Search Results - "Schramm, Jeff E."

Highly selective reactive ion etch process for InP‐based device fabrication using methane/hydrogen/argon by Schramm, Jeff E., Hu, Evelyn L., Merz, James L., Brown, Julia J., Melendes, Melissa A., Thompson, Mark A., Brown, April S.

“…The etch rates of GaInAs and AlInAs were characterized using a mixture of methane, hydrogen, and argon as a function of self‐bias voltage. Effectively infinite…”
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Reactive ion etcher self‐bias voltage regulator by Schramm, Jeff E., Babic, Dubravko I., Hu, Evelyn L., Merz, James L.

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Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using CH 4 / H 2 / O 2 / Ar reactive ion etching by Schramm, Jeff E., Babić, Dubravko I., Hu, Evelyn L., Bowers, John E., Merz, James L.

“…The addition of oxygen to methane/hydrogen/argon reactive ion etching (RIE) processes can mitigate polymer deposition, and produce vertical etched sidewalls…”
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Self-selective formation of organic masks for methane/hydrogen reactive ion etching of InP by Schramm, J.E., Yu, D.G., Pekarik, J.J., Hu, E.L., Merz, J.L.

“…It is demonstrated that the polymer byproduct of methane/hydrogen RIE (reactive ion etching) can be used advantageously in forming thin, yet durable etch…”
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