Search Results - "Scofield, J.D."

Power Device Packaging Technologies for Extreme Environments by Johnson, R.W., Cai Wang, Yi Liu, Scofield, J.D.

“…Silicon carbide is a wide-bandgap semiconductor capable of operation at temperatures in excess of 300degC. However, high-temperature packaging to interface…”
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Effect of trimethylsilane flow rate on the growth of SiC thin-films for fiber-optic temperature sensors by Lin Cheng, Steckl, A.J., Scofield, J.D.

“…We have investigated the effect of trimethylsilane ([(CH/sub 3/)/sub 3/SiH] or 3MS) flow rate on the growth of SiC thin-film on single-crystal sapphire…”
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High temperature operation of a dc-dc power converter utilizing SiC power devices by Ray, B., Scofield, J.D., Spyker, R.L., Jordan, B., Sei-Hyung Ryu

“…Performance of a 2 kW, 40 kHz, 270 V/500 V boost dc-dc power converter as a function of temperature is reported for the following power semiconductor device…”
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Characteristics of High-Speed Silicon Carbide (Sic) Power Transistors by Asumadu, J.A., Scofield, J.D.

“…This paper describes the temperature and operating characteristics of NPN 4H-SiC (a polytype of silicon carbide) bipolar junction transistor (BJT) and 4H-SIC…”
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GaAs/Ge tandem-cell space concentrator development by Wojtczuk, S.J., Tobin, S.P., Keavney, C.J., Bajgar, C., Sanfacon, M.M., Geoffroy, L.M., Dixon, T.M., Vernon, S.M., Scofield, J.D., Ruby, D.S.

“…GaAs/Ge monolithic tandem two-junction concentrators are being developed by optimizing separate one-junction GaAs and Ge cells that simulate the GaAs top cell…”
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Study of the phase transformation of cobalt by Ray, A.E, Smith, S.R, Scofield, J.D

“…The allotropic transformation of cobalt was studied with a differential scanning calorimeter. The temperature of the fcc to hcp transformation, A sub s , and…”
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