Search Results - "Schwierz Frank"

Insulators for 2D nanoelectronics: the gap to bridge by Illarionov, Yury Yu, Knobloch, Theresia, Jech, Markus, Lanza, Mario, Akinwande, Deji, Vexler, Mikhail I., Mueller, Thomas, Lemme, Max C., Fiori, Gianluca, Schwierz, Frank, Grasser, Tibor

“…Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators…”
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Six Decades of Research on 2D Materials: Progress, Dead Ends, and New Horizons by Schwierz, Frank, Ziegler, Martin

“…The present paper guides the reader through six decades of research on 2D materials, thereby putting special focus on the use of these materials for electronic…”
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The Role of Vacancy Dynamics in Two‐Dimensional Memristive Devices by Spetzler, Benjamin, Abdel, Dilara, Schwierz, Frank, Ziegler, Martin, Farrell, Patricio

“…Two‐dimensional layered transition metal dichalcogenides (TMDCs) are promising memristive materials for neuromorphic computing systems. Despite extensive…”
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Graphene transistors by Schwierz, Frank

“…Graphene has changed from being the exclusive domain of condensed-matter physicists to being explored by those in the electron-device community. In particular,…”
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Graphene Transistors: Status, Prospects, and Problems by Schwierz, Frank

“…Graphene is a relatively new material with unique properties that holds promise for electronic applications. Since 2004, when the first graphene samples were…”
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RF transistors: Recent developments and roadmap toward terahertz applications by Schwierz, Frank, Liou, Juin J.

“…This paper provides an overview on the status, development and performance of current and future RF transistors. The targets specified in the 2005 issue and…”
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Empirical Model for the Effective Electron Mobility in Silicon Nanowires by Granzner, Ralf, Polyakov, Vladimir M., Schippel, Christian, Schwierz, Frank

“…An empirical model for the effective electron mobility in silicon nanowires (SiNWs) is presented. The model is based on published mobility data from numerical…”
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Epitaxial graphene three-terminal junctions by Göckeritz, Robert, Pezoldt, Jörg, Schwierz, Frank

“…We report on the fabrication and characterization of graphene three-terminal junctions with nanometer dimensions. The devices have been realized in epitaxial…”
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Quantum Effects on the Gate Capacitance of Trigate SOI MOSFETs by Granzner, R, Thiele, S, Schippel, C, Schwierz, F

“…Scaling effects on the gate capacitance of trigate MOS field-effect transistors are studied by means of analytical models and numerical self-consistent…”
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Electronics: industry-compatible graphene transistors by Schwierz, Frank

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High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers by Ture, Erdin, Bruckner, Peter, Godejohann, Birte-Julia, Aidam, Rolf, Alsharef, Mohamed, Granzner, Ralf, Schwierz, Frank, Quay, Rudiger, Ambacher, Oliver

“…Through implementation of the 3-D tri-gate topology, GaN-based high-electron mobility transistors (HEMTs) have been fabricated and high-frequency performances…”
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Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation by Maroldt, Stephan, Haupt, Christian, Pletschen, Wilfried, Müller, Stefan, Quay, Rüdiger, Ambacher, Oliver, Schippel, Christian, Schwierz, Frank

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Nanoelectronics Flat transistors get off the ground by Schwierz, Frank

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Performance Fluctuations in 10-nm Trigate Metal--Oxide--Semiconductor Field-Effect Transistors: Impact of the Channel Geometry by Granzner, Ralf, Schwierz, Frank, Engert, Sonja, Töpfer, Hannes

“…Off-current and threshold voltage fluctuations in trigate (TG), and single-gate (SG) silicon-on-insulator (SOI) MOSFETs with a gate length of 10 nm are studied…”
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Towards zero-power 6G communication switches using atomic sheets

“…A solid-state electronic switch based on an atomic sheet of molybdenum disulfide is demonstrated in the 6G communication band with very high speed data…”
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Boron nitride switches for 5G and beyond by Schwierz, Frank

“…Monolayers of boron nitride can be used to build high-performance radio-frequency switches that can operate at the frequencies required for 5G and the…”
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Graphene Transistors: Status, Prospects, and Problems: EMERGING GRAPHENE-BASED ELECTRONIC & PHOTONIC DEVICES, CIRCUITS, AND SYSTEMS by SCHWIERZ, Frank

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Trap-assisted tunnelling current in MIM structures by Racko Juraj, Mikolášek Miroslav, Granzner Ralf, Breza Juraj, Donoval Daniel, Grmanová Alena, Harmatha Ladislav, Schwierz Frank, Fröhlich Karol

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An electron mobility model for wurtzite GaN by Schwierz, Frank

“…A comprehensive model for the electron mobility in wurtzite (hexagonal) GaN is developed. A large number of experimental mobility data and the results of Monte…”
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Industry- compatible graphene transistors: an innovative technique has been developed to manufacture graphene transistors that operate at radio frequencies and low temperatures. The process brings the devices closer to applications by Schwierz, Frank

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