Search Results - "Schefer, M."

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  1. 1

    Integrated quadrupler circuit in coplanar technology for 60 GHz wireless applications by Schefer, M.

    “…This paper describes the design, the simulation and the measured results of a frequency quadrupler (/spl times/4 multiplier) circuit for mm-wave applications…”
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    Conference Proceeding Journal Article
  2. 2

    Analytical bias dependent noise model for InP HEMT's by Klepser, B.-U.H., Bergamaschi, C., Schefer, M., Diskus, C.G., Patrick, W., Bachtold, W.

    Published in IEEE transactions on electron devices (01-11-1995)
    “…A practical device model for both high frequency small signal and noise behavior of InP-HEMT's depending on both gate and drain voltage has been developed. The…”
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    Journal Article
  3. 3

    CardioOp: an integrated approach to teleteaching in cardiac surgery by Friedl, R, Preisack, M, Schefer, M, Klas, W, Tremper, J, Rose, T, Bay, J, Albers, J, Engels, P, Guilliard, P, Vahl, C F, Hannekum, A

    “…The complexity of cardiac surgery requires continuous training, education and information addressing different individuals: physicians (cardiac surgeons,…”
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    Journal Article
  4. 4

    Intraneural hemorrhage in traumatic oculomotor nerve palsy by Sartoretti, Thomas, Sartoretti, Elisabeth, Binkert, Christoph, MD, Czell, David, MD, Sartoretti-Schefer, Sabine, MD

    Published in Radiology case reports (01-03-2017)
    “…Abstract Isolated traumatic oculomotor nerve palsy without internal ophthalmoplegia is a rare condition after closed head trauma. The nerve strain leads to…”
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    Journal Article
  5. 5

    Integrated coplanar mm-wave amplifier with gain control using a dual-gate InP HEMT by Schefer, M., Meier, H.-P., Klepser, B.-U., Patrick, W., Bachtold, W.

    “…Variable gain mm-wave amplifiers, based on InP high-electron mobility transistor (HEMT) devices, are demonstrated. The two-stage circuits consist of a…”
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    Journal Article
  6. 6

    Passive, coplanar V-band HEMT mixer by Schefer, M., Lott, U., Patrick, W., Meier, H., Bachtold, W.

    “…A passive V-band mixer is presented which uses an InP HEMT for mixing. The measured minimum conversion loss is 10.3 dB (RF 61 GHz, LO 60 GHz) with an LO power…”
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    Conference Proceeding
  7. 7

    Integrated coplanar mm-wave amplifier with gain control using a dual-gate InP HEMT by Schefer, M., Meier, H.-P., Klepser, B.-U., Patrick, W., Bachtold, W.

    “…A variable gain mm-wave amplifier, based on InP HEMT devices, is demonstrated. The measured gain control range of 14 dB is the largest reported in the mm-wave…”
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    Conference Proceeding
  8. 8

    Using the SourceXtractor++ package for data reduction by Kümmel, M, Álvarez-Ayllón, A, Bertin, E, Dubath, P, Gavazzi, R, Hartley, W, Schefer, M

    Published 05-12-2022
    “…The Euclid satellite is an ESA mission scheduled for launch in September 2023. To optimally perform critical stages of the data reduction, such as object…”
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    Journal Article
  9. 9

    Approach for developing a large signal model of a 150 GHz HEMT by Diskus, C.G., Bergamaschi, C., Schefer, M., Patrick, W., Klepser, B.-U.H., Baechtold, W.

    “…In this contribution the development of a large signal model describing the electrical behaviour of an InAlAs/InGaAs/InP-HEMT will be discussed. The…”
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    Conference Proceeding
  10. 10

    Modelling of low noise InP based HEMTs by Klepser, B -U H, Schefer, M, Patrick, W, Bachtold, W

    Published in 1995 25th European Microwave Conference (01-09-1995)
    “…A device model for both high frequency small signal and noise behaviour of InP-HEMTs, depending on both gate and drain source voltage has been developed. It…”
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    Conference Proceeding
  11. 11

    Low noise optimization of InP HEMTs by Klepser, B.-U.H., Bergamaschi, C., Schefer, M., Patrick, W., Bachtold, W.

    “…The influence of the noise figure on both gate and drain source voltage, threshold voltage and transistor size have been investigated for the design of low…”
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    Conference Proceeding
  12. 12

    Monolithic V-band high power and varactor tunable HEMT oscillators by Schefer, M., Lott, U., Klepser, B.-U., Meier, H.-P., Patrick, W., Bachtold, W.

    “…The design, fabrication, and the measured results of V-band monolithically integrated fundamental oscillators are presented. The active device is a 0.2 /spl…”
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    Conference Proceeding
  13. 13

    A 60GHz MMIC chipset for 1-Gbit/s wireless links by Fujii, Kohei, Adamski, Miroslaw, Bianco, Piero, Gunyan, Daniel, Hall, John, Kishimura, Ron, Lesko, Camille, Schefer, Matthias, Hessel, Steve, Morkner, Henrik, Niedzwiecki, Antoni

    “…This paper describes the development of a MMIC chipset for 60GHz radio links and radars. The chipset includes a low noise amplifier, an image rejection mixer,…”
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    Journal Article
  14. 14

    A 60 GHz MMIC chipset for 1-Gbit/s wireless links by Fujii, K., Adamski, M., Bianco, P., Gunyan, D., Hall, J., Kishimura, R., Lesko, C., Schefer, M., Hessel, S., Morkner, H., Niedzwiecki, A.

    “…This paper describes the development of a MMIC chipset for 60 GHz; radio links and radars. The chipset includes a low noise amplifier, an image rejection…”
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    Conference Proceeding
  15. 15

    Active, monolithically integrated coplanar V-band mixer by Schefer, M., Lott, U., Benedickter, H., Meier, Hp, Patrick, W., Bachtold, W.

    “…An active V-band mixer is presented. The device used for mixing is an InP HEMT. The measured maximum mixer conversion gain is 5 dB. This is to the authors'…”
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    Conference Proceeding
  16. 16

    Small and Large Signal Model of a 150 GHz InAIAs/InGaAs HEMT by Diskus, C. G., Bergamaschi, C., Schefer, M., Patrick, W., Klepser, B.-U. H., Baechtold, W.

    “…A technology for producing high-speed MMICs utilizing InAlAs/InGaAs HEMTs has been established at our laboratory. In order to simulate circuits that exploit…”
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    Conference Proceeding
  17. 17

    Low noise performance of dry etched InGaAs/InAlAs HEMTs in comparison with wet recessed devices by Duran, H.C., Klepser, B.-U.H., Patrick, W., Schefer, M., Cheung, R., Bachtold, W.

    “…Lattice-matched InAlAs/InGaAs HEMTs with selectively dry etched and wet etched gate recesses have been fabricated and both high-frequency and noise…”
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    Conference Proceeding