Search Results - "Scharfetter, L"

LHC1: A semiconductor pixel detector readout chip with internal, tunable delay providing a binary pattern of selected events by Heijne, Erik H.M., Antinori, F., Barberis, D., Becks, K.H., Beker, H., Beusch, W., Burger, P., Campbell, M., Cantatore, E., Catanesi, M.G., Chesi, E., Darbo, G., D'Auria, S., DaVia, C., Di Bari, D., Di Liberto, S., Gys, T., Humpston, G., Jacholkowski, A., Jæger, J.J., Jakubek, J., Jarron, P., Klempt, W., Krummenacher, F., Knudson, K., Kubasta, J., Lassalle, J.C., Leitner, R., Lemeilleur, F., Lenti, V., Letheren, M., Lisowski, B., Lopez, L., Loukas, D., Luptak, M., Martinengo, P., Meddeler, G., Meddi, F., Middelkamp, P., Morando, M., Morettini, P., Munns, A., Musico, P., Pellegrini, F., Pengg, F., Pospisil, S., Quercigh, E., Ridky, J., Rossi, L., Safarik, K., Scharfetter, L., Segato, G., Simone, S., Smith, K., Snoeys, W., Sobczynski, C., Stastny, J., Vrba, V.

“…The Omega3/LHC1 pixel detector readout chip comprises a matrix of 128 × 16 readout cells of 50 μm × 500 μm and peripheral functions with 4 distinct modes of…”
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BSIM: Berkeley short-channel IGFET model for MOS transistors by Sheu, B.J., Scharfetter, D.L., Ko, P.-K., Jeng, M.-C.

“…The Berkeley short-channel IGFET model (BSIM), an accurate and computationally efficient MOS transistor model, and its associated characterization facility for…”
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Gallium arsenide pixel detectors by Bates, R, Campbell, M, Cantatore, E, D'Auria, S, DaVià, C, del Papa, C, Heijne, E.M, Middelkamp, P, O'Shea, V, Raine, C, Ropotar, I, Scharfetter, L, Smith, K, Snoeys, W

“…GaAs detectors can be fabricated with bidimensional single-sided electrode segmentation. They have been successfully bonded using flip-chip technology to the…”
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Uniformity of response of the LHC1 large area pixel detector system by Cantatore, E., Antinori, F., Becks, K.H., Beker, H., Buis, E.J., Burger, P., Campbell, M., Casagrande, L., Catanesi, M.G., Chesi, E., D'Auria, S., DaVià, C., Di Bari, D., Di Liberto, S., Gys, T., Heijne, E.H.M., Humpston, G., Jacholkowski, A., Jæger, J.J., Klempt, W., Kubasta, J., Leitner, R., Lenti, V., Luptak, M., Martinengo, P., Mazzoni, M.A., Meddeler, G., Meddi, F., Middelkamp, P., Mikulec, B., Morando, M., Pellegrini, F., Pospisil, S., Quercigh, E., Ridky, J., Ropotar, I., Safarik, K., Saladino, S., Scharfetter, L., Segato, G., Simone, S., Smith, K., Snoeys, W., Sobczynski, C., Tomasicchio, G., Vrba, V.

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Gallium arsenide pixel detectors for medical imaging by Da Via, C., Bates, R., Bertolucci, E., Bottigli, U., Campbell, M., Chesi, E., Conti, M., D'Auria, S., DelPapa, C., Fantacci, M.E., Grossi, G., Heijne, E., Mancini, E., Middelkamp, P., Raine, C., Russo, P., O'Shea, V., Scharfetter, L., Smith, K., Snoeys, W., Stefanini, A.

“…Gallium arsenide pixel detectors processed on a 200 μm Semi-Insulating (SI) Hitachi substrate were bump-bonded to the Omega3 electronics developed at CERN for…”
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The influence of a magnetic field on the performance of a binary pixel detector system by Scharfetter, L., Campbell, M., Cantatore, E., Heijne, E.H.M., Howard, A., Middelkamp, P., Snoeys, W.

“…In the framework of the RD19 collaboration, a binary silicon pixel detector system has been tested in a magnetic field between −2 and +2 T. The spatial…”
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Statistical analysis and optimization of delay line chains for pixel readout electronics by Cantatore, E., Campbell, M., Chesi, E., Corsi, F., De Venuto, D., Gramegna, G., Heijne, E.H.M., Marzocca, C., Middlekamp, P., Scharfetter, L., Simone, S., Snoeys, W.

“…An analytic model of the variance of the delay given by the delay line integrated in the Omega3/LHC1 pixel readout chip is proposed and verified with…”
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The LHC1 pixel detector studied in a 120 GeV/c pion test beam by Ropotar, I., Buis, E.-J., Antinori, F., Barberis, D., Becks, K.H., Beker, H., Burger, P., Campbell, M., Cantatore, E., Casagrande, L., Catanesi, M.G., Chesi, E., Corsi, F., D'Auria, S., Da Via, C., Danielyan, V., Darbo, G., Di Bari, D., Di Liberto, S., van Eijk, B., Elberich, J., Gagliardi, G., Geppert, R., Gowdy, S., Gössling, C., Grigoriev, E., Gys, T., Heijne, E.H.M., Howard, A.S., Humpston, G., Jakubek, J., Jarron, P., Leitner, R., Lenti, V., Letheren, M., Lisowski, B., Loukas, D., Ludwig, J., Martinengo, P., Mazzoni, A., Meddi, F., Middelkamp, P., Mikulec, B., Morando, M., Morettini, P., O'Shea, V., Pernigotti, E., Pospisil, S., Quercigh, E., Redaelli, N., Ridky, J., Rossi, L., Saladino, S., Santiard, J.C., Scharfetter, L., Segato, G., Shahoian, R., Simone, S., Smith, K.M., Snoeys, W., Sonderegger, P., Sopko, B., Stekl, I., Tomasek, L., Vardanyan, H., Vrba, V.

“…Hybrid assemblies of LHC1 read-out chips and 300 μm thick silicon pixel detectors have been tested with a 120 GeV/ c pion beam at the CERN SPS. The equivalent…”
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Use of silicon and GaAs pixel detectors for digital autoradiography by Amendolia, S.R., Beccherle, R., Bertolucci, E., Bisogni, M.G., Bottigli, U., Campbell, M., Chesi, E., Ciocci, M.A., Conti, M., Da Via, C., Del Guerra, A., D'Auria, S., Fantacci, M.E., Gambaccini, M., Grossi, G., Heijen, E., Mancini, E., Marchesini, R., Middelkamp, P., O'Shea, V., Randaccio, P., Romeo, N., Rosso, V., Russo, P., Scharfetter, L., Smith, K., Snoeys, W., Stefanini, A.

“…Solid state detectors made of Si (4.8/spl times/8 mm/sup 2/) and GaAs (6.4/spl times/8 mm/sup 2/) pixel matrices bump-bonded to the Omega2 and Omega3…”
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Space resolution of a silicon pixel detector as a function of the track angle by Morettini, P., Barberis, D., Bozzo, M., Caso, C., Dameri, M., Darbo, G., Gagliardi, G., Osculati, B., Pizzorno, C., Rossi, L., Sette, G., Vernocchi, F., Ridky, J., Sicho, P., Vrba, V., Leitner, R., Jakubek, J., Kubasta, J., Pospisil, S., Sopko, B., Campbell, M., Cantatore, E., Heijne, E., Middelkamp, P., Scharfetter, L., Snoeys, W.

“…We measured the spatial resolution of a 300 μm thick 75 × 500 μm silicon pixel detector as a function of the track angle using a 120 GeV pion beam. We observed…”
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Studies on a 300 k pixel detector telescope by Middelkamp, Peter, Antinori, F., Barberis, D., Becks, K.H., Beker, H., Beusch, W., Burger, P., Campbell, M., Cantatore, E., Catanesi, M.G., Chesi, E., Darbo, G., Auria, S.D., Davia, C., Di Bari, D., Di Liberto, S., Elia, D., Gys, T., Heijne, E.H.M., Helstrup, H., Jacholkowski, A., Jger, J.J., Jakubek, J., Jarron, P., Klempt, W., Krummenacher, F., Knudson, K., Kralik, I., Kubasta, J., Lasalle, J.C., Leitner, R., Lemeilleur, F., Lenti, V., Letheren, M., Lopez, L., Loukas, D., Luptak, M., Martinengo, P., Meddeler, G., Meddi, F., Morando, M., Munns, A., Pellegrini, F., Pengg, F., Pospisil, S., Quercigh, E., Ridky, J., Rossi, L., Safarik, K., Scharfetter, L., Segato, G., Simone, S., Smith, K., Snoeys, W., Vrba, V.

“…Four silicon pixel detector planes are combined to form a tracking telescope in the lead ion experiment WA97 at CERN with 290 304 sensitive elements each of 75…”
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General optimization and extraction of IC device model parameters by Doganis, K., Scharfetter, D.L.

“…VLSI circuit simulation necessitates specification of model parameters. For the device equations to predict the measured I-V characteristics, the extraction of…”
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Large-signal analysis of a silicon Read diode oscillator by Scharfetter, D.L., Gummel, H.K.

“…This paper presents theoretical calculations of the large-signal admittance and efficiency achievable in a silicon p-n-v-ns Read IMPATT diode. A simplified…”
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AVALANCHE SHOCK FRONTS IN p-n JUNCTIONS by Bartelink, D. J., Scharfetter, D. L.

“…A new transient mode of avalanche breakdown in p-n junctions is described. For sufficiently high current, a region of impact ionization of carriers advances as…”
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A multichip module, the basic building block for large area pixel detectors by Becks, K.-H., Heijne, E.H.M., Middelkamp, P., Scharfetter, L., Snoeys, W.

“…In order to build large array pixel detectors for future experiments in High Energy Physics e.g. for experiments at the Large Hadron Collider (LHC) at CERN,…”
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Device physics of TRAPATT oscillators by DeLoach, B.C., Scharfetter, D.L.

“…This paper utilizes a simplified physical model to describe TRAPATT (TRApped Plasma Avalanche Triggered Transit) operation. By yielding on computational…”
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Power-impedance-frequency limitations of IMPATT oscillators calculated from a scaling approximation by Scharfetter, D.L.

“…The obtainable CW power of silicon IMPATT oscillators, as a function of frequency, is calculated by scaling from reference results. The analysis differs from…”
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A transimpedance amplifier using a novel current mode feedback loop by Jarron, Pierre, Anghinolfi, Francis, Delagne, Eric, Dabrowski, Wladek, Scharfetter, Luitwin

“…We present a transimpedance amplifier stage based on a novel current mode feedback topology. This circuit employs exclusively NMOS and PMOS transistors and…”
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The Use of LSI Modules in Computer Structures: Trends and Limitations by Siewiorek, D.P., Thomas, D.E., Scharfetter, D.L.

“…Advances in LSI technology are beginning to outstrip architectural innovations and their implementation, calling for greater software productivity and…”
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High injection in epitaxial transistors by Poon, H.C., Gummel, H.K., Scharfetter, D.L.

“…An analysis of base widening and the current dependence of the cutoff frequency f T has been given previously [1]. The analysis is approximate and is based on…”
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