Search Results - "Schemerov, I. V."

Optimization of the Transient Characteristics of the Rectifiers under High-Energy Electron Irradiation by Schemerov, I. V., Lagov, P. B., Kobeleva, S. P., Kirilov, V. D., Drenin, A. S., Mescheryakov, A. A.

“…It is shown that capacitance–frequency characterization can help to derive the optimization limits for radiation optimization of the transient properties of…”
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Study of the Abnormally High Photocurrent Relaxation Time in α-Ga2O3-Based Schottky Diodes by Schemerov, I. V., Polyakov, A. Yu, Almaev, A. V., Nikolaev, V. I., Kobeleva, S. P., Vasilyev, A. A., Kirilov, V. D., Kochkova, A. I., Kopiev, V. V., Kulanchikov, Yu. O.

“…Ga 2 O 3 is a wide-bandgap material with a number of unique characteristics that make it a promising material for photonics: it is optically transparent to…”
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On the Problem of Determining the Bulk Lifetime by Photoconductivity Decay on the Unpassivated Samples of Monocrystalline Silicon by Anfimov, I. M., Kobeleva, S. P., Pylnev, A. V., Schemerov, I. V., Egorov, D. S., Yurchuk, S. Yu

“…In the indirect band gap semiconductors, and in particular, in silicon, the lifetime of nonequilibrium charge carriers is determined by recombination through…”
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A device for free-carrier recombination lifetime measurements by Kobeleva, S. P., Anfimov, I. M., Schemerov, I. V.

“…The design of a microwave system, the user interface, and the basic characteristics of noncontact equipment for measuring the recombination lifetime of free…”
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Reference samples of the silicon single crystalls free carrier recombination lifetime by S. P. Kobeleva, I. M. Anfimov, I. V. Schemerov, L. P. Kholodny, I. V. Borzikh, V. V. Ptashinsty

“…A comparison of two methods for measurement of the free carrier recombination lifetime in the unpassivated samples of high resistivity n-type silicon single…”
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