Search Results - "Scharnholz, S."

Experimental Realization of an Eight-Stage XRAM Generator Based on ICCOS Semiconductor Opening Switches, Fed by a Magnetodynamic Storage System by Dedie, P., Brommer, V., Scharnholz, S.

“…Inductive energy storage systems reach energy densities being one order of magnitude higher than those of capacitive storages. Therefore, pulsed power supplies…”
Get full text

ICCOS Countercurrent-Thyristor High-Power Opening Switch for Currents Up to 28 kA by Dedie, P., Brommer, V., Scharnholz, S.

“…Inductive energy storage systems require opening switches which are technically much more difficult to realize than closing switches. Most advanced…”
Get full text

Refurbishment of a 30-MJ-Pulsed Power Supply for Pulsed Power Applications by Liebfried, O., Brommer, V., Scharnholz, S., Spahn, E.

“…The French-German Research Institute of Saint-Louis obtained essential parts of a 30-MJ energy supply formerly installed at Rheinmetall in Unterlüß, Germany…”
Get full text

High-power MOSFETs and fast-switching thyristors utilized as opening switches for inductive storage systems by Scharnholz, S., Brommer, V., Buderer, G., Spahn, E.

“…Taking aim at the utilization of inductive storage systems with their manifold advantages for pulsed power applications (e.g., higher energy density, lower…”
Get full text

Edge termination strategies for a 4 kV 4H-SiC thyristor by BROSSELARD, P, PLANSON, D, SCHARNHOLZ, S, RAYNAUD, C, ZORNGIEBEL, V, LAZAR, M, CHANTE, J.-P, SPAHN, E

“…Thyristors able to block 4 kV have been fabricated and characterised. The experimental forward current is 1.3 A @ V-AK = 10 V for a 9 mA gate current during…”
Get full text

Hot carrier-induced photon emission in 6H and 4H–SiC MOSFETs by Bano, E, Banc, C, Ouisse, T, Scharnholz, S

“…We report experimental results of photon emission from silicon carbide MOS transistors. Emission spectra have been measured on 6H and 4H–SiC MOSFETs, in a…”
Get full text

Twenty-Stage Toroidal XRAM Generator Switched by Countercurrent Thyristors by Dedié, Philipp, Brommer, V, Scharnholz, S

“…As inductive energy-storage technology presents-at the same power-output capability-energy densities that are one order of magnitude higher than those of…”
Get full text

Passivation of interface traps in MOS-devices on n- and p-type 6H-SiC by Stein von Kamienski, E.G., Leonhard, C., Scharnholz, S., Gölz, A., Kurz, H.

“…Interface traps in the SiO 2-6H-SiC system can be passivated by a high temperature anneal in hydrogen or moistrous atmosphere. The passivation is very…”
Get full text

A High-Power Capacitor Charger Using IGCTs in a Boost Converter Topology by Brommer, Volker, Liebfried, Oliver, Scharnholz, Sigo

“…A compact high-power capacitor charger with a boost converter topology is developed using high-power integrated gate-commutated thyristors as switches and a…”
Get full text

High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension by Paques, G., Scharnholz, S., Dheilly, N., Planson, D., De Doncker, R. W.

“…For the first time, a graded etched junction termination extension (JTE) is applied to completed 4H-SiC gate turn-off thyristors. These devices demonstrate the…”
Get full text

Deep SiC etching with RIE by Lazar, M., Vang, H., Brosselard, P., Raynaud, C., Cremillieu, P., Leclercq, J.-L., Descamps, A., Scharnholz, S., Planson, D.

“…SiC is currently an important topic in power devices. This new technology leads to lower power losses, faster switching, and higher working temperature. The…”
Get full text

Modular 50-kV IGBT Switch for Pulsed-Power Applications by Zorngiebel, Volker, Hecquard, Mickaël, Spahn, Emil, Welleman, Adriaan, Scharnholz, Sigo

“…In this paper, we describe the development of a modular semiconductor switch, based on the compact IGBT switch, presented at the 14th EML. Using a discrete…”
Get full text

Development of XRAM generators as inductive power sources for very high current pulses by Liebfried, O., Brommer, V., Scharnholz, S.

“…Generators for pulsed power applications such as electromagnetic accelerators or lasers are based on capacitive, inductive or kinetic energy storage…”
Get full text

Investigation of IGBT-devices for pulsed power applications by Scharnholz, S., Schneider, R., Spahn, E., Welleman, A., Gekenidis, S.

“…IGBT-switches from ABB Switzerland have been characterised at ISL with regard to civil and military pulsed power applications. The investigated devices are…”
Get full text

Design and simulation of a planar anode GTO thyristor on SiC by Brosselard, P., Planson, D., Scharnholz, S., Zorngiebel, V., Lazar, M., Raynaud, C., Chante, J.-P., Spahn, E.

“…4H-SiC asymmetrical gate turn-off (GTO) thyristors have been simulated using the finite element code MEDICI/spl trade/. The goal of these numerical simulations…”
Get full text

Study based on the numerical simulation of a 5 kV asymmetrical 4H-SiC thyristor for high power pulses application by Arssi, N., Locatelli, M.L., Planson, D., Chante, J.P., Zorngiebel, V., Spahn, E., Scharnholz, S.

“…This paper focuses on the study of a 5 kV asymmetrical 4H-SiC thyristor and on its junction edge termination protection. Based on a numerical semiconductor…”
Get full text

Edge termination strategies for a 4kV 4H–SiC thyristor by Brosselard, P., Planson, D., Scharnholz, S., Raynaud, C., Zorngiebel, V., Lazar, M., Chante, J.-P., Spahn, E.

“…Thyristors able to block 4kV have been fabricated and characterised. The experimental forward current is 1.3A @ VAK=10V for a 9mA gate current during 550ns…”
Get full text

The role of oxygen and nitrogen at the [formula omitted] interface by Gölz, A., Scharnholz, S., Kurz, H.

“…A method for surface preparation of 6HSiC with different plasma sources (oxygen, and nitreous oxide) to reduce defects in deposited gate oxides is presented…”
Get full text

Refurbishment of a 30 MJ pulsed power supply for pulsed power applications by Liebfried, O., Brommer, V., Scharnholz, S., Spahn, E.

“…The French-German Research Institute of Saint-Louis obtained essential parts of a 30 MJ energy supply formerly installed at Rheinmetall in Unterlüß, Germany…”
Get full text

Performance study of a novel 13.5 kV multichip thyristor switch by Scharnholz, S., Brommer, V., Zorngiebel, V., Welleman, A., Spahn, E.

“…The performance of a novel multichip thyristor switch has been investigated under different pulse conditions. The 13.5 kV switch, jointly developed by ISL and…”
Get full text