Search Results - "Schafft, Harry A."

Modeling and simulation of resistivity of nanometer scale copper by Yarimbiyik, A. Emre, Schafft, Harry A., Allen, Richard A., Zaghloul, Mona E., Blackburn, David L.

“…A highly versatile simulation program was developed and used to examine how the resistivity of thin metal films and lines is increased as their dimensions…”
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Experimental and simulation studies of resistivity in nanoscale copper films by Emre Yarimbiyik, A., Schafft, Harry A., Allen, Richard A., Vaudin, Mark D., Zaghloul, Mona E.

“…The effect of film thickness on the resistivity of thin, evaporated copper films (approximately 10–150 nm thick) was determined from sheet resistance, film…”
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Improved estimation of the resistivity of pure copper and electrical determination of thin copper film dimensions by Schuster, Constance E., Vangel, Mark G., Schafft, Harry A.

“…Improved values for the resistivity, ρ, of pure, bulk copper from 50 to 1200 K, and their confidence intervals, are developed by extending the analysis of…”
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Toward a building-in reliability approach by Schafft, Harry A., Erhart, David L., Gladden, Warren K.

“…Testing-in reliability, as with post-process and life testing, is shown to be no longer a viable response to the aggressive reliability and market-entry…”
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Early reliability assessment by using deep censoring by Schafft, Harry A., Head, Linda M., Gill, Jason, Sullivan, Timothy D.

“…A method is described for making direct characterizations of the early part of the intrinsic electromigration fail-time distribution of interconnects. The…”
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Thermal analysis of electromigration test structures by Schafft, H.A.

“…Analytical expressions are derived for estimating the temperature profile along a straight-line resistor test structure due to the joule heating generated by a…”
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Electrical characterization of integrated circuit metal line thickness by Mayo, Santos, Schafft, Harry A.

“…Resistance measurements of thin aluminum-silicon alloy lines, 10 and 30 μm wide, were made at various temperatures in the 9.2–295.5 K range. Deviations from…”
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Resistivity of nanometer-scale films and interconnects: model and simulation by Yarimbiyik, A.E., Schafft, H.A., Allen, R.A., Zaghloul, M.E., Blackburn, D.L.

“…We have developed a highly versatile simulation program for examining the impact of reduced dimensions on resistivity that goes beyond the work of others, e.g…”
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Second breakdown-A comprehensive review by Schafft, H.A.

“…This paper is a comprehensive review of the published literature dealing with the phenomenon of second breakdown in semiconductor devices and the problems it…”
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Reproducibility of electromigration measurements by Schafft, H.A., Staton, T.C., Mandel, J., Shott, J.D.

“…The reproducibility of median-time-to-failure (t 50 ) measurements was determined in an interlaboratory experiment in which 11 laboratories and a reference…”
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Failure Analysis of Wire Bonds by Schafft, Harry A.

“…Failure analysis of wire bonds has an important part to play in determining the causes of microelectronic device failure and ways for making and using devices…”
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VLSI Package Reliability Workshop Report by Zimmermant, Daniel D., Schafft, Harry A.

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Thermal conductivity measurements of thin-film silicon dioxide by Schafft, H.A., Suehle, J.S., Mirel, P.G.A.

“…Measurements of the thermal conductivity of micrometer-thick films of silicon dioxide are reported for the first time. Results show that the thermal…”
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Thermal Interactions Between Electromigration Test Structures by Schafft, H.A., Albers, J.

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Nondestructive measurement of solar cell sheet resistance using a laser scanner by Kowalski, P., Lankford, W.F., Schafft, H.A.

“…Experimental data have shown that a laser scanner can be used as a probe to make nondestructive measurements of solar cell sheet resistance width an accuracy…”
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Electromigration and the Current Density Dependence by Schafft, Harry A., Grant, Tammy C., Saxena, A. N., Kao, Chi-Yi

“…The empirical expression used to predict metallization resistance to electromigration failure involves the current density raised to the power n. A value for n…”
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Effect of Passivation and Passivation Defects on Electromigration Failure in Aluminum Metallization by Schafft, Harry A., Younkins, Curtis D., Grant, Tammy C., Kao, Chi-Yi, Saxena, A. N.

“…Metal line structures with intentional defects in the passivation, to simulate cracks or pin holes, were used in electromigration studies. Results show that…”
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