Search Results - "Schott, J. T."

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  1. 1
    Radiation-Hardened JFET Devices and CMOS Circuits Fabricated in SOI Films

    Radiation-Hardened JFET Devices and CMOS Circuits Fabricated in SOI Films by Tsaur, B-Y., Sferrino, V. J., Choi, H. K., Chen, C. K., Mountain, R. W., Schott, J. T., Shedd, W. M., LaPierre, D. C., Blanchard, R.

    Published in IEEE transactions on nuclear science (01-12-1986)
    “…The effects of total-dose radiation have been investigated for the first complementary JFETs fabricated in zone-melting-recrystallized (ZMR) Si films on…”
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  2. 2
    Pattern imprinting in CMOS static RAMS from CO-60 irradiation

    Pattern imprinting in CMOS static RAMS from CO-60 irradiation by Schott, J T, Zugich, M H

    Published in IEEE transactions on nuclear science (01-12-1987)
    “…Total dose irradiation of various CMOS SRAMs is shown to imprint the pattern stored in the memory during irradiation. This imprinted pattern is the preferred…”
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  3. 3
    Capacitance transient spectra of processing- and radiation-induced defects in silicon solar cells

    Capacitance transient spectra of processing- and radiation-induced defects in silicon solar cells by Schott, J. T., DeAngelis, H. M., Drevinsky, P. J.

    Published in Journal of electronic materials (01-03-1980)
    “…Capacitance transient spectroscopy is used to study defects in chips of fully fabricated Si solar cells. Characteristic differences are observed as a function…”
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  4. 4
    Silicon-on-Insulator Technologies,--are We Converging on a Technique of Choice?

    Silicon-on-Insulator Technologies,--are We Converging on a Technique of Choice? by Schott, J. T., Shedd, W. M.

    “…This paper attempts to present an unbiased review and evaluation of the dozen or more techniques under development to fabricate SOI structures. It includes an…”
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  5. 5
    Temperature dependence of the absorption coefficient of GaAs and ZnSe at 10.6 μm

    Temperature dependence of the absorption coefficient of GaAs and ZnSe at 10.6 μm by Skolnik, L. H., Lipson, H. G., Bendow, B., Schott, J. T.

    Published in Applied physics letters (15-10-1974)
    “…The temperature (T) dependence of the absorption coefficient β at 10.6 μm of Czochralski-grown high-resistivity GaAs and chemical vapor deposited (CVD) ZnSe is…”
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  6. 6
    Temperature Dependence of the Absorption Coefficient of GaAs and ZnSe at 10.6 Micron

    Temperature Dependence of the Absorption Coefficient of GaAs and ZnSe at 10.6 Micron by Skolnik, L H, Lipson, H G, Bendow, B, Schott, J T

    Published in Applied physics letters (15-10-1974)
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  7. 7
    Pulse Echo Measurements Telephone and Television Facilities

    Pulse Echo Measurements Telephone and Television Facilities by Abraham, L. G., Maggio, J. B., Lebert, A. W., Schott, J. T.

    “…Pulse echo measurements have been used on telephone and television facilities since 1940 to locate impedance irregularities and control quality in manufacture…”
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