Search Results - "Schüßler, A."

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    Anchoring the species Rhizophagus intraradices (formerly Glomus intraradices ) by Walker, C, Schüßler, A, Vincent, B, Cranenbrouck, S, Declerck, S

    Published in Fungal systematics and evolution (01-12-2021)
    “…The nomenclatural type material of (basionym ) was originally described from a trap pot culture established with root fragments, subcultures of which later…”
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    Glomus, the Largest Genus of the Arbuscular Mycorrhizal Fungi (Glomales), Is Nonmonophyletic by Schwarzott, Daniel, Walker, Chris, Schüßler, Arthur

    Published in Molecular phylogenetics and evolution (01-11-2001)
    “…Arbuscular mycorrhizal (AM) fungi form a widespread and ecologically important symbiosis with plants in the land ecosystem. The phylogeny of the largest…”
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    A simple and reliable method for SSU rRNA gene DNA extraction, amplification, and cloning from single AM fungal spores by Schwarzott, Daniel, Schüßler, A.

    Published in Mycorrhiza (01-01-2001)
    “…We describe a method that allows quick and easy PCR amplification and cloning of nearly complete SSU rRNA genes from arbuscular mycorrhizal fungi. The…”
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    Geosiphon pyriforme, a fungus forming endocytobiosis with Nostoc (Cyanobacteria), is an ancestral member of the Glomales: evidence by SSU rRNA analysis by Gehrig, H. (Technischen Hochschule Darmstadt, Darmstadt, Germany.), Schussler, A, Kluge, M

    Published in Journal of molecular evolution (01-07-1996)
    “…Geosiphon pyriforme inhabiting the surface of humid soils represents the only known example of endocytobiosis between a fungus (Zygomycotina; macrosymbiont)…”
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    Forecasting the Equity Premium: Mind the News! by Adämmer, Philipp, Schüssler, Rainer A

    Published in Review of Finance (01-11-2020)
    “…Abstract We introduce a novel strategy to predict monthly equity premia that is based on extracted news from more than 700,000 newspaper articles, which were…”
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    In situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy by Gschrey, M., Gericke, F., Schüßler, A., Schmidt, R., Schulze, J.-H., Heindel, T., Rodt, S., Strittmatter, A., Reitzenstein, S.

    Published in Applied physics letters (24-06-2013)
    “…We report on the deterministic fabrication of sub-μm mesa-structures containing single quantum dots (QDs) by in situ electron-beam lithography. The fabrication…”
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    Comprehensive bayesian modeling of tidal circularization in open cluster binaries part I: M 35, NGC 6819, NGC 188 by Penev, Kaloyan M, Schussler, Joshua A

    “…Abstract Tidal friction has long been recognized to circularize the orbits of binary stars over time. In this study, we use the observed distribution of…”
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    Measuring tidal dissipation in giant planets from tidal circularization by Mahmud, Mohammad M, Penev, Kaloyan M, Schussler, Joshua A

    “…ABSTRACT In this project, we determined the constraints on the modified tidal quality factor, $Q_{\rm pl}^{\prime }$, of gas-giant planets orbiting close to…”
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    Analysis of partial Glomales SSU rRNA gene sequences: implications for primer design and phylogeny by SCHÜßLER, Arthur, GEHRIG, Hans, SCHWARZOTT, Daniel, WALKER, Chris

    Published in Mycological research (01-01-2001)
    “…Arbuscular mycorrhizal (AM) fungi, classified in the order Glomales, cannot easily be identified by hyphal morphology. PCR can be used successfully to identify…”
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    On the response-time behaviour of laser micromachined NiTi shape memory actuators by Rohde, M., Schu¨ssler, A.

    Published in Sensors and actuators. A. Physical. (01-06-1997)
    “…The response-time behavior of NiTi shape memory actuators fabricated by laser micromachining has been studied with experimental methods. A numerical model to…”
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    Epitaxial growth of Fe on Fe/GaAs(001) reacted layers by Lallaizon, C., Lépine, B., Ababou, S., Schussler, A., Quémerais, A., Guivarc'h, A., Jézéquel, G., Députier, S., Guérin, R.

    Published in Applied surface science (01-01-1998)
    “…By using in situ techniques (RHEED, XPS and XPD), we show that the UHV annealing treatment of an epitaxial Fe/GaAs(001) structure in the 400–450°C temperature…”
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