Search Results - "Schowalter, L. J."

AlN bandgap temperature dependence from its optical properties by Silveira, E., Freitas, J.A., Schujman, S.B., Schowalter, L.J.

“…In the present work we report on the AlN gap energy temperature dependence studied through the optical properties of high-quality large bulk AlN single…”
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Near-bandedge cathodoluminescence of an AlN homoepitaxial film by Silveira, E., Freitas, J. A., Kneissl, M., Treat, D. W., Johnson, N. M., Slack, G. A., Schowalter, L. J.

“…Cathodoluminescence experiments were performed on a high-quality AlN epitaxial film grown by organometallic vapor phase epitaxy on a large single crystal AlN…”
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Development of native, single crystal AlN substrates for device applications by Schowalter, L. J., Schujman, S. B., Liu, W., Goorsky, M., Wood, M. C., Grandusky, J., Shahedipour-Sandvik, F.

“…Ultra‐low dislocation density aluminum nitride is a very promising substrate for many device structures based on the III–V nitride system. A better lattice and…”
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Electron paramagnetic resonance of a donor in aluminum nitride crystals by Evans, S. M., Giles, N. C., Halliburton, L. E., Slack, G. A., Schujman, S. B., Schowalter, L. J.

“…Electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) spectra are obtained from a donor in aluminum nitride (AlN) crystals…”
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AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN by Hu, X., Deng, J., Pala, N., Gaska, R., Shur, M. S., Chen, C. Q., Yang, J., Simin, G., Khan, M. A., Rojo, J. C., Schowalter, L. J.

“…We report on the performance of AlGaN/GaN/AlN heterostructure field-effect transistors (HFETs) grown over slightly-off c-axis, single-crystal, bulk AlN…”
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Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN by Gaska, R., Chen, C., Yang, J., Kuokstis, E., Khan, A., Tamulaitis, G., Yilmaz, I., Shur, M. S., Rojo, J. C., Schowalter, L. J.

“…An approach for growing high-quality AlGaN/AlN multiple quantum wells (MQW) emitting in deep UV region is proposed. The structures are deposited on bulk AlN…”
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Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film by Silveira, E., Freitas, J.A., Slack, G.A., Schowalter, L.J., Kneissl, M., Treat, D.W., Johnson, N.M.

“…In the present work we will report on the optical properties of an AlN film homoepitaxially grown on a high-quality large bulk AlN single crystal. The latter…”
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Resonant nonlinear susceptibility near the GaAs band gap by ZHANG, X.-C, JIN, Y, YANG, K, SCHOWALTER, L. J

“…Article abstract not included…”
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Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes by Ren, Z., Sun, Q., Kwon, S.-Y., Han, J., Davitt, K., Song, Y. K., Nurmikko, A. V., Cho, H.-K., Liu, W., Smart, J. A., Schowalter, L. J.

“…The authors report the growth of AlGaN epilayers and deep ultraviolet (UV) light emitting diodes (LEDs) on bulk AlN substrates. Heteroepitaxial nucleation and…”
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Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements by SILVEIRA, E, FREITAS, J. A, GLEMBOCKI, O. J, SLACK, G. A, SCHOWALTER, L. J

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Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates by Schowalter, L. J., Shusterman, Y., Wang, R., Bhat, I., Arunmozhi, G., Slack, G. A.

“…High quality epitaxial AlN and AlxGa1−xN layers have been grown by organo-metallic vapor-phase epitaxy on single crystal a-face AlN substrates. Here we report…”
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Surface reconstruction phase diagram and growth on GaAs(111)B substrates by molecular beam epitaxy by Yang, K., Schowalter, L. J.

“…A three-dimensional phase diagram is introduced to describe the dependence of GaAs(111)B surface reconstruction phases as observed by reflection high-energy…”
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Electrical behavior of isolated multiwall carbon nanotubes characterized by scanning surface potential microscopy by Schujman, S. B., Vajtai, R., Biswas, S., Dewhirst, B., Schowalter, L. J., Ajayan, P.

“…We measured the surface electric potential distribution on individual, electrically contacted and biased, multiwall carbon nanotubes using scanning surface…”
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Growth and structure of epitaxial Al and Cu films on CaF2 by SHUSTERMAN, Y. V, YAKOVLEV, N. L, DOVIDENKO, K, SCHOWALTER, L. J

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Characterization of atomic force microscope tips by adhesion force measurements by THUNDAT, T, ZHENG, X.-Y, CHEN, G. Y, SHARP, S. L, WARMACK, R. J, SCHOWALTER, L. J

“…The resolution limit in an atomic force microscope image usually is attributed to the finite radius of the contacting probe. Here, it is shown that this…”
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Electromechanical coupling coefficient for surface acoustic waves in single-crystal bulk aluminum nitride by Bu, G., Ciplys, D., Shur, M., Schowalter, L. J., Schujman, S., Gaska, R.

“…The electromechanical coupling coefficient K2 for surface acoustic waves propagating on c and a surfaces of bulk AlN single crystals has been measured using…”
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Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates by Sampath, A.V., Garrett, G.A., Readinger, E.D., Enck, R.W., Shen, H., Wraback, M., Grandusky, J.R., Schowalter, L.J.

“…The optical and structural properties of AlGaN active regions containing nanoscale compositional inhomogeneities (NCI) grown on low dislocation density bulk…”
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Morphology of facets on vapor-grown AIN crystals by YAKOVLEV, N. L, ROJO, J. C, SCHOWALTER, L. J

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Role of elastic scattering in ballistic-electron-emission microscopy of Au/Si(001) and Au/Si(111) interfaces by SCHOWALTER, L. J, LEE, E. Y

“…A ballistic-electron spectroscopy, based on the scanning tunneling microscope, was used to probe the conservation of transverse crystal momentum at the…”
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Surface morphology of epitaxial CaF2 films on Si substrates by FATHAUER, R. W, SCHOWALTER, L. J

“…The surfaces of epitaxial CaF2 layers grown on (100) and (111) Si by molecular beam epitaxy have been studied using scanning electron microscopy. The (111)…”
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