Search Results - "Scheick, L. Z."

Effect of Shielding on Single-Event Rates in Devices That Are Sensitive to Particle Range by Edmonds, L D, Scheick, L Z

“…Single-event rates in space can include contributions from low-energy particles such that the LET is not constant. A rate calculation algorithm for such a…”
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Dosimetry based on the erasure of floating gates in the natural radiation environments in space by Scheick, L.Z., McNulty, P.J., Roth, D.R.

“…A new method is described for measuring ionizing radiation on spacecraft using an array of floating gate avalanche injected metal oxide silicon (FAMOS)…”
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Physical Mechanisms of Ion-Induced Stuck Bits in the Hyundai 16M[Formula Omitted]4 SDRAM by Edmonds, L.D, Scheick, L.Z

“…It was previously thought that stuck bits in the Hyundai 16M times 4 SDRAM were caused by micro-dose. It is argued here that the correct mechanism is micro…”
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Microdosimetry of the ultraviolet erasable programmable read-only memory experiment on the microelectronics and photonics test bed: recent advances in small-volume analysis by Scheick, L.Z., Blake, B., McNulty, P.J.

“…A commercial ultraviolet erasable programmable read-only memory (UVPROM) was used to demonstrate a dosimetry technique for both ground and space applications…”
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Measurements of dose with individual FAMOS transistors by Scheick, L.Z., McNulty, P.J., Roth, D.R., Davis, M.G., Mason, B.E.

“…A new method is described for measuring the doses absorbed by microstructures from an exposure to ionizing radiation. The decrease in the duration of…”
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Physical Mechanisms of Ion-Induced Stuck Bits in the Hyundai 16M \,\times\, 4 SDRAM by Edmonds, L.D., Scheick, L.Z.

“…It was previously thought that stuck bits in the Hyundai 16M times 4 SDRAM were caused by micro-dose. It is argued here that the correct mechanism is micro…”
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Radiation Effects in Power Systems: A Review by Adell, P. C., Scheick, L. Z.

“…To guarantee mission success and minimize the risk of anomalies in space, current space-power architectures are designed conservatively and use electronics…”
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Dose and microdose measurement based on threshold shifts in MOSFET arrays in commercial SRAMs by Scheick, L.Z., Swift, G.M.

“…A new dosimetry method using an array of MOS transistors is described for a measuring dose absorbed from ionizing radiation. The method uses direct measurement…”
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Ion-induced stuck bits in 1T/1C SDRAM cells by Edmonds, L.D., Guertin, S.M., Scheick, L.Z., Nguyen, D., Swift, G.M.

“…Radiation exposure of certain types of devices tends to stick bits, causing them to not be read out correctly after programming. Evidence of a linear trend in…”
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Charge removal from FGMOS floating gates by McNulty, P.J., Sushan Yow, Scheick, L.Z., Abdel-Kader, W.G.

“…Radiation effects on floating-gate-metal-oxide-semiconductor (FGMOS) devices in the passive or quiescent mode are due to a combination of the removal of…”
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Analysis of radiation effects on individual DRAM cells by Scheick, L.Z., Guertin, S.M., Swift, G.M.

“…A novel way to measure the radiation characteristics of DRAM memory cells is presented. Radiation exposure tends to drive retention times lower for cells. The…”
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Measurement of the effective sensitive volume of FAMOS cells of an ultraviolet erasable programmable read-only memory by Scheick, L.Z., McNulty, P.J., Roth, D.R.

“…A method is described for measuring the sensitive volume of the oxide which makes up the collection region for erasure surrounding the floating gate of the…”
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First failure predictions for EPROMs of the type flown on the MPTB satellite by McNulty, P.J., Scheick, L.Z., Roth, D.R., Davis, M.G., Tortora, M.R.S.

“…Extreme value analysis applied to ground test data provides a new method for predicting the first cell to fail in an array of EPROM memory cells exposed to…”
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Single-chip dosimeters to accompany photometric systems flown in space by McNulty, P.J., Scheick, L.Z., Sushan Yow, Campbell, A.B., Savage, M.W.

“…Modern photometer systems need to be accompanied by dosimeters that monitor exposure to total ionizing dose, ultraviolet light, and the flux of particles with…”
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Single Event Rates for Devices Sensitive to Particle Energy by Edmonds, L. D., Scheick, L. Z., Banker, M. W.

“…Single event rates (SER) can include contributions from low-energy particles such that the linear energy transfer (LET) is not constant. Previous work found…”
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Recent Power MOSFET Single Event Testing Results by Scheick, L. Z.

“…The results of recent Single Event Effect (SEE) testing of newly available power MOSFETS are presented…”
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Role of Process Variation in the Radiation Response of FGMOS Devices by McNulty, P. J., Poole, K. F., Scheick, L. Z., Sushan Yow

“…UV erasure times are measured and used to determine the degree of process variation across the die of FGMOS memories. Analysis of data obtained following…”
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TID, SEE and radiation induced failures in advanced flash memories by Nguyen, D.N., Scheick, L.Z.

“…We report on TID and SEE tests of multi-level and higher density flash memories. Standby currents and functionality tests were used to characterize the…”
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Effect of Dose History on SEGR Properties of Power MOSFETS by Scheick, L.Z., Selva, L.E.

“…We present data that show that proton radiation damage can influence the single event gate rupture response of a power MOSFET. A primary phenomenon of single…”
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Compendium of Recent Test Results of Single Event Effects Conducted by the Jet Propulsion Laboratory by Allen, G. R., Guertin, S. M., Scheick, L. Z., Irom, F., Zajac, S.

“…This paper reports heavy ion, proton, and laser induced single event effects results for a variety of microelectronic devices targeted for possible use in NASA…”
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