Search Results - "Scheglov, M. E"

  • Showing 1 - 2 results of 2
Refine Results
  1. 1

    Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy by Bessolov, V. N., Konenkova, E. V., Seredova, N. V., Panteleev, V. N., Scheglov, M. E.

    Published in Semiconductors (Woodbury, N.Y.) (01-03-2022)
    “…We report on the fabrication of nonpolar GaN(11‒20) structures by hydride vapor phase epitaxy using an AlN buffer layer synthesized by metalorganic vapor-phase…”
    Get full text
    Journal Article
  2. 2

    Anisotropic Stresses in GaN Layers on an r-Al.sub.2O.sub.3 Substrate during Hydride Vapor Phase Epitaxy by Bessolov, V. N, Konenkova, E. V, Seredova, N. V, Panteleev, V. N, Scheglov, M. E

    Published in Semiconductors (Woodbury, N.Y.) (01-03-2022)
    “…We report on the fabrication of nonpolar GaN(11â20) structures by hydride vapor phase epitaxy using an AlN buffer layer synthesized by metalorganic vapor-phase…”
    Get full text
    Journal Article