Search Results - "Schaeffler, F"

Efficiency limiting morphological factors of MDMO-PPV:PCBM plastic solar cells by Hoppe, H., Glatzel, T., Niggemann, M., Schwinger, W., Schaeffler, F., Hinsch, A., Lux-Steiner, M. Ch, Sariciftci, N.S.

“…Fundamental aspects of the influence of the nanomorphology in phase-separated conjugated polymer/fullerene bulk heterojunction blends are presented. A variety…”
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Delayed Plastic Relaxation on Patterned Si Substrates: Coherent SiGe Pyramids with Dominant { 111 } Facets by Zhong, Zhenyang, Schwinger, W., Schäffler, F., Bauer, G., Vastola, G., Montalenti, F., Miglio, L.

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Self-aligned fabrication of in-plane SiGe nanowires on rib-patterned Si (001) substrates by Chen, G., Springholz, G., Jantsch, W., Schäffler, F.

“…SiGe heteroepitaxy on Si (001) substrates induces three-dimensional Stranski-Krastanow growth. In this work, in-plane nanowires were produced during the growth…”
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Commensurate germanium light emitters in silicon-on-insulator photonic crystal slabs by Jannesari, R, Schatzl, M, Hackl, F, Glaser, M, Hingerl, K, Fromherz, T, Schäffler, F

“…We report on the fabrication and characterization of silicon-on-insulator (SOI) photonic crystal slabs (PCS) with commensurately embedded germanium quantum dot…”
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Initial stage of the two-dimensional to three-dimensional transition of a strained SiGe layer on a pit-patterned Si(001) template by Chen, Gang, Lichtenberger, H., Bauer, G., Jantsch, W., Schäffler, F.

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Nanoimprinted superlattice metallic photonic crystal as ultraselective solar absorber by Rinnerbauer, V., Lausecker, E., Schäffler, F., Reininger, P., Strasser, G., Geil, R. D., Joannopoulos, J. D., Soljačić, M., Celanovic, I.

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Realization of high-Q/V photonic crystal cavities defined by an effective Aubry-André-Harper bichromatic potential by Simbula, A., Schatzl, M., Zagaglia, L., Alpeggiani, F., Andreani, L. C., Schäffler, F., Fromherz, T., Galli, M., Gerace, D.

“…We report on the realization of high-Q/V photonic crystal cavities in thin silicon membranes, with resonances around 1.55 μm wavelength. The cavity designs are…”
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Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substrates by Schülli, T U, Vastola, G, Richard, M-I, Malachias, A, Renaud, G, Uhlík, F, Montalenti, F, Chen, G, Miglio, L, Schäffler, F, Bauer, G

“…We compare elastic relaxation and Si-Ge distribution in epitaxial islands grown on both pit-patterned and flat Si(001) substrates. Anomalous x-ray diffraction…”
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Strain engineering in Si via closely stacked, site-controlled SiGe islands by Zhang, J. J., Hrauda, N., Groiss, H., Rastelli, A., Stangl, J., Schäffler, F., Schmidt, O. G., Bauer, G.

“…The authors report on the fabrication and detailed structural characterization of ordered arrays of vertically stacked SiGe/Si(001) island pairs. By a proper…”
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UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays by Lausecker, E., Brehm, M., Grydlik, M., Hackl, F., Bergmair, I., Mühlberger, M., Fromherz, T., Schäffler, F., Bauer, G.

“…We use UV nanoimprint lithography for the pit-patterning of silicon substrates. Ordered silicon-germanium islands are grown inside these pits by molecular-beam…”
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Stranski-Krastanow growth of tensile strained Si islands on Ge (001) by Pachinger, D., Groiss, H., Lichtenberger, H., Stangl, J., Hesser, G., Schäffler, F.

“…Stranski-Krastanow island growth is demonstrated for tensile strained silicon epilayers on Ge (001) substrates over a wide range of growth temperatures. Small,…”
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Self-assembled Si0.80Ge0.20 nanoripples on Si(1 1 10) substrates by Chen, G., Wintersberger, E., Vastola, G., Groiss, H., Stangl, J., Jantsch, W., Schäffler, F.

“…Si 0.8 Ge 0.2 heteroepitaxy on vicinal Si(1 1 10) substrates leads to the formation of a nanoscale ripple morphology. Atomic force microscopy, and grazing…”
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Surfactant-mediated Si quantum dot formation on Ge(001) by Pachinger, D., Groiss, H., Teuchtmann, M., Hesser, G., Schäffler, F.

“…Stranski-Krastanow growth, modified by the presence of submonolayer coverages of carbon or antimony, is investigated for tensile strained silicon epilayers on…”
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One-dimensional to three-dimensional ripple-to-dome transition for SiGe on vicinal Si (1 1 10) by Sanduijav, B, Scopece, D, Matei, D, Chen, G, Schäffler, F, Miglio, L, Springholz, G

“…SiGe heteroepitaxy on vicinal Si (1 1 10) is studied as a model system for one-dimensional (1D) to three-dimensional growth mode transitions. By in situ…”
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Quantitative determination of Ge profiles across SiGe wetting layers on Si (001) by Brehm, M., Grydlik, M., Lichtenberger, H., Fromherz, T., Hrauda, N., Jantsch, W., Schäffler, F., Bauer, G.

“…The peak positions in photoluminescence spectra of Ge wetting layers (WL) deposited at 700 ° C were measured versus the Ge coverage with an extremely high…”
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Centrosymmetric PbTe∕CdTe quantum dots coherently embedded by epitaxial precipitation by Heiss, W., Groiss, H., Kaufmann, E., Hesser, G., Böberl, M., Springholz, G., Schäffler, F., Koike, K., Harada, H., Yano, M.

“…A concept for the fabrication of highly symmetric quantum dots that are coherently embedded in a single crystalline matrix is demonstrated. In this approach,…”
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Shaping site-controlled uniform arrays of SiGe/Si(001) islands by in situ annealing by Zhang, J. J., Rastelli, A., Groiss, H., Tersoff, J., Schäffler, F., Schmidt, O. G., Bauer, G.

“…We investigate the effect of in situ annealing on the shape, size, and chemical composition of ordered SiGe islands grown on pit-patterned Si(001) substrates…”
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Evolution and coarsening of Si-rich SiGe islands epitaxially grown at high temperatures on Si(001) by Brehm, M., Grydlik, M., Schäffler, F., Schmidt, O.G.

“…•Morphology evolution of epitaxial SiGe on Si(001) islands grown at high temperature.•We find that strong coalescence and coarsening effects dominate island…”
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Self-assembled Si and SiGe nanostructures: New growth concepts and structural analysis by Bauer, G., Schäffler, F.

“…Self‐organization during strained‐layer heteroepitaxy has been a field of intense research in the last few years. Especially the Si/SiGe heterosystem is…”
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Collective shape oscillations of SiGe islands on pit-patterned Si(001) substrates: a coherent-growth strategy enabled by self-regulated intermixing by Zhang, J J, Montalenti, F, Rastelli, A, Hrauda, N, Scopece, D, Groiss, H, Stangl, J, Pezzoli, F, Schäffler, F, Schmidt, O G, Miglio, L, Bauer, G

“…The shape of coherent SiGe islands epitaxially grown on pit-patterned Si(001) substrates displays very uniform collective oscillations with increasing Ge…”
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