Search Results - "Schulze, T. F."

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  1. 1

    Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiOx:H, 0 < x < 2) by Liebhaber, M., Mews, M., Schulze, T. F., Korte, L., Rech, B., Lips, K.

    Published in Applied physics letters (19-01-2015)
    “…The heterojunction between amorphous silicon (sub)oxides (a-SiOx:H, 0 < x < 2) and crystalline silicon (c-Si) is investigated. We combine chemical vapor…”
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    Journal Article
  2. 2

    Electron-beam crystallized large grained silicon solar cell on glass substrate by Amkreutz, D., Müller, J., Schmidt, M., Hänel, T., Schulze, T. F.

    Published in Progress in photovoltaics (01-12-2011)
    “…ABSTRACT Thin film hetero‐emitter solar cells with large‐grained poly‐silicon absorbers of around 10 µm thickness have been prepared on glass. The basis of the…”
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    Journal Article
  3. 3

    High-forward-bias transport mechanism in a-Si:H/c-Si heterojunction solar cells by Schulze, T. F., Korte, L., Conrad, E., Schmidt, M., Rech, B.

    “…In order to elucidate the transport mechanism in a‐Si:H/c‐Si heterojunction solar cells under high forward bias (U > 0.5 V), we conducted temperature‐dependent…”
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    Journal Article Conference Proceeding
  4. 4

    Discerning passivation mechanisms at a-Si:H/c-Si interfaces by means of photoconductance measurements by Leendertz, C., Mingirulli, N., Schulze, T. F., Kleider, J. P., Rech, B., Korte, L.

    Published in Applied physics letters (16-05-2011)
    “…The photoconductance decay (PCD) measurement is a fast and simple method to characterize amorphous/crystalline (a-Si:H/c-Si) silicon interfaces for…”
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    Journal Article
  5. 5

    Atomic structure of interface states in silicon heterojunction solar cells by George, B M, Behrends, J, Schnegg, A, Schulze, T F, Fehr, M, Korte, L, Rech, B, Lips, K, Rohrmüller, M, Rauls, E, Schmidt, W G, Gerstmann, U

    Published in Physical review letters (29-03-2013)
    “…Combining orientation dependent electrically detected magnetic resonance and g tensor calculations based on density functional theory we assign microscopic…”
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    Journal Article
  6. 6

    Impact of a-Si:H hydrogen depth profiles on passivation properties in a-Si:H/c-Si heterojunctions by Schulze, T.F., Korte, L., Rech, B.

    Published in Thin solid films (30-04-2012)
    “…We explore the (near-)interface structure of amorphous/crystalline silicon (a-Si:H/c-Si) heterojunctions as employed in high-efficiency heterojunction solar…”
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    Journal Article
  7. 7

    Accelerated interface defect removal in amorphous/crystalline silicon heterostructures using pulsed annealing and microwave heating by Schulze, T. F., Beushausen, H. N., Hansmann, T., Korte, L., Rech, B.

    Published in Applied physics letters (02-11-2009)
    “…We present postdeposition annealing experiments on undoped amorphous-/n-type crystalline silicon [(i)a-Si:H/(n)c-Si/(i)a-Si:H] heterostructures used as…”
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    Journal Article
  8. 8

    Direct link between low-temperature magnetism and high-temperature sodium order in NaxCoO2 by Schulze, T F, Häfliger, P S, Niedermayer, Ch, Mattenberger, K, Bubenhofer, S, Batlogg, B

    Published in Physical review letters (18-01-2008)
    “…We prove the direct link between low-temperature (T) magnetism and high-T Na+ ordering in NaxCoO2 using the example of a so far unreported magnetic transition…”
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    Journal Article
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    Passivation of textured substrates for a-Si:H/ c-Si hetero-junction solar cells: Effect of wet-chemical smoothing and intrinsic a-Si:H interlayer by Angermann, H., Conrad, E., Korte, L., Rappich, J., Schulze, T.F., Schmidt, M.

    “…The effect of both wet-chemical smoothing and deposition of intrinsic a-Si:H buffer layer on electronic surface and interface properties was investigated for…”
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    Journal Article
  11. 11

    Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions by Schulze, T. F., Beushausen, H. N., Leendertz, C., Dobrich, A., Rech, B., Korte, L.

    Published in Applied physics letters (21-06-2010)
    “…We analyze the dependence of the interface defect density D it in amorphous/crystalline silicon (a-Si:H/c-Si) heterojunctions on the microscopic properties of…”
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    Journal Article
  12. 12

    Discerning passivation mechanisms at a -Si : H / c -Si interfaces by meansof photoconductance measurements by Leendertz, C., Mingirulli, N., Schulze, T. F., Kleider, J. P., Rech, B., Korte, L.

    Published in Applied physics letters (20-05-2011)
    “…The photoconductance decay (PCD) measurement is a fast and simple method to characterize amorphous/crystalline ( a -Si : H / c -Si ) silicon interfaces for…”
    Get full text
    Journal Article
  13. 13

    Direct link between low temperature magnetism and high temperature sodium order in NaxCoO2 by Schulze, T. F, Häfliger, P. S, Niedermayer, C, Mattenberger, K, Bubenhofer, S, Batlogg, B

    Published 22-11-2007
    “…We prove the direct link between low temperature magnetism and high temperature sodium ordering in NaxCoO2 using the example of a heretofore unreported…”
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    Journal Article
  14. 14

    Spin fluctuations, magnetic long-range order and Fermi surface gapping in NaxCoO2 by Schulze, T. F, Bruehwiler, M, Haefliger, P. S, Kazakov, S. M, Niedermayer, Ch, Mattenberger, K, Karpinski, J, Batlogg, B

    Published 12-08-2008
    “…In this study an extended low energy phase diagram for NaxCoO2 is experimentally established with emphasis on the high x range. It is based on systematic heat…”
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    Journal Article
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    Interdigitated Back-Contacted Silicon Heterojunction Solar Cells With Improved Fill Factor and Efficiency by Haschke, J., Mingirulli, N., Gogolin, R., Ferré, Rafel, Schulze, T. F., Düsterhöft, Jan, Harder, Nils-Peter, Korte, L.

    Published in IEEE journal of photovoltaics (01-10-2011)
    “…We compare recently reported results of efficient back-contacted amorphous/crystalline silicon heterojunction solar cells with fill factors up to 78.8% with…”
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    Journal Article
  17. 17

    EMIL: The energy materials in situ laboratory Berlin by Lips, K., Starr, D. E., Bar, M., Schulze, T. F., Fenske, F., Christiansen, S., van de Krol, R., Raoux, S., Reichardt, G., Schafers, F., Hendel, S., Follath, R., Bahrdt, J., Scheer, M., Wustefeld, G., Kuske, P., Havecker, M., Knop-Gericke, A., Schlogl, R., Rech, B.

    “…In a concerted effort, the Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB) and the Max Planck Society (MPG) will develop, install, and operate…”
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    Conference Proceeding
  18. 18

    Interdigitated back-contacted silicon heterojunction solar cells with improved fill-factor and efficiency by Mingirulli, N., Haschke, J., Gogolin, R., Ferre, R., Schulze, T. F., Dusterhoft, J., Harder, N., Korte, L.

    “…We present back-contacted amorphous/crystalline silicon heterojunction solar cells (IBC-SHJ) with a contact system leading to fill factors up to 78.8% and high…”
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    Conference Proceeding
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