Search Results - "Schülli, T"

Bragg coherent diffraction imaging of single 20 nm Pt particles at the ID01‐EBS beamline of ESRF by Richard, M.-I., Labat, S., Dupraz, M., Li, N., Bellec, E., Boesecke, P., Djazouli, H., Eymery, J., Thomas, O., Schülli, T. U., Santala, M. K., Leake, S. J.

“…Electronic or catalytic properties can be modified at the nanoscale level. Engineering efficient and specific nanomaterials requires the ability to study their…”
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Strain-and temperature-induced dilatancy in ZrNi thin film metallic glasses with nanoscale structural heterogeneities by Daudin, R., Idrissi, H., Coulombier, M., Lhuissier, P., Béché, A., Verbeeck, J., Schryvers, D., Ghidelli, M., Raskin, J. P., Blandin, J-J., Schülli, T. U., Pardoen, T.

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Substrate-enhanced supercooling in AuSi eutectic droplets by Schülli, T. U, Daudin, R, Renaud, G, Vaysset, A, Geaymond, O, Pasturel, A

“…The phenomenon of supercooling in metals—that is, the preservation of a disordered, fluid phase in a metastable state well below the melting point—has led to…”
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Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substrates by Schülli, T U, Vastola, G, Richard, M-I, Malachias, A, Renaud, G, Uhlík, F, Montalenti, F, Chen, G, Miglio, L, Schäffler, F, Bauer, G

“…We compare elastic relaxation and Si-Ge distribution in epitaxial islands grown on both pit-patterned and flat Si(001) substrates. Anomalous x-ray diffraction…”
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Through-silicon via-induced strain distribution in silicon interposer by Vianne, B., Richard, M.-I., Escoubas, S., Labat, S., Schülli, T., Chahine, G., Fiori, V., Thomas, O.

“…Strain in silicon induced by Through-Silicon Via (TSV) integration is of particular interest in the frame of the integration of active devices in silicon…”
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Strain and lattice orientation distribution in SiN/Ge complementary metal–oxide–semiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy by Chahine, G. A., Zoellner, M. H., Richard, M.-I., Guha, S., Reich, C., Zaumseil, P., Capellini, G., Schroeder, T., Schülli, T. U.

“…This paper presents a study of the spatial distribution of strain and lattice orientation in CMOS-fabricated strained Ge microstripes using high resolution…”
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Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures by Evans, P. G., Savage, D. E., Prance, J. R., Simmons, C. B., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Schülli, T. U.

“…Si quantum wells on plastically relaxed SiGe substrates have nanometer variations in crystallographic parameters crucial to quantum‐information devices…”
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In situ three-dimensional reciprocal-space mapping during mechanical deformation by Cornelius, T. W., Davydok, A., Jacques, V. L. R., Grifone, R., Schülli, T., Richard, M.-I., Beutier, G., Verdier, M., Metzger, T. H., Pietsch, U., Thomas, O.

“…Mechanical deformation of a SiGe island epitaxically grown on Si(001) was studied by a specially adapted atomic force microscope and nanofocused X‐ray…”
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Strain release management in SiGe/Si films by substrate patterning by Mondiali, V., Bollani, M., Chrastina, D., Rubert, R., Chahine, G., Richard, M. I., Cecchi, S., Gagliano, L., Bonera, E., Schülli, T., Miglio, L.

“…The nucleation and the evolution of dislocations in SiGe/Si(001) films can be controlled and confined along stripes aligned along pits carved in the substrate,…”
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Direct evidence of strain transfer for InAs island growth on compliant Si substrates by Marçal, L. A. B., Richard, M.-I., Magalhães-Paniago, R., Cavallo, F., Lagally, M. G., Schmidt, O. G., Schülli, T. Ü., Deneke, Ch, Malachias, Angelo

“…Semiconductor heteroepitaxy on top of thin compliant layers has been explored as a path to make inorganic electronics mechanically flexible as well as to…”
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Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands by Richard, M.-I., Malachias, A., Schülli, T. U., Favre-Nicolin, V., Zhong, Z., Metzger, T. H., Renaud, G.

“…Compositional atomic ordering is a crucial issue in the epitaxial growth of nanoparticles and thin films. Here, we report on a method based on x-ray diffuse…”
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Three-dimensional diffraction mapping by tuning the X-ray energy by Cornelius, T. W., Carbone, D., Jacques, V. L. R., Schülli, T. U., Metzger, T. H.

“…Three‐dimensional reciprocal‐space maps of a single SiGe island around the Si(004) Bragg peak are recorded using an energy‐tuning technique with a microfocused…”
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Shape Changes of Supported Rh Nanoparticles During Oxidation and Reduction Cycles by Nolte, P, Stierle, A, Jin-Phillipp, N.Y, Kasper, N, Schulli, T.U, Dosch, H

“…The microscopic insight into how and why catalytically active nanoparticles change their shape during oxidation and reduction reactions is a pivotal challenge…”
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The epitaxial sexiphenyl (001) monolayer on TiO2(110) : A grazing incidence X-ray diffraction study by RESEL, R, OEHZELT, M, RAMSEY, M. G, LENGYEL, O, HABER, T, SCHÜLLI, T. U, THIERRY, A, HLAWACEK, G, TEICHERT, C, BERKEBILE, S, KOLLER, G

“…A para-sexiphenyl monolayer of near up-right standing molecules (nominal thickness of 30A) is investigated in-situ by X-ray diffraction using synchrotron…”
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Strain distribution in nitride quantum dot multilayers by Chamard, V., Schülli, T, Sztucki, M., Metzger, T. H., Sarigiannidou, E., Rouvière, J.-L., Tolan, M., Adelmann, C., Daudin, B.

“…Nitride quantum dots (QD’s) grown in the wurtzite phase present a strong vertical ordering along the (0001) direction when they are stacked in multilayers…”
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Multi‐wavelength Bragg coherent X‐ray diffraction imaging of Au particles by Lauraux, F., Cornelius, T. W., Labat, S., Richard, M.-I., Leake, S. J., Zhou, T., Kovalenko, O., Rabkin, E., Schülli, T. U., Thomas, O.

“…Multi‐wavelength (mw) Bragg coherent X‐ray diffraction imaging (BCDI) is demonstrated on a single Au particle. The multi‐wavelength Bragg diffraction patterns…”
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Application of a single-reflection collimating multilayer optic for X-ray diffraction experiments employing parallel-beam geometry by Wohlschlögel, M., Schülli, T. U., Lantz, B., Welzel, U.

“…Instrumental aberrations of a parallel‐beam diffractometer equipped with a rotating anode X‐ray source, a single‐reflection collimating multilayer optic and a…”
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Growth mode, strain state and shape of Ge islands during their growth at different temperatures: a combined in situ GISAXS and GIXD study by Richard, M.-I., Schülli, T.-U., Wintersberger, E., Renaud, G., Bauer, G.

“…The growth mode, strain state and shape of Ge islands were analyzed in situ, during their growth on Si(001), by combining Grazing Incidence Small Angle X-ray…”
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Energy and Environmental Science at ESRF by Longo, A., Sahle, Ch. J., Glatzel, P., Giacobbe, C., Rack, A., Mathon, O., Lomachenko, K. A., Segura-Ruiz, J., Villanova, J., Castillo-Michel, H., Vanpeene, V., Tucoulou, R., Schülli, T. U., Martens, I., Drnec, J.

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X-ray zoom lens allows for energy scans in X-ray microscopy by Kornemann, E, Zhou, T, Márkus, O, Opolka, A, Schülli, T U, Mohr, J, Last, A

“…We introduce a new design and development of a compound refractive X-ray zoom lens for energy scans in X-ray microscopy. Energy scans are, in principle,…”
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