Search Results - "Schefer, M."
-
1
Integrated quadrupler circuit in coplanar technology for 60 GHz wireless applications
Published in 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) (2002)“…This paper describes the design, the simulation and the measured results of a frequency quadrupler (/spl times/4 multiplier) circuit for mm-wave applications…”
Get full text
Conference Proceeding Journal Article -
2
Analytical bias dependent noise model for InP HEMT's
Published in IEEE transactions on electron devices (01-11-1995)“…A practical device model for both high frequency small signal and noise behavior of InP-HEMT's depending on both gate and drain voltage has been developed. The…”
Get full text
Journal Article -
3
CardioOp: an integrated approach to teleteaching in cardiac surgery
Published in Studies in health technology and informatics (2000)“…The complexity of cardiac surgery requires continuous training, education and information addressing different individuals: physicians (cardiac surgeons,…”
Get more information
Journal Article -
4
Intraneural hemorrhage in traumatic oculomotor nerve palsy
Published in Radiology case reports (01-03-2017)“…Abstract Isolated traumatic oculomotor nerve palsy without internal ophthalmoplegia is a rare condition after closed head trauma. The nerve strain leads to…”
Get full text
Journal Article -
5
Integrated coplanar mm-wave amplifier with gain control using a dual-gate InP HEMT
Published in IEEE transactions on microwave theory and techniques (01-12-1996)“…Variable gain mm-wave amplifiers, based on InP high-electron mobility transistor (HEMT) devices, are demonstrated. The two-stage circuits consist of a…”
Get full text
Journal Article -
6
Passive, coplanar V-band HEMT mixer
Published in Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials (1997)“…A passive V-band mixer is presented which uses an InP HEMT for mixing. The measured minimum conversion loss is 10.3 dB (RF 61 GHz, LO 60 GHz) with an LO power…”
Get full text
Conference Proceeding -
7
Integrated coplanar mm-wave amplifier with gain control using a dual-gate InP HEMT
Published in 1996 IEEE MTT-S International Microwave Symposium Digest (1996)“…A variable gain mm-wave amplifier, based on InP HEMT devices, is demonstrated. The measured gain control range of 14 dB is the largest reported in the mm-wave…”
Get full text
Conference Proceeding -
8
Using the SourceXtractor++ package for data reduction
Published 05-12-2022“…The Euclid satellite is an ESA mission scheduled for launch in September 2023. To optimally perform critical stages of the data reduction, such as object…”
Get full text
Journal Article -
9
Approach for developing a large signal model of a 150 GHz HEMT
Published in Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits (1994)“…In this contribution the development of a large signal model describing the electrical behaviour of an InAlAs/InGaAs/InP-HEMT will be discussed. The…”
Get full text
Conference Proceeding -
10
Modelling of low noise InP based HEMTs
Published in 1995 25th European Microwave Conference (01-09-1995)“…A device model for both high frequency small signal and noise behaviour of InP-HEMTs, depending on both gate and drain source voltage has been developed. It…”
Get full text
Conference Proceeding -
11
Low noise optimization of InP HEMTs
Published in Seventh International Conference on Indium Phosphide and Related Materials (1995)“…The influence of the noise figure on both gate and drain source voltage, threshold voltage and transistor size have been investigated for the design of low…”
Get full text
Conference Proceeding -
12
Monolithic V-band high power and varactor tunable HEMT oscillators
Published in Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 (1995)“…The design, fabrication, and the measured results of V-band monolithically integrated fundamental oscillators are presented. The active device is a 0.2 /spl…”
Get full text
Conference Proceeding -
13
A 60GHz MMIC chipset for 1-Gbit/s wireless links
Published in IEEE MTT-S International Microwave Symposium digest (01-01-2002)“…This paper describes the development of a MMIC chipset for 60GHz radio links and radars. The chipset includes a low noise amplifier, an image rejection mixer,…”
Get full text
Journal Article -
14
A 60 GHz MMIC chipset for 1-Gbit/s wireless links
Published in 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) (2002)“…This paper describes the development of a MMIC chipset for 60 GHz; radio links and radars. The chipset includes a low noise amplifier, an image rejection…”
Get full text
Conference Proceeding -
15
Active, monolithically integrated coplanar V-band mixer
Published in 1997 IEEE MTT-S International Microwave Symposium Digest (1997)“…An active V-band mixer is presented. The device used for mixing is an InP HEMT. The measured maximum mixer conversion gain is 5 dB. This is to the authors'…”
Get full text
Conference Proceeding -
16
Small and Large Signal Model of a 150 GHz InAIAs/InGaAs HEMT
Published in ESSDERC '94: 24th European Solid State Device Research Conference (01-09-1994)“…A technology for producing high-speed MMICs utilizing InAlAs/InGaAs HEMTs has been established at our laboratory. In order to simulate circuits that exploit…”
Get full text
Conference Proceeding -
17
Low noise performance of dry etched InGaAs/InAlAs HEMTs in comparison with wet recessed devices
Published in Proceedings of 8th International Conference on Indium Phosphide and Related Materials (1996)“…Lattice-matched InAlAs/InGaAs HEMTs with selectively dry etched and wet etched gate recesses have been fabricated and both high-frequency and noise…”
Get full text
Conference Proceeding