Search Results - "Scheglov, M. E"
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Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy
Published in Semiconductors (Woodbury, N.Y.) (01-03-2022)“…We report on the fabrication of nonpolar GaN(11‒20) structures by hydride vapor phase epitaxy using an AlN buffer layer synthesized by metalorganic vapor-phase…”
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Journal Article -
2
Anisotropic Stresses in GaN Layers on an r-Al.sub.2O.sub.3 Substrate during Hydride Vapor Phase Epitaxy
Published in Semiconductors (Woodbury, N.Y.) (01-03-2022)“…We report on the fabrication of nonpolar GaN(11â20) structures by hydride vapor phase epitaxy using an AlN buffer layer synthesized by metalorganic vapor-phase…”
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Journal Article