., Seabaugh, A. C., Brar, B.

“…The radiation tolerance of high electron mobility transistors (HEMTs) based on InGaAs/InAlAs lattice matched to InP has been studied. At low fluences of 3 MeV…”
Get full text

Formation of rotation-induced superlattices and their observation by tunneling spectroscopy by SEABAUGH, A. C, KAO, Y.-C, LIU, H.-Y, LUSCOMBE, J. H, TSAI, H.-L, REED, M. A, FRENSLEY, W. R

“…We show that superlattices can be formed in the ternary and quaternary In(GaAl)As alloys on InP by molecular beam epitaxy without mechanical shuttering…”
Get full text

Electrochemical C-V profiling of heterojunction device structures by Seabaugh, A.C., Frensley, W.R., Matyi, R.J., Cabaniss, G.E.

“…Electrochemical capacitance-voltage profiles of multiple (In,Al) GaAs heterostructures have been measured and compared with the results of a numerical…”
Get full text