Search Results - "Schrimpf, Ronald"

Radiation Effects in AlGaN/GaN HEMTs by Fleetwood, Daniel M., Zhang, En Xia, Schrimpf, Ronald D., Pantelides, Sokrates T.

“…An overview is presented of displacement damage (DD) effects, total-ionizing-dose (TID) effects, and single-event effects in AlGaN/GaN HEMTs. High-fluence…”
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Single-Event Burnout Mechanisms in SiC Power MOSFETs by Witulski, Arthur F., Ball, Dennis R., Galloway, Kenneth F., Javanainen, Arto, Lauenstein, Jean-Marie, Sternberg, Andrew L., Schrimpf, Ronald D.

“…Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show…”
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Low-Frequency Noise Due to Iron Impurity Centers in GaN-Based HEMTs by Fleetwood, Daniel M., Li, Xun, Zhang, En Xia, Schrimpf, Ronald D., Pantelides, Sokrates T.

“…Commercial Schottky-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) exhibit a large peak in low-frequency (LF) noise magnitude at <inline-formula>…”
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Influence of LDD Spacers and H+ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses by Faccio, Federico, Borghello, Giulio, Lerario, Edoardo, Fleetwood, Daniel M., Schrimpf, Ronald D., Huiqi Gong, En Xia Zhang, Wang, P., Michelis, Stefano, Gerardin, Simone, Paccagnella, Alessandro, Bonaldo, Stefano

“…The degradation induced by ultrahigh total ionizing dose in 65-nm MOS transistors is strongly gate-length dependent. The current drive decreases during…”
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Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices by Fleetwood, Daniel M., Zhang, En Xia, Schrimpf, Ronald D., Pantelides, Sokrates T., Bonaldo, Stefano

“…A re-evaluation of experimental results within the context of first-principles calculations strongly suggests that interface traps can contribute significantly…”
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The foundations of Shockley's equation for the average electron–hole-pair creation energy in semiconductors by Pantelides, Sokrates T., Walker, D. Greg, Reaz, Mahmud, Fischetti, Massimo V., Schrimpf, Ronald D.

“…Energetic carriers in semiconductors thermalize by impact-ionization, which generates electron–hole pairs (EHPs), and by energy losses to phonons. The average…”
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Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs by Bonaldo, Stefano, Zhang, En Xia, Mattiazzo, Serena, Paccagnella, Alessandro, Gerardin, Simone, Schrimpf, Ronald D., Fleetwood, Daniel M.

“…Total-ionizing-dose (TID) effects in AlGaN/GaN high-electron-mobility transistors (HEMTs) are evaluated by dc and low-frequency noise measurements. Devices…”
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Heavy-Ion-Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence by Javanainen, Arto, Turowski, Marek, Galloway, Kenneth F., Nicklaw, Christopher, Ferlet-Cavrois, Veronique, Bosser, Alexandre, Lauenstein, Jean-Marie, Muschitiello, Michele, Pintacuda, Francesco, Reed, Robert A., Schrimpf, Ronald D., Weller, Robert A., Virtanen, A.

“…Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This…”
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Total-Ionizing-Dose Effects on 3-D Sequentially Integrated FDSOI Ring Oscillators by Toguchi, Shintaro, Zhang, En Xia, Fleetwood, Daniel M., Schrimpf, Ronald D., Moreau, Stephane, Batude, Perrine, Brunet, Laurent, Andrieu, Francois, Alles, Michael L.

“…Total-ionizing-dose (TID) responses are investigated for fully depleted silicon-on-insulator (FDSOI) ring oscillators (ROs) in 3-D architectures. Operational…”
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Total-Ionizing-Dose Effects on 3D Sequentially Integrated, Fully Depleted Silicon-on-Insulator MOSFETs by Toguchi, Shintaro, Zhang, En Xia, Gorchichko, Mariia, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Moreau, Stephane, Cheramy, Severine, Batude, Perrine, Brunet, Laurent, Andrieu, Francois, Alles, Michael L.

“…Effects of additional thermal budget associated with a three-dimensional (3D) fabrication sequence are evaluated for the total-ionizing dose radiation response…”
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Effects of Layer-to-Layer Coupling on the Total-Ionizing-Dose Response of 3-D-Sequentially Integrated FD-SOI MOSFETs by Toguchi, Shintaro, Zhang, En Xia, Rony, Mohammed W., Luo, Xuyi, Fleetwood, Daniel M., Schrimpf, Ronald D., Moreau, Stephane, Cheramy, Severine, Batude, Perrine, Brunet, Laurent, Andrieu, Francois, Alles, Michael L.

“…Total-ionizing-dose (TID) responses are investigated for 3-D-sequentially integrated fully depleted silicon-on-insulator (FD-SOI) MOSFETs. Strong…”
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Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations by Chen, Leilei, Jin, Ning, Yan, Dawei, Cao, Yanrong, Zhao, Linna, Liang, Hailian, Liu, Bin, Zhang, En Xia, Gu, Xiaofeng, Schrimpf, Ronald D., Fleetwood, Daniel M., Lu, Hai

“…Charge transport mechanisms of forward and reverse leakage currents in vertical GaN Schottky barrier diodes are investigated by measuring the…”
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Charge Trapping and Transconductance Degradation in Irradiated 3-D Sequentially Integrated FDSOI MOSFETs by Toguchi, Shintaro, Zhang, En Xia, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Moreau, Stephane, Cheramy, Severine, Batude, Perrine, Brunet, Laurent, Andrieu, Francois, Alles, Michael L.

“…Total-ionizing-dose (TID) effects are compared in 1) conventional high-temperature processed planar fully-depleted silicon-on-insulator (FD-SOI) p-channel…”
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Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices by Wang, Guocai, Bao, Lihong, Pei, Tengfei, Ma, Ruisong, Zhang, Yu-Yang, Sun, Liling, Zhang, Guangyu, Yang, Haifang, Li, Junjie, Gu, Changzhi, Du, Shixuan, Pantelides, Sokrates T, Schrimpf, Ronald D, Gao, Hong-jun

“…The capabilities to tune the conduction properties of materials by doping or electric fields are essential for the design of electronic devices. However, in…”
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Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors by Gorchichko, Mariia, Zhang, En Xia, Wang, Pan, Bonaldo, Stefano, Schrimpf, Ronald D., Reed, Robert A., Linten, Dimitri, Mitard, Jerome, Fleetwood, Daniel M.

“…Gate-all-around (GAA) silicon nanowire (NW) CMOS transistors demonstrate outstanding total-ionizing-dose (TID) tolerance due to the ultrascaled gate dielectric…”
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Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses by Borghello, Giulio, Faccio, Federico, Lerario, Edoardo, Michelis, Stefano, Kulis, Szymon, Fleetwood, Daniel M., Schrimpf, Ronald D., Gerardin, Simone, Paccagnella, Alessandro, Bonaldo, Stefano

“…The radiation response of complementary metal-oxide-semiconductor (CMOS) gate oxides is typically insensitive to true dose-rate effects, but damage in…”
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Radiation-Induced Transient Response Mechanisms in Photonic Waveguides by Ryder, Landen D., Schrimpf, Ronald D., Reed, Robert A., Weiss, Sharon M.

“…A computationally efficient approach for estimating the impact of a 3-D distribution of carriers on an optical signal propagating within a waveguide is…”
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In Situ Measurement of 1.8-MeV Proton Radiation Effects on Comb-Drive MEMS Resonators by Lee, Jaesung, McCurdy, Michael W., Reed, Robert A., Schrimpf, Ronald D., Alles, Michael A., Feng, Philip X.-L.

“…We report on in situ measurement of proton radiation effects on single-crystal silicon comb-drive resonant microelectromechanical systems (MEMS). The…”
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Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs by Jin Chen, Puzyrev, Yevgeniy S., Rong Jiang, En Xia Zhang, McCurdy, Michael W., Fleetwood, Daniel M., Schrimpf, Ronald D., Pantelides, Sokrates T., Arehart, Aaron R., Ringel, Steven A., Saunier, Paul, Lee, Cathy

“…The sensitivity of GaN/AlGaN HEMTs to 1.8 MeV proton irradiation is greatly enhanced by biasing the devices during irradiation and/or applying high field…”
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Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology by Tonigan, Andrew M., Ball, Dennis, Vizkelethy, Gyorgy, Black, Jeffrey, Black, Dolores, Trippe, James, Bielejec, Edward, Alles, Michael L., Reed, Robert, Schrimpf, Ronald D.

“…Semiconductor-insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical…”
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