Search Results - "Schrock, James A"

Failure Analysis of 1200-V/150-A SiC MOSFET Under Repetitive Pulsed Overcurrent Conditions by Schrock, James A., Pushpakaran, Bejoy N., Bilbao, Argenis V., Ray, William B., Hirsch, Emily A., Kelley, Mitchell D., Holt, Shad L., Bayne, Stephen B.

“…SiC MOSFETs are a leading option for increasing the power density of power electronics; however, for these devices to supersede the Si insulated-gate bipolar…”
Get full text

High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions by Schrock, James A., Ray, William B., Lawson, Kevin, Bilbao, Argenis, Bayne, Stephen B., Holt, Shad L., Lin Cheng, Palmour, John W., Scozzie, Charles

“…For SiC DMOSFETs to obtain widespread usage in power electronics their long-term operational ability to handle the stressful transient current and high…”
Get full text

Failure Modes of 15-kV SiC SGTO Thyristors During Repetitive Extreme Pulsed Overcurrent Conditions by Schrock, James A., Hirsch, Emily A., Lacouture, Shelby, Kelley, Mitchell D., Bilbao, Argenis V., Ray, William B., Bayne, Stephen B., Giesselmann, Michael, O'Brien, Heather, Ogunniyi, Aderinto

“…SiC SGTO thyristors are an advanced solution for increasing the power density of medium voltage power electronics. However, for these devices to replace Si…”
Get full text

Experiments on a Disk-on-Rod Traveling Wave Tube Amplifier Driven by a Nonlinear Transmission Line Modulated Electron Beam by Simon, David H., Hoff, Brad W., Schrock, James A., Beeson, Sterling, Tang, Wilkin, Lepell, Paul D., Montoya, Thomas, French, David M., Heidger, Susan L.

“…Experiments have demonstrated high-power amplification (100 MW class) from a traveling wave amplifier driven by a modulated electron beam. The modulated…”
Get full text

Nonlinear transmission line-driven apparatus for short-pulse microwave exposure of aerosolized pathogens by Enderich, Daniel A, Hoff, Brad W, Geiler, Michael, Geiler, Anton, Ottesen, Casey, Cohick, Zane W, McConaha, Jeremy W, Pohle, Hugh H, Franzi, Matthew A, Lepell, P David, Montoya, Thomas, Schrock, James A, Luginsland, John W, Revelli, David, Cox, Jason, Irshad, Hammad

“…A system capable of exposing a flowing aerosol stream to short duration (2-4 ns), high-power RF waveforms is described. The system utilizes a C-band…”
Get more information

Electron Bunching in a Nonlinear Transmission Line-Driven Electron Beam by Simon, David H., Hoff, Brad. W., Schrock, James A., Heidger, Susan L.

“…The nonlinear transmission line electron beam driver at the Air Force Research Laboratory produces a frequency agile modulated annular electron beam [1]. A…”
Get full text

Modular Marx generator for dV/dt testing of power semiconductor devices by Ray, William B., Schrock, James A., Lawson, Kevin, Bayne, Stephen B.

“…A solid-state modular Marx Generator was designed for the purpose of testing the dV/dt capability of Power Semiconductor devices. The Marx Generator is capable…”
Get full text

Single-pulse avalanche mode operation of 10-kV/10-A SiC MOSFET by Kelley, Mitchell D., Pushpakaran, Bejoy N., Bilbao, Argenis V., Schrock, James A., Bayne, Stephen B.

“…The high-voltage silicon carbide MOSFET is a state-of-the-art solution for increasing power density and efficiency in power electronics; nonetheless, a…”
Get full text

Spatially dispersive nonlinear transmission line experimental performance analysis by Schrock, James A., Hoff, Brad W., Simon, David H., Heidger, Susan L., Lepell, Paul, Gilbrech, Joshua, Wood, Haynes, Richter-Sand, Robert

“…Spatially dispersive nonlinear transmission lines (NLTLs) have attracted interest as pulsed RF sources. The characteristics of these sources need to be further…”
Get full text

Analysis of GaN power MOSFET exporsure to pulsed overcurrents by Ray, William B., Schrock, James A., Bilbao, Argenis V., Kelley, Mitchell, Lacouture, Shelby, Hirsch, Emily, Bayne, Stephen B.

“…The advancement of wide bandgap semiconductor materials has led to the development of Gallium Nitride (GaN) power semiconductor devices, specifically GaN Power…”
Get full text

Economic analysis of battery energy storage system by Ray, William B., Subburaj, Anitha S., Schrock, James A., Bayne, Stephen B.

“…Grid-connected battery energy storage systems (BESS) are essential for improving the transient dynamics of the power grid. There is ongoing research about how…”
Get full text

Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests by Bilbao, Argenis V., Schrock, James A., Ray, William B., Kelley, Mitchell D., Bayne, Stephen B.

“…The power density of pulsed power systems can be increased with the utilization of silicon carbide power devices 1 . With the latest developments in…”
Get full text

Evaluation and comparison of 1200-V/285-A silicon carbide half-bridge MOSFET modules by Kelley, Mitchell D., Bilbao, Argenis V., Ray, William B., Schrock, James A., Bayne, Stephen B.

“…Silicon Carbide (4H-SiC) is a state-of-the-art solution for increasing the energy density of pulsed power and power electronics. High power SiC MOSFET modules…”
Get full text

Pulsed power switching of 4H-SiC vertical D-MOSFET and device characterization by Bilbao, Argenis, Ray, William B., Schrock, James A., Bayne, Stephen B., Lin Cheng, Agarwal, Anant K., Scozzie, Charles

“…Summary form only given. This research is to characterize and compare CREE's new N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET with CREE's…”
Get full text

Analysis on repetitive pulsed overcurrent operation of GaN power transistors by Ray, William B., Kim, Matthew, Bilbao, Argenis, Schrock, James A., Bayne, Stephen B.

“…Gallium Nitride (GaN) transistors are of great interest for pulsed power and high power applications due to the proven capability of Silicon Carbide (SiC)…”
Get full text

Continuous switching of ultra-high voltage silicon carbide MOSFETs by Bilbao, Argenis V., Schrock, James A., Kelley, Mitchell D., Hirsch, Emilly, Ray, William B., Bayne, Stephen B., Giesselmann, Michael G.

“…Silicon carbide power semiconductor devices are capable of increasing the power density of power electronics systems [1, 2]. In recent years, devices rated to…”
Get full text

Simulation and design trade-off analysis of 15 kV SiC SGTO thyristor during extreme pulsed overcurrent conditions by Schrock, James A., Hirsch, Emily A., Bilbao, Argenis, Lacouture, Shelby, Ray, William, Bayne, Stephen, Giesselmann, Michael, Ogunniyi, Aderinto, O'Brien, Heather

“…Silicon carbide Super Gate Turn-Off (SGTO) thyristors are an advanced technology for increasing the power density of high voltage pulsed power or power…”
Get full text

Pulsed power switching of 4H-SiC vertical D-MOSFET and device characterization by Bilbao, Argenis, Ray, William B., Schrock, James A., Lawson, Kevin, Bayne, Stephen B., Lin Cheng, Agarwal, Anant K., Scozzie, Charles

“…The purpose of this research is to characterize and compare CREE's new N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET with CREE's previous…”
Get full text