Search Results - "Schwank, James R."

Proton-Induced Upsets in SLC and MLC NAND Flash Memories by Bagatin, Marta, Gerardin, Simone, Paccagnella, Alessandro, Ferlet-Cavrois, Veronique, Schwank, James R., Shaneyfelt, Marty R., Visconti, Angelo

“…We investigate proton-induced upsets in state-of-the-art NAND Flash memories, down to the 25-nm node. The most striking result is the opposite behavior of…”
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32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches by Rodbell, K. P., Heidel, D. F., Pellish, J. A., Marshall, P. W., Tang, H. H. K., Murray, C. E., LaBel, K. A., Gordon, M. S., Stawiasz, K. G., Schwank, J. R., Berg, M. D., Kim, H. S., Friendlich, M. R., Phan, A. M., Seidleck, C. M.

“…Single event upset (SEU) experimental heavy ion data and modeling results for CMOS, silicon-on-insulator (SOI), 32 nm and 45 nm stacked and DICE latches are…”
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Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser Measurements by Schwank, J R, Shaneyfelt, M R, McMorrow, D, Ferlet-Cavrois, V, Dodd, P E, Heidel, D F, Marshall, P W, Pellish, J A, LaBel, K A, Rodbell, K P, Hakey, M, Flores, R S, Swanson, S E, Dalton, S M

“…The laser energy thresholds for SEU for SOI 1-Mbit SRAMs built in Sandia's 0.35-μm SOI technology were measured using carrier generation by two-photon…”
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Single-Event Upsets and Distributions in Radiation-Hardened CMOS Flip-Flop Logic Chains by Dodd, P. E., Shaneyfelt, M. R., Flores, R. S., Schwank, J. R., Hill, T. A., McMorrow, D., Vizkelethy, G., Swanson, S. E., Dalton, S. M.

“…Single-event upsets are studied in digital logic cells in a radiation-hardened CMOS SOI technology. The sensitivity of SEU to different strike locations and…”
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Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies by Pellish, Jonathan A., Marshall, Paul W., Rodbell, Kenneth P., Gordon, Michael S., LaBel, Kenneth A., Schwank, James R., Dodds, Nathaniel A., Castaneda, Carlos M., Berg, Melanie D., Kim, Hak S., Phan, Anthony M., Seidleck, Christina M.

“…We report low-energy proton and low-energy alpha particle SEE data on a 32 nm SOI CMOS SRAM that demonstrates the criticality of using low-energy protons for…”
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The Effects of Neutron Energy and High-Z Materials on Single Event Upsets and Multiple Cell Upsets by Clemens, M. A., Sierawski, B. D., Warren, K. M., Mendenhall, M. H., Dodds, N. A., Weller, R. A., Reed, R. A., Dodd, P. E., Shaneyfelt, M. R., Schwank, J. R., Wender, S. A., Baumann, R. C.

“…Neutron-induced charge collection data and computer simulations presented here show that the presence of high-Z materials, like tungsten, can increase the…”
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Influence of Beam Conditions and Energy for SEE Testing by Ferlet-Cavrois, Veronique, Schwank, James R., Liu, Sandra, Muschitiello, Michele, Beutier, Thierry, Javanainen, Arto, Hedlund, Alex, Poivey, Christian, Mohammadzadeh, Ali, Harboe-Sorensen, Reno, Santin, Giovanni, Nickson, Bob, Menicucci, Alessandra, Binois, Christian, Peyre, Daniel, Hoeffgen, Stefan Klaus, Metzger, Stefan, Schardt, Dieter, Kettunen, Heikki, Virtanen, Ari, Berger, Guy, Piquet, Bruno, Foy, Jean-Claude, Zafrani, Max, Truscott, Pete, Poizat, Marc, Bezerra, Francoise

“…The effects of heavy-ion test conditions and beam energy on device response are investigated. These effects are illustrated with two types of test vehicles:…”
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SEGR in SiO 2 -Si 3 N 4 Stacks by Javanainen, Arto, Ferlet-Cavrois, Véronique, Bosser, Alexandre, Jaatinen, Jukka, Kettunen, Heikki, Muschitiello, Michele, Pintacuda, Francesco, Rossi, Mikko, Schwank, James R., Shaneyfelt, Marty R., Virtanen, Ari

“…This paper presents experimental Single Event Gate Rupture (SEGR) data for Metal-Insulator-Semiconductor (MIS) devices, where the gate dielectrics are made of…”
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The Effect of High-Z Materials on Proton-Induced Charge Collection by Clemens, M A, Hooten, N C, Ramachandran, V, Dodds, N A, Weller, R A, Mendenhall, M H, Reed, R A, Dodd, P E, Shaneyfelt, M R, Schwank, J R, Blackmore, E W

“…Charge collection measurements reveal that the presence of high-Z materials increases proton-induced charge collection cross sections for high charge…”
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Hardness Assurance Testing for Proton Direct Ionization Effects by Schwank, J. R., Shaneyfelt, M. R., Ferlet-Cavrois, V., Dodd, P. E., Blackmore, E. W., Pellish, J. A., Rodbell, K. P., Heidel, D. F., Marshall, P. W., LaBel, K. A., Gouker, P. M., Tam, N., Wong, R., Shi-Jie Wen, Reed, R. A., Dalton, S. M., Swanson, S. E.

“…The potential for using the degraded beam of high-energy proton radiation sources for proton hardness assurance testing for ICs that are sensitive to proton…”
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SOI Substrate Removal for SEE Characterization: Techniques and Applications by Shaneyfelt, Marty R., Schwank, James R., Dodd, Paul E., Stevens, Jeffrey, Vizkelethy, Gyorgy, Swanson, Scot E., Dalton, Scott M.

“…Techniques for removing the back substrate of SOI devices are described for both packaged devices and devices at the die level. The use of these techniques for…”
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Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs-Methodology for Radiation Hardness Assurance by Ferlet-Cavrois, V., Binois, C., Carvalho, A., Ikeda, N., Inoue, M., Eisener, B., Gamerith, S., Chaumont, G., Pintacuda, F., Javanainen, A., Schwank, J. R., Shaneyfelt, M. R., Lauenstein, J-M, Ladbury, R. L., Muschitiello, M., Poivey, C., Mohammadzadeh, A.

“…A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide…”
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Total Ionizing Dose and Single Event Effects Hardness Assurance Qualification Issues for Microelectronics by Shaneyfelt, M.R., Schwank, J.R., Dodd, P.E., Felix, J.A.

“…The radiation effects community has developed a number of hardness assurance test guidelines to assess and assure the radiation hardness of integrated circuits…”
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Radiation Effects in 3D Integrated SOI SRAM Circuits by Gouker, P. M., Tyrrell, B., D'Onofrio, R., Wyatt, P., Soares, T., Weilin Hu, Chenson Chen, Schwank, J. R., Shaneyfelt, M. R., Blackmore, E. W., Delikat, K., Nelson, M., McMarr, P., Hughes, H., Ahlbin, J. R., Weeden-Wright, S., Schrimpf, R.

“…Radiation effects are presented for the first time for vertically integrated 3 × 64-kb SOI SRAM circuits fabricated using the 3D process developed at MIT…”
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Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs by Schwank, J. R., Shaneyfelt, M. R., Dodd, P. E., McMorrow, D., Warner, J. H., Ferlet-Cavrois, V., Gouker, P. M., Melinger, J. S., Pellish, J. A., Rodbell, K. P., Heidel, D. F., Marshall, P. W., LaBel, K. A., Swanson, S. E.

“…The laser pulse energy thresholds for single-event upset measured by single photon and two photon absorption are measured and compared for Sandia SRAMs and…”
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Direct Comparison of Charge Collection in SOI Devices From Single-Photon and Two-Photon Laser Testing Techniques by Schwank, J R, Shaneyfelt, M R, Dodd, P E, McMorrow, D, Vizkelethy, G, Ferlet-Cavrois, V, Gouker, P M, Flores, R S, Stevens, J, Buchner, S B, Dalton, S M, Swanson, S E

“…The amounts of charge collection by single-photon absorption (SPA) and by two-photon absorption (TPA) laser testing techniques have been directly compared…”
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Effects of Moisture on Radiation-Induced Degradation in CMOS SOI Transistors by Shaneyfelt, Marty R, Schwank, James R, Dodd, Paul E, Hill, Tom A, Dalton, Scott M, Swanson, Scot E

“…The effects of moisture on radiation-induced charge buildup in the oxides of a 0.35 μm SOI technology are explored. Data show no observable effects of…”
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Heavy Ion Testing With Iron at 1 GeV/amu by Pellish, Jonathan A, Xapsos, Michael A, LaBel, Kenneth A, Marshall, Paul W, Heidel, David F, Rodbell, Kenneth P, Hakey, Mark C, Dodd, Paul E, Shaneyfelt, Marty R, Schwank, James R, Baumann, Robert C, Xiaowei Deng, Marshall, Andrew, Sierawski, Brian D, Black, Jeffrey D, Reed, Robert A, Schrimpf, Ronald D, Kim, Hak S, Berg, Melanie D, Campola, Michael J, Friendlich, Mark R, Perez, Christopher E, Phan, Anthony M, Seidleck, Christina M

“…A 1 GeV/amu 56 Fe ion beam allows for true 90° tilt irradiations of various microelectronic components and reveals relevant upset trends at the GCR flux energy…”
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Implications of radiation-induced dopant deactivation for npn bipolar junction transistors by Witczak, S.C., Lacoe, R.C., Shaneyfelt, M.R., Mayer, D.C., Schwank, J.R., Winokur, P.S.

“…Metal-oxide-silicon capacitors fabricated in a bipolar process were examined for densities of oxide trapped charge, interface traps and deactivated substrate…”
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Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance by Schwank, J. R., Shaneyfelt, M. R., Dodd, P. E.

“…This document describes the radiation environments, physical mechanisms, and test philosophies that underpin radiation hardness assurance test methodologies…”
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