Search Results - "Schacham, S. E."

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    Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors by Maimon, S., Finkman, E., Bahir, G., Schacham, S. E., Garcia, J. M., Petroff, P. M.

    Published in Applied physics letters (05-10-1998)
    “…Thermal generation rate in quantum dots (QD) can be significantly smaller than in quantum wells, rendering a much improved signal to noise ratio. QDs infrared…”
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    Journal Article
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    Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures by Vardi, A., Bahir, G., Guillot, F., Bougerol, C., Monroy, E., Schacham, S. E., Tchernycheva, M., Julien, F. H.

    Published in Applied physics letters (07-01-2008)
    “…A quantum cascade detector in the GaN/AlGaN/AlN material system was implemented. The design takes advantage of the large internal field existing in the…”
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    Journal Article
  3. 3

    Non-polar m -plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors by Pesach, A., Gross, E., Huang, C.-Y., Lin, Y.-D., Vardi, A., Schacham, S. E., Nakamura, S., Bahir, G.

    Published in Applied physics letters (08-07-2013)
    “…We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown…”
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    Journal Article
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    Effect of doping location on photoconductive spectrum of SiGe quantum dots by Schacham, S. E., Vardi, A., Le Thanh, V., Finkman, E.

    “…Comparative analysis of photoconductive (PC) spectra obtained from SiGe quantum dots grown on Si shows large dependence on the location of doping. The sample…”
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    Journal Article Conference Proceeding
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    Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron by Vardi, A., Sakr, S., Mangeney, J., Kandaswamy, P. K., Monroy, E., Tchernycheva, M., Schacham, S. E., Julien, F. H., Bahir, G.

    Published in Applied physics letters (14-11-2011)
    “…The ultra fast carrier dynamic in GaN/AlGaN quantum cascade detector was investigated using a time-resolved bias-lead monitoring technique. It is demonstrated…”
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    Journal Article
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    Photoconductivity of Ge/Si quantum dot photodetectors by Rappaport, N., Finkman, E., Boucaud, P., Sauvage, S., Brunhes, T., Le Thanh, V., Bouchier, D., Schacham, S.E.

    Published in Infrared physics & technology (2003)
    “…Various structures of self-assembled Ge/Si quantum dot infrared photodetectors were implemented and investigated. The electronic structure of the QDIPs was…”
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    Journal Article Conference Proceeding
  8. 8

    Photoconductive spectral analysis of InAs quantum dot under normal incidence by Schacham, S.E., Bahir, G., Finkman, E., Julien, F.H., Fossard, F., Brault, J., Gendry, M.

    Published in Infrared physics & technology (01-10-2003)
    “…InAs/InAlAs-on-InP quantum dots were implemented for infrared photodetection. The photoconductive spectra were measured as a function of polarization angle and…”
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    Journal Article Conference Proceeding
  9. 9

    Enhancement of Shubnikov-de Haas Oscillations by Carrier Modulation by Schacham, S. E., Haugland, E. J., Alterovitz, S. A.

    Published in Applied physics letters (03-08-1992)
    “…A novel technique for drastically enhancing the Shubnikov-de Haas (SdH) pattern of oscillatory magnetoresistance is presented. The technique is based on…”
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    Journal Article
  10. 10

    Room-Temperature Determination of Two-Dimensional Electron Gas Concentration and Mobility in Heterostructures by Schacham, S. E., Mena, R. A., Haugland, E. J., Alterovitz, S. A.

    Published in Applied physics letters (15-03-1993)
    “…A technique for determination of room-temperature two-dimensional electron gas (2DEG) concentration and mobility in heterostructures is presented. Using…”
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    Journal Article
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    Detection and measurement of steady-state evoked potentials in real-time using a lock-in amplifier. Technical note by Schacham, S E, Pratt, H

    Published in Journal of neurosurgery (01-06-1985)
    “…A system for recording evoked potentials, in which a lock-in amplifier replaces the averaging computer, is described. With this system, the set-up is much the…”
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    Journal Article
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    High sensitivity high Tc superconducting Josephson junction antenna for 200 GHz detection by Holdengreber, E., Moshe, A. G., Mizrahi, M., Khavkin, V., Schacham, S. E., Farber, E.

    “…A high sensitivity rounded bow-tie antenna was optimized based on electromagnetic simulations. The bicrystal Josephson junction detector with a thin layer of…”
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    Journal Article
  15. 15

    Miniature fiber-optic pattern-reversal stimulator for determination of the visual evoked potential threshold; comparison with Snellen acuity by RANIEL, Y, PRATT, H, NEUMANN, E, SCHACHAM, S. E

    “…In this report we recommend the estimation of visual acuity by detection of the visual evoked potential (VEP) threshold, defined by the smallest visual angle…”
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    Journal Article
  16. 16

    Real-time monitoring of visual evoked potentials by Zaaroor, M, Pratt, H, Feinsod, M, Schacham, S E

    Published in Israel journal of medical sciences (01-01-1993)
    “…Steady-state visual evoked potentials (SSVEP) were recorded in response to flashes from eyepatch-mounted light-emitting diodes during neurological surgery and…”
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    Journal Article
  17. 17

    Covered electrode HgCdTe photoconductor under high illumination levels by Fenigstein, A., Schacham, S. E., Finkman, E.

    “…The issue of thermal imaging systems exposed to large photon fluxes is of great practical importance, as it is encountered while observing a scenery which…”
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    Conference Proceeding Journal Article
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    Strain compensated InGaAs/InGaP quantum well infrared detector for midwavelength band detection by Maimon, S., Cohen, G. M., Finkman, E., Bahir, G., Ritter, D., Schacham, S. E.

    Published in Applied physics letters (10-08-1998)
    “…A high detectivity multiquantum well midinfrared photodetector is reported. It is based on a strain compensated InGaAs/InGaP on InP structure, using…”
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    Journal Article
  20. 20

    Quantum dot infrared photodetectors in new material systems by Finkman, E, Maimon, S, Immer, V, Bahir, G, Schacham, S.E, Gauthier-Lafaye, O, Herriot, S, Julien, F.H, Gendry, M, Brault, J

    “…Infrared detectors were implemented on InAs self-assembled quantum dots fabricated using Stranski–Krastanov growth mode on InAlAs matrix, lattice matched to…”
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    Journal Article