Search Results - "Schoenfeld, W. V."
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1
A Quantum Dot Single-Photon Turnstile Device
Published in Science (American Association for the Advancement of Science) (22-12-2000)“…Quantum communication relies on the availability of light pulses with strong quantum correlations among photons. An example of such an optical source is a…”
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2
Impact of oxygen source parameters on homoepitaxial ZnO films grown at low-temperature on Zn-polar substrates
Published in Journal of alloys and compounds (05-03-2013)“…► ZnO homoepitaxial films were directly grown on Zn-polar ZnO substrates by PAMBE. ► Atomically flat surface was achieved with monolayer height steps at low…”
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3
Pareto analysis of critical challenges for emerging manufacturing technologies in silicon photovoltaics
Published in Solar energy (01-09-2014)“…•A Pareto analysis of challenges for emerging c-Si technologies has been conducted.•Six sub-categories were used, three in processing and three in…”
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4
Cavity-quantum electrodynamics using a single InAs quantum dot in a microdisk structure
Published in Applied physics letters (18-06-2001)“…We investigate cavity-quantum electrodynamics (QED) effects in an all-semiconductor nanostructure by tuning a single self-assembled InAs quantum dot (QD) into…”
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5
Semiconductor quantum dot: a quantum light source of multicolor photons with tunable statistics
Published in Physical review letters (17-12-2001)“…We investigate the intensity correlation properties of single photons emitted from an optically excited single semiconductor quantum dot. The second order…”
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6
High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes
Published in Applied physics letters (21-11-2005)“…InGaN multiquantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 410 to 510 nm were irradiated with Co 60 γ…”
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7
Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots
Published in Applied physics letters (07-08-2000)“…We report up-converted photoluminescence in a structure with InAs quantum dots embedded in GaAs. An efficient emission from the GaAs barrier is observed with…”
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8
Bandgap engineering of sol-gel synthesized amorphous Zn1−xMgxO films
Published in Applied physics letters (27-06-2011)“…Amorphous Zn1−xMgxO (α-Zn1−xMgxO) ternary alloy thin films across the full compositional range were synthesized by a low-cost sol-gel method on quartz…”
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9
Deep-ultraviolet photodetectors from epitaxially grown NixMg1−xO
Published in Applied physics letters (18-10-2010)“…Deep-ultraviolet (DUV) photodetectors were fabricated from high quality NixMg1−xO epitaxially grown by plasma-assisted molecular beam epitaxy on an…”
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10
Radiative lifetimes of single excitons in semiconductor quantum dots — manifestation of the spatial coherence effect
Published in Solid state communications (01-01-2001)“…Using time correlated single photon counting combined with temperature dependent diffraction limited confocal photoluminescence spectroscopy we accurately…”
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11
Optical and structural properties of NiMgO thin films formed by sol–gel spin coating
Published in Thin solid films (30-04-2012)“…Ni1−xMgxO thin films across the full compositional range were formed by a low-cost sol–gel spin coating method. Optical transmission of the resultant films in…”
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12
Surface morphologies of homoepitaxial ZnO thin films on non-miscut ZnO substrates
Published in Applied surface science (15-07-2013)“…•High quality ZnO homoepitaxial films were grown on Zn-polar non-miscut ZnO substrates.•Atomically flat surface was achieved with monolayer height steps at low…”
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13
Self-assembling quantum dot lattices through nucleation site engineering
Published in Journal of crystal growth (01-03-2002)“…The long range ordering of epitaxial semiconductor quantum dots is investigated using several crystal growth techniques on prepatterned substrates. We have…”
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14
Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots
Published in Physical review. B, Condensed matter and materials physics (15-09-2000)“…We present magnetoluminescence measurements of InAs/GaAs self-assembled quantum dots (QD's) at different excitation intensities. By applying high excitation…”
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15
Argon ion damage in self-assembled quantum dots structures
Published in Applied physics letters (16-11-1998)“…The effects of radiation damage exposure on InGaAs quantum wells and InAs quantum dots are compared using luminescence spectroscopy techniques. A large…”
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16
Optimization of photoluminescence lifetime for ZnO films grown on ZnO substrates at low temperature
Published in Materials letters (15-04-2013)“…ZnO films were grown on Zn-polar ZnO substrates with 0.5° miscut toward the [1EQ \O(1,¯)00] direction by plasma-assisted molecular beam epitaxy (PAMBE). An…”
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Cubic ZnxMg1−xO thin films grown by plasma-assisted molecular-beam epitaxy for optoelectronic applications
Published in Journal of materials research (01-06-2010)“…Heteroepitaxial ZnxMg1−xO thin films were grown on lattice-matched MgO (100) substrates using radiofrequency plasma-assisted molecular-beam epitaxy…”
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18
Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique
Published in Journal of electronic materials (01-09-1998)“…We report the tunability of up to 150 meV of the ground state transition of self-assembled InAs quantum dots (QDs) using Mn ion implantation and subsequent…”
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19
Nonclassical Radiation from a Single Quantum Dot
Published in Physica status solidi. B. Basic research (01-01-2002)“…We report the experimental observation of photon antibunching in the photoluminescence of a chemically synthesized CdSe/ZnS quantum dot (QD) at room…”
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Journal Article Conference Proceeding -
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Quantum Dot Lasers Using High-Q Microdisk Cavities
Published in Physica status solidi. B. Basic research (01-04-2001)“…We report experimental observation of optically‐pumped continuous‐wave lasing from self‐assembled quantum dots (QDs) embedded in high‐quality factor (Q)…”
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Journal Article Conference Proceeding