Search Results - "Schweitz, Michael A."

Morphological and Electrical Properties of β-Ga2O3/4H-SiC Heterojunction Diodes by Byun, Dong-Wook, Lee, Young-Jae, Oh, Jong-Min, Schweitz, Michael A., Koo, Sang-Mo

“…ß-Ga 2 O 3 /4H-SiC heterojunction diodes were fabricated by depositing β-Ga 2 O 3 thin films on 4H-SiC substrates using radio frequency sputtering. X-ray…”
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Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC by Kim, Dong-Hyeon, Schweitz, Michael A, Koo, Sang-Mo

“…It is shown in this work that annealing of Schottky barrier diodes (SBDs) in the form of Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and…”
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Analysis of deep level defects in nitrogen post-deposition annealed Ga2O3/SiC hetero-structured Schottky diodes grown by mist-CVD by Lee, Tae-Hee, Park, Se-Rim, Choi, Ji-Soo, Chung, Seung-Hwan, Kim, Min-Yeong, Lee, Geon-Hee, Cho, Seong-Ho, Bae, Si-Young, Kim, Il Ryong, Kim, Min Kyu, Lim, Byeong Cheol, Schweitz, Michael A., Koo, Sang-Mo

“…We investigated the electrical characterization and defect properties of Ga 2 O 3 /SiC hetero-structured Schottky diodes manufactured by mist chemical vapor…”
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Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes by Lee, Young-Jae, Schweitz, Michael A., Oh, Jong-Min, Koo, Sang-Mo

“…Ga2O3/4H-SiC n-n isotype heterojunction diodes were fabricated by depositing Ga2O3 thin films by RF magnetron sputtering. The influence of annealing atmosphere…”
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Effects of post-deposition annealing on BaTiO3/4H-SiC MOS capacitors using aerosol deposition method by Choi, Ji-Soo, Lee, Hyun-Woo, Lee, Tae-Hee, Park, Se-Rim, Chung, Seung-Hwan, Cho, Young-Hun, Lee, Geon-Hee, Schweitz, Michael A., Park, Chulhwan, Shin, Weon Ho, Oh, Jong-Min, Koo, Sang-Mo

“…High-k oxide materials for metal–oxide–semiconductor field-effect transistors and metal–oxide–semiconductor (MOS) structure on SiC have been explored to…”
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Influence of Gas Annealing on Sensitivity of AlN/4H-Sic-Based Temperature Sensors by Jung, Seung-Woo, Shin, Myeong-Cheol, Schweitz, Michael A, Oh, Jong-Min, Koo, Sang-Mo

“…In this study, the physical and electrical characteristics of an AlN/4H-SiC Schottky barrier diode-based temperature sensor annealed in various gas atmospheres…”
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Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter by Shin, Myeong-Cheol, Lee, Young-Jae, Kim, Dong-Hyeon, Jung, Seung-Woo, Schweitz, Michael A, Shin, Weon Ho, Oh, Jong-Min, Park, Chulhwan, Koo, Sang-Mo

“…In this study, static induction transistors (SITs) with beta gallium oxide (β-Ga O ) channels are grown on a p-epi silicon carbide (SiC) layer via radio…”
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Effect of Post Annealing on the Electrical Characteristics and Deep Level Defects of Ga2O3/SiC Heterojunction Diodes by Byun, Dong-Wook, Kim, Min-Yeong, Moon, Soo-Young, Shin, Myeong-Cheol, Schweitz, Michael. A, Koo, Sang-Mo

“…Ga 2 O 3 /SiC heterojunction were fabricated by RF magnetron sputtering. The influence of nitrogen atmosphere annealing on the electrical and deep level traps…”
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Improved Properties of Post-Deposition Annealed Ga2O3/SiC and Ga2O3/Al2O3/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering by Lee, Hee-Jae, Lee, Geon-Hee, Chung, Seung-Hwan, Byun, Dong-Wook, Schweitz, Michael A., Chun, Dae Hwan, Joo, Nack Yong, Lim, Minwho, Erlbacher, Tobias, Koo, Sang-Mo

“…The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga2O3 demonstrate…”
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Impact of annealing on material and electrical characteristics of lithium phosphate thin films on silicon carbide by Lee, Hyung-Jin, Moon, Soo-Young, Lee, Hee-Jae, Byun, Dong-Wook, Jung, Seung-Woo, Schweitz, Michael A., Kim, Minkyung, Oh, Jong-Min, Shin, Weon Ho, Park, Chulhwan, Koo, Sang-Mo

“…In this study, we investigated the influence of post-deposition annealing (PDA) process on lithium phosphate (Li3PO4) solid-state thin films on silicon carbide…”
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Modeling and investigation of the effect of annealing on the electrothermal properties of Ga2O3/SiC heterojunction diodes by Kim, Min-Yeong, Lee, Hee-Jae, Byun, Dong-Wook, Jung, Seung-Woo, Shin, Myeong-Cheol, Schweitz, Michael A., Koo, Sang-Mo

“…•Ga2O3 films were deposited on two SiC substrates by radio frequency sputtering.•Effect of annealing on electrothermal properties of Ga2O3 thin films…”
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Effect of nitrogen and oxygen annealing on (Al0.1Ga0.9)2O3/4H-SiC heterojunction diodes by Moon, Soo-Young, Jung, Seung-Woo, Lee, Hee-Jae, Byun, Dong-Wook, Shin, Myeong-Cheol, Schweitz, Michael A., Koo, Sang-Mo

“…•Comparison of as-grown (Al0.1Ga0.9) 3 sputtered films with ones annealed in N2 or O2.•The annealed films showed higher degree of crystallinity than the…”
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Bandgap modulation and electrical characteristics of (AlxGa1−x)2O3/4H-SiC thin film heterostructures by Lee, Hee-Jae, Shin, Myeong-Cheol, Moon, Soo-Young, Byun, Dong-Wook, Kim, Min-Yeong, Lee, Hyung-Jin, Lee, Geon-Hee, Jung, Seung-Woo, Schweitz, Michael A., Park, JoonHui, Rim, Youseung, Koo, Sang-Mo

“…•(AlxGa1−x)2O3 films were deposited on 4H-SiC substrates through RF sputtering.•The annealing temperature of 800 °C formed the crystalline structure…”
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Influence of Annealing Atmosphere on the Characteristics of Ga 2 O 3 /4H-SiC n-n Heterojunction Diodes by Lee, Young-Jae, Schweitz, Michael A, Oh, Jong-Min, Koo, Sang-Mo

“…Ga O /4H-SiC n-n isotype heterojunction diodes were fabricated by depositing Ga O thin films by RF magnetron sputtering. The influence of annealing atmosphere…”
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Influence of Metal on Schottky Barrier Inhomogeneity in Ga2O3 Schottky Barrier Diodes by Kim, Min-Yeong, Lee, Geon-Hee, Lee, Hee-Jae, Byun, Dong-Wook, Schweitz, Michael A., Koo, Sang-Mo

“…A systematic study of Schottky barriers fabricated on Ga 2 O 3 film is reported. The Schottky barrier heights (SBHs) and current transport mechanisms were…”
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