Search Results - "Schmidbauer, Martin"

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    High-precision absolute lattice parameter determination of SrTiO3, DyScO3 and NdGaO3 single crystals by Schmidbauer, Martin, Kwasniewski, Albert, Schwarzkopf, Jutta

    “…The lattice parameters of three perovskite‐related oxides have been measured with high precision at room temperature. An accuracy of the order of 10−5 has been…”
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    Journal Article
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    Stability of ZnSe-Passivated Laser Facets Cleaved in Air and in Ultra-High Vacuum by Boschker, Jos E., Spengler, Uwe, Ressel, Peter, Schmidbauer, Martin, Mogilatenko, Anna, Knigge, Andrea

    Published in IEEE photonics journal (01-06-2022)
    “…Catastrophic optical mirror damage (COMD) is one of the main failure mechanisms limiting the reliability of GaAs based laser diodes. Here, we compare the facet…”
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    Dynamical X‐ray diffraction imaging of voids in dislocation‐free high‐purity germanium single crystals by Gradwohl, Kevin-P., Danilewsky, Andreas N., Roder, Melissa, Schmidbauer, Martin, Janicskó-Csáthy, József, Gybin, Alexander, Abrosimov, Nikolay, Sumathi, R. Radhakrishnan

    Published in Journal of applied crystallography (01-08-2020)
    “…White‐beam X‐ray topography has been performed to provide direct evidence of micro‐voids in dislocation‐free high‐purity germanium single crystals. The voids…”
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    Strain Engineering of Ferroelectric Domains in KxNa1−xNbO3 Epitaxial Layers by Schwarzkopf, Jutta, Braun, Dorothee, Hanke, Michael, Uecker, Reinhard, Schmidbauer, Martin

    Published in Frontiers in materials (16-08-2017)
    “…The application of lattice strain through epitaxial growth of oxide films on lattice mismatched perovskite-like substrates strongly influences the structural…”
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    Second-harmonic performance of a-axis-oriented ZnO nanolayers on sapphire substrates by Neumann, Uwe, Grunwald, Ruediger, Griebner, Uwe, Steinmeyer, Günter, Schmidbauer, Martin, Seeber, Wolfgang

    Published in Applied physics letters (24-10-2005)
    “…We report on the nonlinear optical performance of sub-μm ZnO films grown by metal organic aerosol deposition on r-plane sapphire substrates. These films…”
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    Self-stabilization of the equilibrium state in ferroelectric thin films by Gaal, Peter, Schmidt, Daniel, Khosla, Mallika, Richter, Carsten, Boesecke, Peter, Novikov, Dmitri, Schmidbauer, Martin, Schwarzkopf, Jutta

    Published in Applied surface science (15-03-2023)
    “…(K,Na)NbO3 is a lead-free and sustainable ferroelectric material with electromechanical parameters comparable to Pb(Zr,Ti)O3 (PZT) and other lead-based solid…”
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    Dielectric function and interband critical points of compressively strained ferroelectric K 0.85 Na 0.15 NbO 3 thin film with monoclinic and orthorhombic symmetry by Bin Anooz, Saud, Petrik, Peter, Wang, Yankun, Mukherjee, Deshabrato, Schmidbauer, Martin, Schwarzkopf, Jutta

    Published in Optics express (22-04-2024)
    “…The dielectric function and interband critical points of compressively strained ferroelectric K Na NbO thin film grown by metal-organic vapor phase epitaxy…”
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    Dielectric function and interband critical points of compressively strained ferroelectric K0.85Na0.15NbO3 thin film with monoclinic and orthorhombic symmetry by Bin Anooz, Saud, Petrik, Peter, Wang, Yankun, Mukherjee, Deshabrato, Schmidbauer, Martin, Schwarzkopf, Jutta

    Published in Optics express (22-04-2024)
    “…The dielectric function and interband critical points of compressively strained ferroelectric K0.85Na0.15NbO3 thin film grown by metal-organic vapor phase…”
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    Journal Article
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    Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy by Wagner, Guenter, Baldini, Michele, Gogova, Daniela, Schmidbauer, Martin, Schewski, Robert, Albrecht, Martin, Galazka, Zbigniew, Klimm, Detlef, Fornari, Roberto

    “…Epitaxial β‐Ga2O3 layers have been grown on β‐Ga2O3 (100) substrates using metal‐organic vapor phase epitaxy. Trimethylgallium and pure oxygen or water were…”
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    Y‐Stabilized ZrO 2 as a Promising Wafer Material for the Epitaxial Growth of Transition Metal Dichalcogenides by Wang, Rongbin, Schmidbauer, Martin, Koch, Norbert, Martin, Jens, Sadofev, Sergey

    “…Y‐stabilized ZrO 2 (YSZ) as a promising single‐crystal wafer material for the epitaxial growth of transition metal dichalcogenides applicable for both physical…”
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    Y‐Stabilized ZrO2 as a Promising Wafer Material for the Epitaxial Growth of Transition Metal Dichalcogenides by Wang, Rongbin, Schmidbauer, Martin, Koch, Norbert, Martin, Jens, Sadofev, Sergey

    “…Y‐stabilized ZrO2 (YSZ) as a promising single‐crystal wafer material for the epitaxial growth of transition metal dichalcogenides applicable for both physical…”
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  13. 13

    High-precision absolute lattice parameter determination of SrTiO 3 , DyScO 3 and NdGaO 3 single crystals by Schmidbauer, Martin, Kwasniewski, Albert, Schwarzkopf, Jutta

    “…The lattice parameters of three perovskite-related oxides have been measured with high precision at room temperature. An accuracy of the order of 10 −5 has…”
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    Journal Article
  14. 14

    Electronic Synapses Enabled by an Epitaxial SrTiO3‐δ / Hf0.5Zr0.5O2 Ferroelectric Field‐Effect Memristor Integrated on Silicon by Siannas, Nikitas, Zacharaki, Christina, Tsipas, Polychronis, Kim, Dong Jik, Hamouda, Wassim, Istrate, Cosmin, Pintilie, Lucian, Schmidbauer, Martin, Dubourdieu, Catherine, Dimoulas, Athanasios

    Published in Advanced functional materials (19-02-2024)
    “…Synapses play a vital role in information processing, learning, and memory formation in the brain. By emulating the behavior of biological synapses, electronic…”
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    Controlled integration of InP nanoislands with CMOS-compatible Si using nanoheteroepitaxy approach by Kamath, Anagha, Ryzhak, Diana, Rodrigues, Adriana, Kafi, Navid, Golz, Christian, Spirito, Davide, Skibitzki, Oliver, Persichetti, Luca, Schmidbauer, Martin, Hatami, Fariba

    “…Indium phosphide (InP) nanoislands are grown on pre-patterned Silicon (001) nanotip substrate using gas-source molecular-beam epitaxy via nanoheteroepitaxy…”
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    Approaching the high intrinsic electrical resistivity of NbO2 in epitaxially grown films by Stoever, Julian, Boschker, Jos E., Bin Anooz, Saud, Schmidbauer, Martin, Petrik, Peter, Schwarzkopf, Jutta, Albrecht, Martin, Irmscher, Klaus

    Published in Applied physics letters (04-05-2020)
    “…NbO2 is a promising candidate for resistive switching devices due to an insulator-metal transition above room temperature, which is related to a phase…”
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