Search Results - "Scheibler, H. E"

p-GaAs(Cs,O)-photocathodes: Demarcation of domains of validity for practical models of the activation layer by Bakin, V. V., Toropetsky, K. V., Scheibler, H. E., Terekhov, A. S., Jones, L. B., Militsyn, B. L., Noakes, T. C. Q.

“…The (Cs,O)-activation procedure for p-GaAs(Cs,O)-photocathodes was studied with the aim of demarcating the domains of validity for the two practical models of…”
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Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface by Bakin, V. V., Kosolobov, S. N., Rozhkov, S. A., Scheibler, H. E., Terekhov, A. S.

“…Spontaneous changes in photoemission properties of a р -GaN(Cs)–vacuum interface with effective negative electronic affinity induced by rearrangements of its…”
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Semiconductor surfaces with negative electron affinity by Bakin, V. V., Pakhnevich, A. A., Zhuravlev, A. G., Shornikov, A. N., Akhundov, I. O., Tereshechenko, O. E., Alperovich, V. L., Scheibler, H. E., Terekhov, A. S.

“…The review of the studies of GaAs and GaN surfaces performed by the authors at the Institute of Semiconductor Physics (Novosibirsk) are presented. The results…”
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Optical phonon cascade emission by photoelectrons at a p-GaN (Cs,O)–vacuum interface by Rozhkov, S. A., Bakin, V. V., Gorshkov, D. V., Kosolobov, S. N., Scheibler, H. E., Terekhov, A. S.

“…It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN (Cs,O) photocathode to vacuum is accompanied by the…”
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Evolution of electronic properties at the p -GaAs(Cs,O) surface during negative electron affinity state formation by Alperovich, V. L., Paulish, A. G., Scheibler, H. E., Terekhov, A. S.

“…The evolution of surface band bending and surface photovoltage was monitored in situ by photoreflectance spectroscopy during activation of the surface of…”
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Structural and electronic transformations at the Cs/GaAs [formula omitted] interface by Tereshchenko, O.E., Voronin, V.S., Scheibler, H.E., Alperovich, V.L., Terekhov, A.S.

“…Combined study of the structure and electronic properties of the Cs/GaAs(1 0 0) interface is performed by means of low-energy electron diffraction, electron…”
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Nonlocal and local mechanisms of cesium-induced chemisorption of oxygen on a p-GaAs(Cs, O) surface by Bakin, V. V., Toropetsky, K. V., Scheibler, H. E., Terekhov, A. S.

“…It has been established that the probability of Cs-induced chemisorption of molecular oxygen on a p -GaAs(Cs) surface is mainly determined by the probability…”
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Refraction of thermalized electrons emitted ballistically into vacuum from p +-GaAs-(Cs,O) by Bakin, V. V., Pakhnevich, A. A., Kosolobov, S. N., Scheibler, H. E., Jaroshevich, A. S., Terekhov, A. S.

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Fourier transform analysis of electromodulation spectra: Effects of the modulation amplitude by Alperovich, V. L., Jaroshevich, A. S., Scheibler, H. E., Terekhov, A. S., Tober, Richard L.

“…Fourier transform analysis of Franz-Keldysh oscillations is applied to electroreflectance spectra of GaAs p–i–n diode structures in order to elucidate the role…”
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Unpinned behavior of the Fermi level and photovoltage on p-(100) GaAs surface facilitated by deposition of cesium by Alperovich, V.L., Paulish, A.G., Scheibler, H.E., Tynnyi, V.I., Terekhov, A.S.

“…The preparation technique of (100)GaAs surface with unpinned electronic properties is further developed in this work. It was proved that the unpinned behavior…”
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Emission of spin-polarized electrons from strained InGaP and InGaAsP photocathodes by Drescher, P., Plützer, S., Reichert, E., Schemies, M., Alperovich, V.L., Bolkhovityanov, Yu.B., Jaroshevich, A.S., Paulish, A.G., Scheibler, H.E., Terekhov, A.S.

“…Spectra of photoemission quantum yield and electron spin polarization are measured on the wide-bandgap epitaxial InGaP and InGaAsP layers, which are promising…”
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Direct spin imaging detector based on freestanding magnetic nanomembranes with electron optical amplification by Tereshchenko, O. E, Bakin, V. V, Stepanov, S. A, Golyashov, V. A, Mikaeva, A. S, Kustov, D. A, Rusetsky, V. S, Rozhkov, S. A, Scheibler, H. E, Demin, A. Yu

“…An analog of the optical polarizer/analyzer for electrons, a spin filter based on freestanding ferromagnetic (FM) nanomembrane covering the entrance of the…”
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Unpinned behavior of the Fermi level and photovoltage on p-(100) GaAs surface facilitated by deposition of cesium by ALPEROVICH, V. L, PAULISH, A. G, SCHEIBLER, H. E, TYNNYI, V. I, TEREKHOV, A. S

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Structural and electronic transformations at the Cs/GaAs(100) interface by TERESHCHENKO, O. E, VORONIN, V. S, SCHEIBLER, H. E, ALPEROVICH, V. L, TEREKHOV, A. S

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